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| MSC81350M RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS .REFRACTORY/ .RUGGEDI .I .LOW .METAL/ .P G OLD METALLIZATION Z ED VSWR 20:1 N TERNAL INPUT/OUTPUT MATCHING THERMAL RESISTANCE C ERAMIC HERMETIC PACKAGE OUT = 350 W MIN. WITH 7.0 dB GAIN .400 x .400 2NLFL (S042) hermetically sealed ORDER CODE MSC81350M BRANDING 81350M PIN CONNECTION DESCRIPTION The MSC81350M device is a high power pulsed transistor specifically designed for IFF avionics applications. This device is capable of withstanding a minimum 20:1 load VSWR at any phase angle under full rated conditions. Low RF thermal resistance and semi automatic wire bonding techniques ensure high reliability and product consistency. The MSC81350M is housed in the unique AMPACTM package with internal input/output matching structures. ABSOLUTE MAXIMUM RATINGS (T case = 25 C) Symbol Parameter Value Unit 1. Collector 2. Base 3. Emitter 4. Base PDISS IC VCC TJ T STG Power Dissipation* Device Current* (TC 55C) 720 19.8 55 250 - 65 to +200 W A V C C Collector-Supply Voltage* Junction Temperature (Pulsed RF Operation) Storage Temperature THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* 0.20 C/W *Applies only to rated RF amplifier operation October 1992 1/5 MSC81350M ELECTRICAL SPECIFICATIONS (T case = 25 C) STATIC Symbol Test Conditions Value Min. Typ. Max. Unit BVCBO BVEBO BVCER ICES hFE DYNAMIC Symbol IC = 10mA IE = 1mA IC = 25mA VCE = 50V VCE = 5V IE = 0mA IC = 0mA RBE = 10 IC = 1A 65 3.5 65 -- 15 -- -- -- -- -- -- -- -- 25 120 V V V mA -- Test Conditions Value Min. Typ. Max. Unit POUT c GP Note: f = 1090 MHz f = 1090 MHz f = 1090 MHz = = 10Sec 1% PIN = 70 W PIN = 70 W PIN = 70 W VCC = 50 V VCC = 50 V VCC = 50 V 350 40 7.0 360 44 7.1 -- -- -- W % dB Pulse W idth Duty Cycle 2/5 MSC81350M IMPEDANCE DATA TYPICAL INPUT IMPEDANCE ZIN PIN = 70 W VCC = 50 V Normalized to 50 ohms FREQ. L = 1025 MHz M = 1090 MHz H = 1150 MHz ZIN () 5.0 + j 5.0 7.0 + j 2.5 3.6 + j 2.5 ZCL () 7.0 - j 2.5 7.5 - j 2.8 6.8 - j 2.7 TYPICAL COLLECTOR LOAD IMPEDANCE ZCL PIN = 70 W VCC = 50 V Normalized to 50 ohms 3/5 MSC81350M TEST CIRCUIT Ref.: Dwg. No. C127471 All dimensions are in inches. PACKAGE MECHANICAL DATA 4/5 MSC81350M Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 5/5 |
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