View UPA1731_290513.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
PA1731
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
The PA1731 is P-Channel MOS Field Effect Transistor designed for power management applications of notebook computers and Li-ion battery protection circuit.
8
PACKAGE DRAWING (Unit : mm)
5 1,2,3 ; Source ; Gate 4 5,6,7,8 ; Drain
FEATURES
* Low on-resistance
1.44
RDS(on)1 = 10.3 m TYP. (VGS = -10 V, ID = -5.0 A)
1.8 MAX.
1 5.37 MAX.
4
6.0 0.3 4.4
+0.10 -0.05
0.8
RDS(on)2 = 14.6 m TYP. (VGS = -4.5 V, ID = -5.0 A)
0.05 MIN.
* *
* Low Ciss : Ciss =2600 pF TYP. * Built-in G-S protection diode * Small and surface mount package (Power SOP8)
0.15
RDS(on)3 = 16.5 m TYP. (VGS = -4.0 V, ID = -5.0 A)
0.5 0.2 0.10
1.27 0.78 MAX. 0.40
+0.10 -0.05
0.12 M
ORDERING INFORMATION
PART NUMBER PACKAGE Power SOP8
PA1731G
ABSOLUTE MAXIMUM RATINGS (TA = 25C, All terminals are connected.)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (pulse)
Note1 Note2
EQUIVALENT CIRCUIT
Drain
VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg
-30
# 20 # 10 # 40
V V A A W C C
Gate Gate Protection Diode
Body Diode
Total Power Dissipation (TA = 25C) Channel Temperature Storage Temperature
2.0 150 -55 to + 150
2
Source
Notes 1. PW 10 s, Duty Cycle 1 % 2. Mounted on ceramic substrate of 1200 mm x 2.2 mm Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. G14285EJ1V0DS00 (1st edition) Date Published October 1999 NS CP(K) Printed in Japan
The mark * shows major revised points.
(c)
1999
PA1731
* ELECTRICAL CHARACTERISTICS (TA = 25 C, All terminals are connected.)
CHARACTERISTICS Drain to Source On-state Resistance SYMBOL RDS(on)1 RDS(on)2 RDS(on)3 Gate to Source Cut-off Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS(off) | yfs | IDSS IGSS Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr TEST CONDITIONS VGS = -10 V, ID = -5.0 A VGS = -4.5 V, ID = -5.0 A VGS = -4.0 V, ID = -5.0 A VDS = -10 V, ID = -1 mA VDS = -10 V, ID = -5.0 A VDS = 30 V, VGS = 0 V VGS = # 20 V, VDS = 0 V VDS = -10 V VGS = 0 V f = 1 MHz ID = -5.0 A VGS(on) = -10 V VDD = -15 V RG = 10 ID = -10 A VDD = -24 V VGS = -10 V IF = 10 A, VGS = 0 V IF = 10 A, VGS = 0 V di/dt = 100 A/ s 2600 810 350 32 185 155 110 46 6.5 12 0.80 50 46 MIN. TYP. 10.3 14.6 16.5 MAX. 13.0 19.5 22.0 UNIT m m m V S
-1.0
8.0
-1.6
18.0
-2.5
-1
# 10
A A
pF pF pF ns ns ns ns nC nC nC V ns nC
TEST CIRCUIT 1 SWITCHING TIME
D.U.T. RL
VGS VGS
Wave Form
TEST CIRCUIT 2 GATE CHARGE
D.U.T. IG = 2 mA
10 % 90 % 90 % ID VGS (on) 90 %
RL VDD
PG.
RG RG = 10
0 ID
VDD
PG.
50
VGS 0 = 1 s Duty Cycle 1 %
ID
Wave Form
0
10 % td (on) ton tr td (off) toff
10 % tf
2
Data Sheet G14285EJ1V0DS00
PA1731
* TYPICAL CHARACTERISTICS (TA = 25 C)
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 2.8
dT - Percentage of Rated Power - %
PT - Total Power Dissipation - W
100 80 60 40 20
2.4 2.0 1.6 1.2 0.8 0.4 0 20 40 60
Mounted on ceramic substrate of 1200 mm2 x 2.2 mm
0
20
40
60
80
100 120 140 160
80
100 120 140 160
TA - Ambient Temperature - C
TA - Ambient Temperature - C
-1000 -100 -10 -1 -0.1
FORWARD BIAS SAFE OPERATING AREA
Remark Mounted on ceramic substrate of
ID(pulse)=40 A
ID - Drain Current - A
1m
ID(DC)=10 A
100 s
1200 mm x 2.2 mm
2
10
10
we rD iss ipa
s
ms
s
Po
0m
tion
Lim
ited
TA = 25 C Single Pulse -0.01 -0.1 -1
-10
-100
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000
rth(t) - Transient Thermal Resistance - C/W
100
Rth(ch-A) = 62.5C
10
1
0.1
0.01
Mounted on ceramic substrate of 1200 mm2 x 2.2 mm Single Pulse
0.001
10
100
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
Data Sheet G14285EJ1V0DS00
3
PA1731
FORWARD TRANSFER CHARACTERISTICS -100 Pulsed -10 TA = -50C -25C 25C 75C 125C 150C
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE -50 -40 -30 -20 -10 VGS = -10 V
Pulsed
-4.5 V -4.0 V
-1 -0.1 -0.01
-0.001 -0.0001 0 -1.0 -2.0 VDS = -10 V -3.0 -4.0
ID - Drain Current - A
ID - Drain Current - A
0
-0.2
-0.4
-0.6
-0.8
VGS - Gate to Source Voltage - V
VDS - Drain to Source Voltage - V
|yfs| - Forward Transfer Admittance - S
100 TA = -50C -25C 25C 75C 125C 150C
10
RDS(on) - Drain to Source On-State Resistance - m
FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 30 Pulsed
20 ID = -10 A -5.0 A 10
1
VDS = -10 V Pulsed
-0.1
-1
-10
-100
0
-5
-10
-15
ID- Drain Current - A
VGS - Gate to Source Voltage - V
RDS(on) - Drain to Source On-state Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 20 Pulsed 15 VGS = -4.0 V -4.5 V -10 V
GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE
VGS(off) - Gate to Source Cut-off Voltage - V
-2.0
VDS = -10 V ID = -1 mA
-1.5
10
-1.0
5
-0.5
0 -0.1
-1
-10
-100
-100
0
-50
0
50
100
150
ID - Drain Current - A
Tch - Channel Temperature - C
4
Data Sheet G14285EJ1V0DS00
PA1731
RDS(on) - Drain to Source On-state Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 25 Pulsed 20 15 10 5 ID = -5.0 A 0 -50 0 50 100 150 VGS = -4.0 V -4.5 V -10 V
SOURCE TO DRAIN DIODE FORWARD VOLTAGE 100
IF - Diode Forward Current - A
10
VGS = -4.5 V
0V
1
0.1
0.01
0.001 0 0.5 1.0 1.5 VF - Source to Drain Voltage - V
Tch - Channel Temperature - C
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE -1 0000
td(on), tr, td(off), tf - Switching Time - ns
1 000
SWITCHING CHARACTERISTICS tr td(off) 100 tf td(on)
Ciss, Coss, Crss - Capacitance - pF
Ciss -1 000 Coss Crss -100
10 VDS = -15 V VGS = -10 V RG = 10 -10 -100
-10 -0.1
VGS = 0 V f = 1 MHz -1 -10 -100
1 -0.1
-1
VDS - Drain to Source Voltage - V
ID - Drain Current - A
REVERSE RECOVERY TIME vs. DIODE CURRENT 10000
VDS - Drain to Source Voltage - V
trr - Reverse Recovery Time - ns
1000
-30 VDS = -24 V -15 V -6 V VGS
-10 -8 -6 -4 -2
100
-20
10
-10 VDS 0 10 20 30 40
1 -0.1
-1
-10
-100
50
0
IF - Diode Current - A
QG - Gate Charge - nC
VGS - Gate to Source Voltage - V
di/dt = 100 A/ s VGS = 0 V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS -40 -14 ID = -10 A -12
Data Sheet G14285EJ1V0DS00
5
PA1731
[MEMO]
6
Data Sheet G14285EJ1V0DS00
PA1731
[MEMO]
Data Sheet G14285EJ1V0DS00
7
PA1731
* The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. * No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. * NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. * Descriptions of circuits, software, and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software, and information in the design of the customer's equipment shall be done under the full responsibility of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third parties arising from the use of these circuits, software, and information. * While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. * NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance.
M7 98. 8

▲Up To Search▲

Price & Availability of UPA1731

	To Download UPA1731 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .