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2SC3927
Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) sAbsolute maximum ratings (Ta=25C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC3927 900 550 7 10(Pulse15) 5 120(Tc=25C) 150 -55 to +150 Unit V V V A A W C C
Application : Switching Regulator and General Purpose
(Ta=25C) 2SC3927 100max 100max 550min 10 to 28 0.5max 1.2max 6typ 105typ V V MHz pF
20.0min 4.0max 3 1.05 +0.2 -0.1 5.450.1 B C E 5.450.1 0.65 +0.2 -0.1 1.4
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=800V VEB=7V IC=10mA VCE=4V, IC=5A IC=5A, IB=1A IC=5A, IB=1A VCE=12V, IE=-1A VCB=10V, f=1MHz
External Dimensions MT-100(TO3P)
5.00.2 15.60.4 9.6 2.0 1.8 4.80.2 2.00.1
Unit
A A
19.90.3
V
4.0
a b
o3.20.1
2
sTypical Switching Characteristics (Common Emitter)
VCC (V) 250 RL () 50 IC (A) 5 VBB1 (V) 10 VBB2 (V) -5 IB1 (A) 0.75 IB2 (A) -1.5 ton (s) 1max tstg (s) 5max tf (s) 0.5max
Weight : Approx 6.0g a. Type No. b. Lot No.
IC - VCE Characteristics (Typical)
10
1. 2A
VCE(sat),VBE(sat) - IC Temperature Characteristics (Typical)
Collector-Emitter Saturation Voltage V CE(s a t)( V ) Base-Emitter Saturation Voltage V B E(s a t)( V ) (IC/I B= 5)
I C - VBE Temperature Characteristics (Typical)
10 (VCE=4V)
1A
80 0m A
60 0m A
Collector Current I C( A)
-55C (C
25C (C
ase Temp)
p)
6
400m A
ase Tem
Collector Current I C (A)
8
1
V B E( sat) 8
6
p)
mp
4
4
eT
200mA
125C
(Case 25C
Cas
(C a
I B =100mA
125
C (
12
25
2
C 5
2
C
VCE(sat) 0 0.02 0.05 0.1 0.5 1
5 -5
0
0
1
2
3
4
5
10
0
0
0.2
0.4
0.6
0.8
-55C
C
(Case
se
Te
Temp)
)
em
(Case
Temp
T
emp)
)
1.0
1.2
Collector-Emitter Voltage V C E( V)
Collector Current I C( A)
Base-Emittor Voltage V B E( V)
hFE - IC Characteristics (Typical)
(VCE=4V) 50 10
t on *t st g * tf - IC Characteristics (Typical)
j-a(C/W)
2
j-a - t Characteristics
ton*t s t g*t f( s)
125 C
DC C urrent G ain h FE
Transient Thermal Resistance
25 C
5 VCC 250V IC:I B 1: -I B2= 10:1.5:3
t s tg
1
-5 5 C
Switching Ti me
1 0.5 t on tf 0.1 0.2 0.5 1 Collector Current I C( A) 5 10
0.5
10
5 0.02
0.05
0.1
0.5
1
5
10
0.1
1
10 Time t(ms)
100
1000
Collector Current I C( A)
Safe Operating Area (Single Pulse)
20 10 5 Co lle ctor Cu rre nt I C( A)
DC
10
Reverse Bias Safe Operating Area
20 120
P c - T a Derating
s
M aximu m Power Dissipat io n P C( W)
ms
1m
10
10
0 s
5 Co lle ctor Cu rre nt I C( A)
100
W ith In fin ite
1 0.5
1 0.5
he at si nk
50
0.1 0.05 0.02 10
Without Heatsink Natural Cooling
0.1 0.05 0.02 50
Without Heatsink Natural Cooling L=3mH IB2=-1.0A Duty:less than 1% 100 500 1000
50
100
500 600
3.5 0
Without Heatsink 0 25 50 75 100 125 150
Collector-Emitter Voltage V C E( V)
Collector-Emitter Voltage V C E( V)
Ambient Temperature Ta(C)
82

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