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Transistor
2SD1205, 2SD1205A
Silicon NPN epitaxial planar type darlington
For low-frequency amplification
6.90.1 2.50.1 (1.0) (1.5)
Unit: mm
3.50.1
R 0.9 R 0.7
2.00.2
q
1.00.1
(0.85)
2.40.2
q
0.450.05
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SD1205 2SD1205A 2SD1205 VCEO VEBO ICP IC PC Tj Tstg Symbol VCBO
(Ta=25C)
Ratings 30 60 25 50 5 750 500 400 150 -55 ~ +150 Unit V
1:Base 2:Collector 3:Emitter
3
(2.5)
2
(2.5)
1
emitter voltage 2SD1205A Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
V V mA mA mW C C
1.250.05
0.550.1
M-A1 Package
Internal Connection
C B
200
E
s Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current Collector to base voltage Collector to emitter voltage 2SD1205 2SD1205A 2SD1205 2SD1205A
(Ta=25C)
Symbol ICBO IEBO VCBO VCEO VEBO hFE*1 VCE(sat) VBE(sat) fT Conditions VCB = 25V, IE = 0 VEB = 4V, IC = 0 IC = 100A, IE = 0 IC = 1mA, IB = 0 IE = 100A, IC = 0 VCE = 10V, IC = 500mA*2 IC = 500mA, IB = 0.5mA*2 IC = 500mA, IB = 0.5mA*2 VCB = 10V, IE = -50mA, f = 200MHz 150
*2
min
typ
max 100 100
30 60 25 50 5 4000 20000 2.5 3
4.10.2
4.50.1
q
Forward current transfer ratio hFE is designed high, which is appropriate to the driver circuit of motors and printer bammer: hFE = 4000 to 2000. A shunt resistor is omitted from the driver. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board.
(1.0)
s Features
(0.4)
(1.5)
Unit nA nA V
V V
Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency
*1h
V V MHz
Pulse measurement
FE
Rank classification
Q R 4000 ~ 10000 8000 ~ 20000
Rank hFE
593
Transistor
PC -- Ta
Collector to emitter saturation voltage VCE(sat) (V)
500 100 30 10 3 25C 1 -25C 0.3 0.1 0.03 0.01 0.01 0.03 Ta=75C
2SD1205, 2SD1205A
VCE(sat) -- IC
Base to emitter saturation voltage VBE(sat) (V)
IC/IB=1000 100 30 10 3 Ta=-25C 1 0.3 0.1 0.03 0.01 0.01 0.03 75C 25C
VBE(sat) -- IC
IC/IB=1000
Collector power dissipation PC (mW)
400
300
200
100
0 0 20 40 60 80 100 120 140 160
0.1
0.3
1
3
10
0.1
0.3
1
3
10
Ambient temperature Ta (C)
Collector current IC (A)
Collector current IC (A)
hFE -- IC
105
Cob -- VCB
Collector output capacitance Cob (pF)
VCE=10V 8 7 6 5 4 3 2 1 0 IE=0 f=1MHz Ta=25C
Forward current transfer ratio hFE
Ta=75C 104 25C
-25C 103
102
10 0.01 0.03
0.1
0.3
1
3
10
1
3
10
30
100
Collector current IC (A)
Collector to base voltage VCB (V)
594
Request for your special attention and precautions in using the technical information and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.
2002 JUL

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