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| 2SK2212 Silicon N Channel MOS FET Application High speed power switching TO-220FM Features * * * * * Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC - DC converter,Motor Control 2 12 1 3 1. Gate 2. Drain 3. Source 3 Table 1 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse)* IDR Pch** Tch Tstg Ratings 200 20 10 40 10 30 150 -55 to +150 Unit V V A A A W C C -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- * PW 10 s, duty cycle 1 % ** Value at Tc = 25 C 2SK2212 Table 2 Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr Min 200 Typ -- Max -- Unit V Test conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS =160 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 5 A VGS = 10 V * ID = 5 A VDS = 10 V * VDS = 10 V VGS = 0 f = 1 MHz ID = 5 A VGS = 10 V RL = 6 -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- 20 -- -- V -------------------------------------------------------------------------------------- -- -- 2.0 -- -- -- -- 0.24 10 250 4.0 0.3 A A V -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- 3.5 6 -- S -------------------------------------------------------------------------------------- Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time * Pulse Test -- -- -- -- -- -- -- -- 1000 360 65 18 80 65 50 1.1 -- -- -- -- -- -- -- -- pF pF pF ns ns ns ns V IF = 10 A, VGS = 0 IF = 10 A, VGS = 0, diF / dt = 100 A / s ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -- 190 -- ns -------------------------------------------------------------------------------------- 2SK2212 Power vs. Temperature Derating 40 Pch (W) I D (A) 50 20 10 Maximum Safe Operation Area 10 s 0 s 10 PW D C pe O 30 = 1 10 n s m 5 2 1 0.5 0.2 0.1 0.05 m s Channel Dissipation Drain Current (1 20 Operation in this area is limited by R DS(on) tio ra c (T sh ot ) = 25 C ) 10 Ta = 25 C 2 5 10 20 50 100 200 500 0 50 100 150 Tc (C) 200 0.5 1 Case Temperature Drain to Source Voltage V DS (V) Typical Output Characteristics 20 10 V I D (A) (A) 16 6V 10 Typical Transfer Characteristics V DS = 10 V Pulse Test 8 12 ID Drain Current Drain Current 5.5 V 5V 4.5 V VGS = 3.5 V 4V 16 20 V DS (V) 6 Tc = 75C 4 25C -25C 8 4 2 0 4 8 12 Drain to Source Voltage 0 2 4 6 Gate to Source Voltage 8 10 V GS (V) 2SK2212 Drain to Source Saturation Voltage vs. Gate to Source Voltage V DS(on) (V) 5 Pulse Test Drain to Source On State Resistance R DS(on) ( ) Static Drain to Source on State Resistance vs. Drain Current 10 Pulse Test 5 4 2 1 Drain to Source Voltage 3 I D = 10 A 2 5A 1 2A 0 12 4 8 Gate to Source Voltage 16 20 V GS (V) 0.5 VGS = 10 V 15 V 1 2 5 10 20 Drain Current I D (A) 50 0.2 0.1 0.5 Static Drain to Source on State Resistance R DS(on) ( ) Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance vs. Temperature 1.0 V GS = 10 V Pulse Test 0.8 10 5 Forward Transfer Admittance vs. Drain Current Tc = -25 C 25 C 75 C 2 1 0.5 V DS = 10 V Pulse Test 0.3 1 3 10 30 100 0.6 I D = 10 A 0.4 2A 0.2 0 -40 5A 0.2 0.1 0.1 0 40 80 120 160 Case Temperature Tc (C) Drain Current I D (A) 2SK2212 Body-Drain Diode Reverse Recovery Time 500 Reverse Recovery Time trr (ns) Capacitance C (pF) 200 100 50 Typical Capacitance vs. Drain to Source Voltage 5000 1000 Ciss Coss 100 20 10 5 0.2 di / dt = 100 A / s V GS = 0, Ta = 25 C 0.5 1 2 5 10 20 Reverse Drain Current I DR (A) 10 5 VGS = 0 f = 1 MHz 0 10 20 Crss 30 40 50 Drain to Source Voltage V DS (V) Dynamic Input Characteristics V DS (V) V GS (V) 500 20 500 Switching Characteristics Drain to Source Voltage 300 12 I D = 15 A VDS V DD = 150 V 100 V 50 V 8 16 24 32 Gate Charge Qg (nc) Gate to Source Voltage V DD = 50 V 100 V 150 V VGS Switching Time t (ns) 400 16 200 100 50 tr 20 10 5 0.2 t d(off) tf t d(on) 200 8 100 4 0 40 V GS = 10 V, V DD = 30 V PW = 5 s, duty < 1 % 0.5 1 2 Drain Current 5 10 I D (A) 20 0 2SK2212 Reverse Drain Current vs. Souece to Drain Voltage 20 Reverse Drain Current I DR (A) Pulse Test 16 12 V GS = 0, -5 V 5V 8 10 V 4 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage V SD (V) Normalized Transient Thermal Impedance vs. Pulse Width 3 Normalized Transient Thermal Impedance s (t) Tc = 25C 1 D=1 0.5 0.3 0.2 0.1 0.1 0.05 0.02 1 0.0 ch - c(t) = s (t) * ch - c ch - c = 4.17 C/W, Tc = 25 C PDM 0.03 D= PW T PW T 0.01 10 1s t ho pu lse 100 1m 10 m Pulse Width 100 m PW (S) 1 10 2SK2212 Switching Time Test Circuit Vin Monitor D.U.T. RL Vin Vin 10 V 50 V DD = 30 V Vout 10% 10% Vout Monitor Waveform 90% 10% 90% td(off) tf 90% td(on) tr |
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