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PD - 96966A
PDP MOSFET
Features l Advanced process technology l Key parameters optimized for PDP Sustain & Energy Recovery applications l Low EPULSE rating to reduce the power dissipation in Sustain & ER applications l Low QG for fast response l High repetitive peak current capability for reliable operation l Short fall & rise times for fast switching l175C operating junction temperature for improved ruggedness l Repetitive avalanche capability for robustness and reliability
IRFP4242PBF
Key Parameters
300 360 49 93 175
D
D
VDS min VDS (Avalanche) typ. RDS(ON) typ. @ 10V IRP max @ TC= 100C TJ max
V V m: A C
G S
G
D
S
TO-247AC
D S
G
Description This HEXFET(R) Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 175C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.
G a te
D ra in
S o u rc e
Absolute Maximum Ratings
Parameter
VGS ID @ TC = 25C ID @ TC = 100C IDM IRP @ TC = 100C PD @TC = 25C PD @TC = 100C TJ TSTG Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Soldering Temperature for 10 seconds Mounting Torque, 6-32 or M3 Screw 300 10lbxin (1.1Nxm) N
Max.
30 46 33 190 93 430 210 2.9 -40 to + 175
Units
V A
c
Repetitive Peak Current
g
W W/C C
Thermal Resistance
RJC Junction-to-Case
f
Parameter
Typ.
---
Max.
0.35
Units
C/W
Notes through are on page 8
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IRFP4242PBF
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter
BVDSS VDSS/TJ RDS(on) VGS(th) VGS(th)/TJ IDSS IGSS gfs Qg Qgd tst EPULSE Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Gate-to-Drain Charge Shoot Through Blocking Time Energy per Pulse
Min.
300 --- --- 3.0 --- --- --- --- --- 78 --- --- 100 --- ---
Typ. Max. Units
--- 220 49 --- -15 --- --- --- --- --- 165 61 --- 1960 3740 7370 520 220 320 5.0 13 --- --- 59 5.0 --- 5.0 150 100 -100 --- 247 --- --- --- --- --- --- --- --- --- nH --- pF ns J S nC nA V m V mV/C A
Conditions
VGS = 0V, ID = 250A VGS = 10V, ID = 33A e VDS = VGS, ID = 250A VDS = 240V, VGS = 0V VDS = 240V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VDS = 25V, ID = 33A VDD = 150V, ID = 33A, VGS = 10Ve VDD = 240V, VGS = 15V, RG= 5.1 L = 220nH, C= 0.4F, VGS = 15V VDS = 240V, RG= 4.7, TJ = 25C L = 220nH, C= 0.4F, VGS = 15V VDS = 240V, RG= 4.7, TJ = 100C VGS = 0V VDS = 25V = 1.0MHz, Between lead, 6mm (0.25in.) from package and center of die contact
G S
mV/C Reference to 25C, ID = 1mA
Ciss Coss Crss Coss eff. LD LS
Input Capacitance Output Capacitance Reverse Transfer Capacitance Effective Output Capacitance Internal Drain Inductance Internal Source Inductance
--- --- --- --- --- ---
See Fig.9
VGS = 0V, VDS = 0V to 240V
D
Avalanche Characteristics
Parameter Typ. Max. Units mJ mJ V A
EAS EAR VDS(Avalanche) IAS
Single Pulse Avalanche Energyd Repetitive Avalanche Energy c Repetitive Avalanche Voltage Avalanche Current d c
--- --- 360 ---
700 43 --- 33
Diode Characteristics
Parameter
IS @ TC = 25C Continuous Source Current (Body Diode) ISM VSD trr Qrr Pulsed Source Current (Body Diode) c --- --- --- --- 300 2330 1.0 450 3500 V ns nC Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge --- --- 190
Min.
---
Typ. Max. Units
--- 46 A
Conditions
MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25C, IS = 33A, VGS = 0V e TJ = 25C, IF = 33A, VDD = 50V di/dt = 100A/s e
2
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IRFP4242PBF
1000
TOP
1000
VGS 15V 10V 8.0V 7.0V TOP VGS 15V 10V 8.0V 7.0V
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
BOTTOM
BOTTOM
100
7.0V
100
7.0V
10
10
60s PULSE WIDTH Tj = 25C
1 0.1 1 10 100 1 0.1 1
60s PULSE WIDTH Tj = 175C
10 100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1000.0
Fig 2. Typical Output Characteristics
3.5
RDS(on) , Drain-to-Source On Resistance
ID = 33A
3.0
ID, Drain-to-Source Current()
VGS = 10V
100.0
(Normalized)
TJ = 175C TJ = 25C
10.0
2.5
2.0
1.5
VDS = 30V
1.0 4.0 5.0 6.0
1.0
60s PULSE WIDTH
7.0 8.0
0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 180
VGS, Gate-to-Source Voltage (V)
TJ , Junction Temperature (C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance vs. Temperature
4000
4000 3500
Energy per pulse (J)
2500 2000 1500 1000 500 180 200 220 240
Energy per pulse (J)
3000
L = 220nH C = 0.4F 100C 25C
3000
L = 220nH C = Variable 100C 25C
2000
1000
0 170 180 190 200 210 220 230 240 250
VDS, Drain-to -Source Voltage (V)
Fig 5. Typical EPULSE vs. Drain-to-Source Voltage
Fig 6. Typical EPULSE vs. Drain Current
ID, Peak Drain Current (A)
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IRFP4242PBF
5000
1000.0
L = 220nH
4000
Energy per pulse (J)
C= 0.4F C= 0.3F C= 0.2F
ISD , Reverse Drain Current (A)
100.0
TJ = 175C
3000
10.0
2000
1000
1.0
TJ = 25C VGS = 0V
0 25 50 75 100 125 150
0.1 0.2 0.4 0.6 0.8 1.0 1.2
Temperature (C)
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical EPULSE vs.Temperature
12000 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd
Fig 8. Typical Source-Drain Diode Forward Voltage
20
VGS, Gate-to-Source Voltage (V)
ID= 33A VDS = 240V VDS= 150V VDS= 60V
10000
16
C, Capacitance (pF)
8000
Ciss
12
6000
8
4000
4
2000
Coss Crss
1 10 100 1000
0
0 0 40 80 120 160 200 240 280 QG Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)
Fig 9. Typical Capacitance vs.Drain-to-Source Voltage
Fig 10. Typical Gate Charge vs.Gate-to-Source Voltage
1000
ID, Drain-to-Source Current (A)
48 42
OPERATION IN THIS AREA LIMITED BY R DS (on) 1sec
ID , Drain Current (A)
36 30 24 18 12 6 0 25 50 75 100 125 150 175
100
10
100sec
10sec
1 Tc = 25C Tj = 175C Single Pulse 0.1 1 10 100 1000
TC , CaseTemperature (C)
VDS , Drain-to-Source Voltage (V)
Fig 11. Maximum Drain Current vs. Case Temperature
Fig 12. Maximum Safe Operating Area
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IRFP4242PBF
m RDS (on), Drain-to -Source On Resistance ( )
EAS, Single Pulse Avalanche Energy (mJ)
600
3000
ID = 33A
500
2500
ID 4.9A 6.3A BOTTOM 33A
TOP
400
2000
300
1500
200
TJ = 125C TJ = 25C
1000
100
500
0 4.0 6.0 8.0 10.0 12.0 14.0 16.0
0 25 50 75 100 125 150 175
VGS, Gate-to-Source Voltage (V)
Starting TJ, Junction Temperature (C)
Fig 13. On-Resistance Vs. Gate Voltage
5.0
Fig 14. Maximum Avalanche Energy Vs. Temperature
140 120
VGS(th) Gate threshold Voltage (V)
4.5
Repetitive Peak Current (A)
4.0 3.5 3.0 2.5 2.0 1.5 -75 -50 -25 0 25 50
ID = 250A
100 80 60 40 20 0
ton= 1s Duty cycle = 0.25 Half Sine Wave Square Pulse
75
100 125 150 175
25
50
75
100
125
150
175
TJ , Temperature ( C )
Case Temperature (C)
Fig 15. Threshold Voltage vs. Temperature
1
Fig 16. Typical Repetitive peak Current vs. Case temperature
Thermal Response ( Z thJC )
D = 0.50
0.1
0.20 0.10 0.05 0.02 0.01
J R1 R1 J 1 2 R2 R2 C 2
0.01
Ri (C/W) i (sec) 0.1315 0.000555 0.2186 0.023373
1
0.001
Ci= i/Ri Ci i/Ri
SINGLE PULSE ( THERMAL RESPONSE )
0.0001 1E-006 1E-005 0.0001 0.001
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc
0.01 0.1
t1 , Rectangular Pulse Duration (sec)
Fig 17. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRFP4242PBF
D.U.T
Driver Gate Drive
+
P.W.
Period
D=
P.W. Period VGS=10V
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
-
-
+
RG
* * * * di/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
VDD
VDD
+ -
Re-Applied Voltage
Body Diode
Forward Drop
Inductor Curent Inductor Current
Ripple 5% ISD
* VGS = 5V for Logic Level Devices Fig 18. Diode Reverse Recovery Test Circuit for N-Channel HEXFET(R) Power MOSFETs
V(BR)DSS
15V
tp
DRIVER
VDS
L
RG
VGS 20V
D.U.T
IAS tp
+ V - DD
A
0.01
I AS
Fig 19a. Unclamped Inductive Test Circuit
Fig 19b. Unclamped Inductive Waveforms
Id Vds Vgs
L
0
DUT 1K
VCC
Vgs(th)
Qgs1 Qgs2
Qgd
Qgodr
Fig 20a. Gate Charge Test Circuit
Fig 20b. Gate Charge Waveform
6
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IRFP4242PBF
Fig 21a. tst and EPULSE Test Circuit
Fig 21b. tst Test Waveforms
Fig 21c. EPULSE Test Waveforms
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IRFP4242PBF
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
TO-247AC Part Marking Information
EXAMPLE: THIS IS AN IRFPE30 WITH ASSEMBLY LOT CODE 5657 ASSEMBLED ON WW 35, 2000 IN THE AS SEMBLY LINE "H"
Note: "P" in assembly line position indicates "Lead-Free"
INT ERNATIONAL RECTIFIER LOGO AS SEMBLY LOT CODE
PART NUMBER
IRFPE30
56 035H 57
DATE CODE YEAR 0 = 2000 WEEK 35 LINE H
TO-247AC package is not recommended for Surface Mount Application.
Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25C, L = 1.28mH, RG = 25, IAS = 33A. Pulse width 400s; duty cycle 2%. R is measured at TJ of approximately 90C. Half sine wave with duty cycle = 0.25, ton=1sec.
Data and specifications subject to change without notice. This product has been designed for the Industrial market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.07/05
8
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