View IRHM93160_296282.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

Preliminary Data Sheet No. PD-9.1415B
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET TRANSISTOR
-100 Volt, 0.073, RAD HARD HEXFET
International Rectifier's P-Channel RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiation doses as high as 3 X 105 Rads (Si). Under identical pre- and postradiation test conditions, International Rectifier's P-Channel RAD HARD HEXFETs retain identical electrical specifications up to 1 x 105 Rads (Si) total dose. No compensation in gate drive circuitry is required. These devices are also capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds. Single Event Effect (SEE) testing of International Rectifier P-Channel RAD HARD HEXFETs has demonstrated virtual immunity to SEE failure. Since the PChannel RAD HARD process utilizes International Rectifier's patented HEXFET technology, the user can expect the highest quality and reliability in the industry. P-Channel RAD HARD HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits in space and weapons environments.
(R)
IRHM9160 IRHM93160
P-CHANNEL
RAD HARD
Product Summary
Part Number IRHM9160 IRHM93160 BVDSS -100V -100V RDS(on) 0.073 0.073 ID -35*A -35*A
Features:
n n n n n n n n n n n n n
Radiation Hardened up to 3 x 105 Rads (Si) Single Event Burnout (SEB) Hardened Single Event Gate Rupture (SEGR) Hardened Gamma Dot (Flash X-Ray) Hardened Neutron Tolerant Identical Pre- and Post-Electrical Test Conditions Repetitive Avalanche Rating Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Electrically Isolated Ceramic Eyelets
Absolute Maximum Ratings
Parameter
ID @ VGS = -12V, TC = 25C ID @ VGS = -12V, TC = 100C IDM PD @ TC = 25C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Lead Temperature Weight -35* -22 -140 250 2.0 20 500 -35* 25 -16 -55 to 150
Pre-Radiation
IRHM9160, IRHM93160 Units A
W W/K V mJ A mJ V/ns
300 (0.063 in. (1.6mm) from case for 10s 9.3 (typical)
o
C 11/12/97
g
IRHM9160, IRHM93160 Device
Pre-Radiation
Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified)
Parameter
BVDSS Drain-to-Source Breakdown Voltage BVDSS/TJ Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current
Min
-100 -- -- -- -2.0 15 -- -- -- -- -- -- -- -- -- -- -- -- --
Typ Max Units
-- -0.11 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 8.7 8.7 -- -- 0.073 0.075 -4.0 -- -25 -250 -100 100 290 52 90 35 170 190 190 -- -- V V/C V S( ) A
Test Conditions
VGS =0 V, ID = -1.0mA Reference to 25C, ID = -1.0mA VGS = -12V, ID = -22A VGS = -12V, ID = -35A VDS = VGS, ID = -1.0mA VDS > -15V, IDS = -22A VDS= 0.8 x Max Rating,VGS=0V VDS = 0.8 x Max Rating VGS = 0V, TJ = 125C VGS =-20 V VGS = 20V VGS = -12V, ID = -35A VDS = Max Rating x 0.5 VDD = -50V, ID = -35A, RG = 2.35
IGSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance
nA nC
ns
nH
M a u e f o d i la, e s r d r m ran ed 6 m ( . 5 i ) f o p ckage m 02 n rm a t c n e o d e. o etr f i Maue fo suc la, esrd rm ore ed 6 m ( . 5 i ) f o p ckage m 02 n rm a t suc bnigpd o ore odn a.
ybl h Modified MOSFET s m o s ow ig te itrn l i d c a c s. n h ne a n u t n e
Ciss Coss Crss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
-- -- --
6000 1400 400
-- -- --
pF
VGS = 0V, VDS = -25 V f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
IS ISM VSD trr QRR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min Typ Max Units
-- -- -- -- -- -- -- -- -- -- -35 -140 -3.3 300 2.1
Test Conditions
Modified MOSFET symbol showing the integral reverse p-n junction rectifier. Tj = 25C, IS = -35A, VGS = 0V Tj = 25C, IF = -35A, di/dt -100A/s VDD -50V
A
V ns C
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC RthCS RthJA Junction-to-Case Case-to-Sink Junction-to-Ambient
Min Typ Max
-- -- -- -- 0.50 0.21 -- -- 48
Units
K/W
Test Conditions
Typical socket mount
* Current is limited by pin diameter ( Die current is 40A , see page 6 )
IRHM9160, IRHM93160 Device
Radiation Performance of P-Channel Rad Hard HEXFETs
International Rectifier Radiation Hardened HEXFETs are tested to verify their hardness capability. The hardness assurance program at International Rectifier uses two radiation environments. Every manufacturing lot is tested in a low dose rate (total dose) environment per MlL-STD-750, test method 1019. International Rectifier has imposed a standard gate voltage of -12 volts per note 6 and a VDSS bias condition equal to 80% of the device rated voltage per note 7. Pre- and post-radiation limits of the devices irradiated to 1 x 105 Rads (Si) are identical and are presented in Table 1. The values in Table 1 will be met for either of the two low dose rate test circuits that are used. Both pre- and post-radiation performance are tested and specified using the same
Radiation Characteristics
drive circuitry and test conditions in order to provide a direct comparison. It should be noted that at a radiation level of 1 x 105 Rads (Si) no changes in limits are specified in DC parameters. High dose rate testing may be done on a special request basis using a dose rate up to 1 x 1012 Rads (Si)/Sec. International Rectifier radiation hardened P-Channel HEXFETs are considered to be neutron-tolerant, as stated in MIL-PRF-19500 Group D. International Rectifier radiation hardened P-Channel HEXFETs have been characterized in heavy ion Single Event Effects (SEE) environments and the results are shown in Table 3.
Table 1. Low Dose Rate
Parameter
BVDSS VGS(th) IGSS IGSS IDSS RDS(on)1 VSD
IRHM9160 IRHM93160
100K Rads (Si) 300K Rads (Si) Units
Test Conditions
VGS = 0V, ID = -1.0mA VGS = VDS, ID = -1.0mA VGS = -20V VGS = 20V VDS=0.8 x Max Rating, VGS=0V VGS = -12V, ID = -22A TC = 25C, IS = -35A,VGS = 0V
Min Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source On-State Resistance One Diode Forward Voltage
Max
Min -100 -2.0 -- -- -- -- --
Max -- -5.0 -100 100 -25 0.073 -3.3 V nA A V
-100 -- -2.0 -4.0 --- -100 -- 100 -- -25 -- 0.073 -- -3.3
Table 2. High Dose Rate
Parameter
VDSS IPP di/dt L1
1011 Rads (Si)/sec 1012 Rads (Si)/sec
Min Typ Max Min Typ Max Units -- -- -80 -- -- -- -- -80 -- -- V
Test Conditions
Drain-to-Source Voltage
-- -100 -- -800 0.1 --
-- -100 -- -160 0.5 --
Applied drain-to-source voltage during gamma-dot A Peak radiation induced photo-current A/sec Rate of rise of photo-current H Circuit inductance required to limit di/dt
Table 3. Single Event Effects
Parameter
BVDSS
Typical
-100
Units
V
Ion
Ni
LET (Si) (MeV/mg/cm2)
28
Fluence Range (ions/cm2) (m)
1 x 105 ~41
VDS Bias (V)
-100
VGS Bias (V)
5
IRHM9160, IRHM93160 Device
Pre-Radiation
1000
-I D , Drain-to-Source Current (A)
100
-I D , Drain-to-Source Current (A)
VGS -15V -12V -10V -9.0V -8.0V -7.0V -6.0V BOTTOM -5.0V TOP
1000
VGS -15V -12V -10V -9.0V -8.0V -7.0V -6.0V BOTTOM -5.0V TOP
100
-5.0V
10 1 10
20s PULSE WIDTH TJ = 25 C
100
10 1
-5.0V 20s PULSE WIDTH TJ = 150 C
10 100
-VDS , Drain-to-Source Voltage (V)
-VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
2.0
R DS(on) , Drain-to-Source On Resistance (Normalized)
ID = -40A
-I D , Drain-to-Source Current (A)
1.5
TJ = 25 C TJ = 150 C
100
1.0
0.5
10 5 6 7 8
V DS = -50V 20s PULSE WIDTH 9 10 11
0.0 -60 -40 -20
VGS = -12V
0 20 40 60 80 100 120 140 160
-VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
IRHM9160, IRHM93160 Device
Pre-Radiation
10000
8000
-VGS , Gate-to-Source Voltage (V)
VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd
20
ID = -35A VDS =-80V VDS =-50V VDS =-20V
16
C, Capacitance (pF)
Ciss
6000
12
4000
8
Coss
2000
4
Crss
0 1 10 100
0 0 50 100
FOR TEST CIRCUIT SEE FIGURE 13
150 200 250
-VDS , Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
1000
1000
-ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED BY RDS(on)
100
-ID , Drain Current (A) I
100
100us
TJ = 150 C
1ms 10
10
TJ = 25 C
10ms
1 0.0
V GS = 0 V
1.0 2.0 3.0 4.0 5.0
1 1
TC = 25 C TJ = 150 C Single Pulse
10 100 1000
-VSD ,Source-to-Drain Voltage (V)
-VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
IRHM9160, IRHM93160 Device
Pre-Radiation
40
VDS
LIMITED BY PACKAGE
RD
VGS RG
D.U.T.
+
-ID , Drain Current (A)
30
-12V
20
Pulse Width 1 s Duty Factor 0.1 %
Fig 10a. Switching Time Test Circuit
10
VGS 10%
td(on) tr t d(off) tf
0 25 50 75 100 125 150
90% VDS
TC , Case Temperature ( C)
Fig 9. Maximum Drain Current Vs. Case Temperature
Fig 10b. Switching Time Waveforms
1
Thermal Response (Z thJC )
0.50 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) P DM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1
0.1
0.01
0.001 0.00001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
-
VDD
IRHM9160, IRHM93160 Device
Pre-Radiation
VDS
L
1200
EAS , Single Pulse Avalanche Energy (mJ)
RG
D .U .T
IA S
VD D A D R IV E R
1000
ID -17A -25A BOTTOM -35A TOP
-12V -20V
tp
0.0 1
800
600
15V
400
Fig 12a. Unclamped Inductive Test Circuit
IAS
200
0 25 50 75 100 125 150
Starting TJ , Junction Temperature ( C)
tp V (BR)DSS
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K
QG
-12V 12V
.2F .3F
-12V
QGS VG QGD
VGS
-3mA
Charge
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
+
D.U.T.
-
VDS
IRHM9160, IRHM93160 Device
Repetitive Rating; Pulse width limited by
maximum junction temperature. Refer to current HEXFET reliability report. @ VDD = -25V, Starting TJ = 25C, EAS = [0.5 * L * (IL2) ] Peak IL = -35A, VGS = -12V, 25 RG ISD -35A, di/dt -480A/s, VDD BVDSS, TJ 150C Suggested RG = 2.35 Pulse width 300 s; Duty Cycle 2% K/W = C/W W/K = W/C
Pre-Radiation
Total Dose Irradiation with VGS Bias.
-12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019. Total Dose Irradiation with VDS Bias. VDS = 0.8 rated BVDSS (pre-radiation) applied and VGS = 0 during irradiation per MlL-STD-750, method 1019. This test is performed using a flash x-ray source operated in the e-beam mode (energy ~2.5 MeV), 30 nsec pulse. Process characterized by independent laboratory. All Pre-Radiation and Post-Radiation test conditions are identical to facilitate direct comparison for circuit applications.

Case Outline and Dimensions -- TO-254AA
.1 2 ( .0 0 5 ) 3 .7 8 ( .1 4 9 ) 3 .5 3 ( .1 3 9 ) -A 1 3 .8 4 ( .5 4 5 ) 1 3 .5 9 ( .5 3 5 ) 6 .6 0 ( .26 0 ) 6 .3 2 ( .24 9 ) -B 1 .27 ( .0 5 0 ) 1 .02 ( .0 4 0 )
17 .4 0 ( .6 8 5 ) 16 .8 9 ( .6 6 5 ) 3 1 .4 0 ( 1 .2 3 5 ) 3 0 .3 9 ( 1 .1 9 9 )
2 0 .3 2 ( .8 0 0 ) 2 0 .0 7 ( .7 9 0 )
1 3 .84 ( .5 4 5 ) 1 3 .59 ( .5 3 5 )
LEG END 1 - C O L L E C TO R W 2 - E M ITTE R 3 - G A TE
123
1
2
3 -C -
3X 3 .8 1 ( .1 5 0 ) 2X N O TE S :
1 .1 4 ( .0 4 5 ) 0 .8 9 ( .0 3 5 ) .50 ( .0 20 ) .25 ( .0 10 ) M C AM B MC
3 .8 1 ( .1 5 0 )
1 . D IM E N S IO N IN G & TO L E R A N C IN G P E R A N S I Y 1 4 .5 M , 19 8 2 . 2 . A L L D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S ( IN C H E S ).
LEGEND 1- DRAIN 2- SOURCE 3- GATE
LEGEND 1- DRAIN 2- SOURCE 3- GATE
Conforms to JEDEC Outline TO-254AA Dimensions in Millimeters and ( Inches )
CAUTION BERYLLIA WARNING PER MIL-PRF-19500 Package containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that will produce fumes containing beryllium.
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 11/97

▲Up To Search▲

Price & Availability of IRHM93160

	To Download IRHM93160 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .