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PD - 90397G
POWER MOSFET THRU-HOLE (MO-036AB)
Product Summary
Part Number IRFG9110 RDS(on) ID 1.4 -0.75A
IRFG9110 JANTX2N7335 JANTXV2N7335 REF:MIL-PRF-19500/599 100V, QUAD P-CHANNEL
HEXFET MOSFET TECHNOLOGY
(R)
HEXFET(R) MOSFET technology is the key to International
Rectifier's advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, high energy pulse circuits, and virtually any application where high reliability is required. The HEXFET transistor's totally isolated package eliminates the need for additional isolating material between the device and the heatsink. This improves thermal efficiency and reduces drain capacitance.
MO-036AB
Features:
n n n n n n
Simple Drive Requirements Ease of Paralleling Hermetically Sealed Electrically Isolated Dynamic dv/dt Rating Light-weight
Absolute Maximum Ratings
Parameter
ID @ VGS = -10V, TC = 25C ID @ VGS = -10V, TC = 100C IDM PD @ TC = 25C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Lead Temperature Weight For footnotes refer to the last page -0.75 -0.5 -3.0 1.4 0.011 20 75 -- -- -5.5 -55 to 150 300 ( 0.063 in.(1.6mm) from case for 10s) 1.3 (typical)
Units A
W
W/C
V mJ A mJ V/ns
o
C
g
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IRFG9110
Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified)
Parameter
BVDSS Drain-to-Source Breakdown Voltage BV DSS /T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current
Min
-100 -- -- -- -2.0 0.67 -- -- -- -- -- -- -- -- -- -- -- --
Typ Max Units
-- -0.098 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 10 -- -- 1.4 1.73 -4.0 -- -25 -250 -100 100 15 7.0 8.0 30 60 40 40 -- V V/C V S( ) A
Test Conditions
VGS = 0V, ID = -1.0mA Reference to 25C, ID = -1.0mA VGS = -10V, ID = -0.5A VGS = -10V, ID = -0.75A VDS = VGS, ID = -250A VDS > -15V, IDS = -0.5A VDS= -80V, VGS= 0V VDS = -80V VGS = 0V, TJ = 125C VGS = -20V VGS =20V VGS = -10V, ID= -0.75A VDS = -50V VDD = -50V, ID = -0.75A VGS = -10V, RG =7.5
IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance
nA
nC
ns
nH
Measured from drain lead (6mm/ 0.25in. from package) to source lead (6mm/0.25in. from package) VGS = 0V, VDS = -25V f = 1.0MHz
C iss C oss C rss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
-- -- --
200 85 30
-- --
pF
Source-Drain Diode Ratings and Characteristics
Parameter
IS ISM VSD t rr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min Typ Max Units
-- -- -- -- -- -- -- -- -- -- -0.75 -3.0 -5.5 200 9.0
Test Conditions
A
V nS c Tj = 25C, IS = -0.75A, VGS = 0V Tj = 25C, IF = -0.75A, di/dt -100A/s VDD -50V
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC RthJA Junction-to-Case Junction to Ambient
Min Typ Max Units
-- -- -- -- 17 90
C/W
Test Conditions
Typical socket mount
Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page
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IRFG9110
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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IRFG9110
13a & b
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
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IRFG9110
V DS VGS RG
RD
D.U.T.
+
-10V
Pulse Width 1 s Duty Factor 0.1 %
Fig 10a. Switching Time Test Circuit
td(on) tr t d(off) tf
VGS 10%
90%
Fig 9. Maximum Drain Current Vs. Case Temperature
VDS
Fig 10b. Switching Time Waveforms
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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V DD
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IRFG9110
VDS
L
RG
-10V -20V
D .U .T
IA S
VD D A D R IV E R
tp
0.0 1
15V
Fig 12a. Unclamped Inductive Test Circuit
IAS
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
tp V (BR)DSS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K
QG
-10V 12V
.2F .3F
VG
VGS
-3mA
Charge
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
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+
QGS
QGD
D.U.T.
-
-10V
VDS
IRFG9110
Repetitive Rating; Pulse width limited by
maximum junction temperature. VDD =-25V, starting TJ = 25C, L = 266mH Peak IL = -0.75A, VGS = -10V
Foot Notes:
ISD -0.75A, di/dt -75A/s,
VDD -100V, TJ 150C
Pulse width 300 s; Duty Cycle 2%
Case Outline and Dimensions -- MO-036AB
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 04/02
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