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| PT9730 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI PT9730 is Designed for Class C, 28 V High Band Applications up to 175 MHz. FEATURES: * Common Emitter * PG = 10 dB at 10W/175 MHz * OmnigoldTM Metalization System PACKAGE STYLE .380 4L STUD .112x45 A B C E OC E B MAXIMUM RATINGS IC VCBO VCEO VCES VEBO PDISS TJ TSTG JC O 1.0 A 60 V 35 V 60 V 4.0 V 10 W @ T = 25 C -65 C to +200 C -65 C to +150 C 17.5 C/W DIM A B C D E F G H I J D H I J #8-32 UNC-2A F E G MINIMUM inches / mm MAXIMUM inches / mm .220 / 5.59 .980 / 24.89 .370 / 9.40 .004 / 0.10 .320 / 8.13 .100 / 2.54 .450 / 11.43 .090 / 2.29 .155 / 3.94 .230 / 5.84 .385 / 9.78 .007 / 0.18 .330 / 8.38 .130 / 3.30 .490 / 12.45 .100 / 2.54 .175 / 4.45 .750 / 19.05 CHARACTERISTICS SYMBOL BVCBO BVCES BVCEO BVEBO ICES hFE Cob PG C IC = 50 mA TC = 25C NONETEST CONDITIONS IC = 200 mA IC = 100 mA IE = 10 mA VCE = 25 V VCE = 10 V VCB = 28 V VCC = 28 V POUT = 10 W IC = 500 mA f = 1.0 MHz f = 175 MHz MINIMUM TYPICAL MAXIMUM 60 60 35 4.0 0.5 20 150 12 13 60 UNITS V V V V mA --pF dB % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. B 1/1 |
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