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RURH30100CC
Data Sheet January 2000 File Number 2932.3
30A, 1000V Ultrafast Dual Diode
The RURH30100CC is an ultrafast dual diode with soft recovery characteristics (trr < 110ns). It has low forward voltage drop and is of silicon nitride passivated ionimplanted epitaxial planar construction. This device is intended for use as a freewheeling/clamping diode and rectifier in a variety of switching power supplies and other power switching applications. Its low stored charge and ultrafast recovery with soft recovery characteristic minimizes ringing and electrical noise in many power switching circuits, thus reducing power loss in the switching transistors. Formerly developmental type TA09904.
Features
* Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . . <110ns * Operating Temperature. . . . . . . . . . . . . . . . . . . . . . .175oC * Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . .1000V * Avalanche Energy Rated * Planar Construction
Applications
* Switching Power Supplies * Power Switching Circuits * General Purpose
Ordering Information
PART NUMBER RURH30100CC PACKAGE TO-218AC BRAND URH30100C
Packaging
JEDEC TO-218AC
ANODE 1 CATHODE ANODE 2 CATHODE (FLANGE)
NOTE: When ordering, use the entire part number.
Symbol
K
A1
A2
Absolute Maximum Ratings
(Per Leg) TC = 25oC, Unless Otherwise Specified RURH30100CC UNITS V V V A A A W mJ
oC
Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRRM Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRWM DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VR Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IF(AV) (TC = 120oC) Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IFRM (Square Wave, 20kHz) Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFSM (Halfwave, 1 Phase, 60Hz) Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Avalanche Energy (See Figures 7 and 8) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .EAVL Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TSTG, TJ
1000 1000 1000 30 60 300 125 30 -65 to 175
1
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RURH30100CC
Electrical Specifications
SYMBOL VF IF = 30A IF = 30A, TC = 150oC IR VR = 1000V VR = 1000V, TC = 150oC trr IF = 1A, dIF/dt = 100A/s IF = 30A, dIF/dt = 100A/s ta tb RJC DEFINITIONS VF = Instantaneous forward voltage (pw = 300s, D = 2%). IR = Instantaneous reverse current. trr = Reverse recovery time (See Figure 6), at dIF/dt = 100A/s summation of ta + tb. ta = Time to reach peak reverse current at dIF/dt = 100A/s (See Figure 6). tb = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 6). RJC = Thermal resistance junction to case. pw = Pulse width. D = Duty cycle. IF = 30A, dIF/dt = 100A/s IF = 30A, dIF/dt = 100A/s (Per Leg) TC = 25oC, Unless Otherwise Specified TEST CONDITION MIN TYP 90 45 MAX 1.8 1.6 250 1 110 150 1.2 UNITS V V A mA ns ns ns ns
oC/W
Typical Performance Curves
200 100 IR , REVERSE CURRENT (A) IF, FORWARD CURRENT (A) 400 100 TJ = 175oC
TJ = 175oC
10 TJ = 100oC 1.0
10
TJ = 100oC TJ = 25oC
0.1 TJ = 25oC
1
0.01 0 0.5 1.0 1.5 2.0 2.5 VF, FORWARD VOLTAGE DROP (V)
0
200
400
600
800
1000
VR , REVERSE VOLTAGE (V)
FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE
FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE
2
RURH30100CC Typical Performance Curves
200
(Continued)
35 IF(AVG) , AVERAGE CURRENT (A) 30 DC 25 20 15 10 5 0 100 SQUARE WAVE
t, RECOVERY TIMES (ns)
150
trr
100
ta
50
tb
0 1.0
10 IF, FORWARD CURRENT (A)
50
120
140
160
180
TC , CASE TEMPERATURE (oC)
FIGURE 3. trr, ta AND tb CURVES vs FORWARD CURRENT
FIGURE 4. CURRENT DERATING CURVE
Test Circuits and Waveforms
VGE AMPLITUDE AND RG CONTROL dIF/dt t1 AND t2 CONTROL IF L
DUT RG VGE t1 t2
CURRENT SENSE + VDD 0
IF
dIF dt ta
trr tb
IGBT
-
0.25 IRM IRM
FIGURE 5. trr TEST CIRCUIT
I = 1.225A L = 40mH R < 0.1 EAVL = 1/2LI2 [VR(AVL) /(VR(AVL) - VDD)] Q1 = IGBT (BVCES > DUT VR(AVL)) L CURRENT SENSE Q1 VDD DUT R + VDD IV
FIGURE 6. trr WAVEFORMS AND DEFINITIONS
VAVL
IL
IL
t0 t1 t2 t
FIGURE 7. AVALANCHE ENERGY TEST CIRCUIT
FIGURE 8. AVALANCHE CURRENT AND VOLTAGE WAVEFORMS
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
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