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| (R) SM6T6V8A/220A SM6T6V8CA/220CA TRANSILTM FEATURES PEAK PULSE POWER : 600 W (10/1000s) BREAKDOWN VOLTAGE RANGE : From 6.8V to 220 V. UNI AND BIDIRECTIONAL TYPES LOW CLAMPING FACTOR FAST RESPONSE TIME UL RECOGNIZED DESCRIPTION Transil diodes provide high overvoltage protection by clamping action. Their instantaneous response to transient overvoltages makes them particularly suited to protect voltage sensitive devices such as MOS Technology and low voltage supplied IC's. ABSOLUTE MAXIMUM RATINGS (Tamb = 25C) Symbol PPP P IFSM Parameter Peak pulse power dissipation (see note 1) Power dissipation on infinite heatsink Non repetitive surge peak forward current for unidirectional types Storage temperature range Maximum junction temperature Maximum lead temperature for soldering during 10 s. Tj initial = Tamb Tamb = 50C tp = 10ms Tj initial = Tamb Value 600 5 100 Unit W W A C C C SMB (JEDEC D0-214AA) Tstg Tj TL - 65 to + 175 150 260 Note 1 : For a surge greater than the maximum values, the diode will fail in short-circuit. THERMAL RESISTANCES Symbol Rth (j-l) Rth (j-a) Junction to leads Junction to ambient on printed circuit on recommended pad layout Parameter Value 20 100 Unit C/W C/W April 1998 Ed: 4 1/5 SM6Txx ELECTRICAL CHARACTERISTICS (Tamb = 25C) Symbol VRM VBR VCL IRM IPP Parameter Stand-off voltage Breakdown voltage Clamping voltage Leakage current @ VRM Peak pulse current Voltage temperature coefficient Forward voltage drop I PP VCL VBR V RM VF I RM V IF I T VF IRM @ VRM Types Uni directional SM6T6V8A SM6T7V5A SM6T10A SM6T12A SM6T15A SM6T18A SM6T22A SM6T24A SM6T27A SM6T30A SM6T33A SM6T36A SM6T39A SM6T68A SM6T100A SM6T150A SM6T200A SM6T220A Bi directional SM6T6V8CA SM6T7V5CA SM6T10CA SM6T12CA SM6T15CA SM6T18CA SM6T22CA SM6T24CA SM6T27CA SM6T30CA SM6T33CA SM6T36CA SM6T39CA SM6T68CA SM6T100CA SM6T150CA SM6T200CA SM6T220CA max V A * LE 1000 5.8 LG 500 6.4 LP 10 8.55 LT 5 10.2 LX 1 12.8 ME 1 15.3 MK 1 18.8 MM 1 20.5 MP 1 23.1 MR 1 25.6 MT 1 28.2 MV 1 30.8 MX 1 33.3 NQ 1 58.1 NY 1 85.5 OL 1 128 OU 1 171 OW 1 188 VBR @ IR VCL @ IPP max 10/1000s V A 10.5 57 11.3 53 14.5 41 16.7 36 21.2 28 25.2 24 30.6 20 33.2 18 37.5 16 41.5 14.5 45.7 13.1 49.9 12 53.9 11.1 92 6.5 137 4.4 207 2.9 274 2.2 328 2 VCL @ IPP max 8/20s V A 13.4 14.5 18.6 21.7 27.2 32.5 39.3 42.8 48.3 53.5 59.0 64.3 69.7 121 178 265 353 388 298 276 215 184 147 123 102 93 83 75 68 62 57 33 22.5 15 11.3 10.3 T C min nom max note2 V V V 6.45 7.13 9.5 11.4 14.3 17.1 20.9 22.8 25.7 28.5 31.4 34.2 37.1 64.6 95.0 143 190 209 6.8 7.5 10 12 15 18 22 24 27 30 33 36 39 68 100 150 200 220 7.14 7.88 10.5 12.6 15.8 18.9 23.1 25.2 28.4 31.5 34.7 37.8 41.0 71.4 105 158 210 231 mA 10 10 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 max typ note3 note4 10-4/C pF 5.7 6.1 7.3 7.8 8.4 8.8 9.2 9.4 9.6 9.7 9.8 9.9 10.0 10.4 10.6 10.8 10.8 10.8 4000 3700 2800 2300 1900 1600 1350 1250 1150 1075 1000 950 900 625 500 400 350 330 * DE DG DP DT DX EE EK EM EP ER ET EV EX FQ FY GL GU GW % I PP 100 10 s Fig. 1: Peak pulse power dissipation versus initial junction temperature (printed circuit board). PULSE WAVEFORM 10/1000 s 50 0 1000 s t Note 2 : Note 3 : Note 4 : Pulse test : tp < 50 ms. VBR = T * (Tamb - 25) * VBR(25C). VR = 0 V, F = 1 MHz. For bidirectional types, capacitance value is divided by 2. 2/5 (R) SM6Txx Fig. 2 : Peak pulse power versus exponential pulse duration. Fig. 3 : Clamping voltage versus peak pulse current. Exponentialwaveform tp = 20 s ________ tp = 1 ms ------------tp = 10 ms ............... Note : The curves of the figure 3 are specified for a junction temperature of 25 C before surge. The given results may be extrapolatedfor other junction temperatures by using the following formula : VBR = T * [Tamb -25] * VBR(25C) For intermediate voltages, extrapolate the given results. 3/5 (R) SM6Txx Fig. 4a : Capacitance versus reverse applied voltage for unidirectional types (typical values). Fig. 4b : Capacitance versus reverse applied voltage for bidirectional types (typical values). Fig. 5 : Peak forward voltage drop versus peak forward current (typical values for unidirectional types). Fig. 6 : Transient thermal impedance junctionambient versus pulse duration. Mounting on FR4 PC Board with Recommended pad layout. Fig. 7 : Relative variation of leakage current versus junction temperature. 4/5 (R) SM6Txx ORDER CODE SM 6 T 100 SURFACE MOUNT 600 WATT CA BIDIRECTIONAL No suffix : Unidirectional BREAKDOWN VOLTAGE MARKING : Logo, Date Code, Type Code, Cathode Band (for unidirectional types only). PACKAGE MECHANICAL DATA SMB (Plastic) E1 DIMENSIONS REF. Millimeters Min. D Inches Typ. Max. Typ. Max. Min. 2.15 0.15 A1 A2 b c E 1.90 0.05 1.95 0.15 5.10 4.05 3.30 0.75 2.45 0.075 0.085 0.096 0.20 0.002 0.006 0.008 2.20 0.077 0.41 0.006 0.087 0.016 E A1 A2 L b 5.40 4.30 3.60 1.15 5.60 0.201 0.213 0.220 4.60 0.159 0.169 0.181 3.95 0.130 0.142 0.156 1.60 0.030 0.045 0.063 c E1 D L Weight = 0.12 g FOOTPRINT DIMENSIONS (Millimeter) SMB Plastic. 2.3 1.52 2.75 1.52 Packaging : standard packaging is tape and reel. Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. (c) 1998 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved. SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 5/5 (R) |
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