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| J/SST111 Series N-Channel JFETs J111 J112 J113 Product Summary Part Number VGS(off) (V) J/SST111 J/SST112 J/SST113 -3 to -10 -1 to -5 v-3 SST111 SST112 SST113 rDS(on) Max (W) 30 50 100 ID(off) Typ (pA) 5 5 5 tON Typ (ns) 4 4 4 Features D D D D D Low On-Resistance: 111 < 30 W Fast Switching--tON: 4 ns Low Leakage: 5 pA Low Capacitance: 3 pF Low Insertion Loss Benefits D D D D D Low Error Voltage High-Speed Analog Circuit Performance Negligible "Off-Error," Excellent Accuracy Good Frequency Response, Low Glitches Eliminates Additional Buffering Applications D D D D D Analog Switches Choppers Sample-and-Hold Normally "On" Switches Current Limiters Description The J/SST111 series consists of all-purpose analog switches designed to support a wide range of applications. The J/SST113 are useful in a high-gain amplifier mode. The J series, TO-226AA (TO-92) plastic package, provides low cost, while the SST series, TO236 (SOT-23) package, provides surface-mount capability. Both the J and SST series are available in tape-and-reel for automated assembly (see Packaging Information). TO-226AA (TO-92) D 1 TO-236 (SOT-23) For similar products in TO-206AA(TO-18) packaging, see the 2N/PN/SST4391 series, 2N4856A/4857A/4858A, and 2N5564/5565/5566 (duals) data sheets. D 1 3 G S 2 S 2 G 3 Top View Top View J111 J112 J113 SST111 (C1)* SST112 (C2)* SST113 (C3)* *Marking Code for TO-236 Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70232. Applications information may also be obtained via FaxBack, request document #70598. Siliconix S-52424--Rev. D, 14-Apr-97 1 J/SST111 Series Absolute Maximum Ratings Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . -35 V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA Lead Temperature (1/16" from case for 10 seconds) . . . . . . . . . . 300 _C Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to 150_C Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . -55 to 150_C Power Dissipationa (TO-236) . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW (TO-226AA) . . . . . . . . . . . . . . . . . . . . . . 360 mW Notes a. Derate 2.8 mW/_C above 25_C Specificationsa Limits J/SST111 J/SST112 J/SST113 Parameter Static Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Currentc Gate Reverse Current Gate Operating Current Drain Cutoff Current Drain-Source On-Resistance Gate-Source Forward Voltage Symbol Test Conditions Typb Min Max Min Max Min Max Unit V(BR)GSS VGS(off) IDSS IGSS IG ID( ff) D(off) rDS(on) VGS(F) IG = -1 mA , VDS = 0 V VDS = 5 V, ID = 1 mA VDS = 15 V, VGS = 0 V VGS = -15 V, VDS = 0 V TA = 125_C VDG = 15 V, ID = 10 mA VDS = 5 V, VGS = -10 V TA = 125_C VGS = 0 V, VDS = 0.1 V IG = 1 mA , VDS = 0 V -55 -35 -3 20 -10 -35 -1 5 -1 -1 -5 -35 V -3 2 -1 nA mA -0.005 -3 -5 0.005 3 pA 1 1 1 nA 30 50 100 W V 0.7 Dynamic Common-Source Forward Transconductance Common-Source Output Conductance Drain-Source On-Resistance Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance Equivalent Input Noise Voltage gfs gos rds(on) Ciss Crss en VDG = 10 V, ID = 1 mA f = 1 kHz VGS = 0 V, ID = 0 mA f = 1 kHz VDS = 0 V, VGS = -10 V S f = 1 MHz 7 3 3 6 VDS = 20 V, ID = 1 mA S f = 1 kHz 25 30 12 5 50 12 5 100 12 pF 5 nV Hz mS mS W Switching Turn-On Turn On Time td(on) tr Turn-Off Time td(off) tf VDD = 10 V, VGS(H) = 0 V () See Switching Circuit S S i hi Ci i 2 2 ns 6 15 NCB Notes a. TA = 25_C unless otherwise noted. b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. c. Pulse test: PW v300 ms duty cycle v3%. 2 Siliconix S-52424--Rev. D, 14-Apr-97 J/SST111 Series Typical Characteristics 100 rDS(on) - Drain-Source On-Resistance ( W ) On-Resistance and Drain Current vs. Gate-Source Cutoff Voltage rDS @ ID = 1 mA, VGS = 0 IDSS @ VDS = 20 V, VGS = 0 200 rDS(on) - Drain-Source On-Resistance ( W ) I DSS - Saturation Drain Current (mA) 100 On-Resistance vs. Drain Current TA = 25_C 80 rDS IDSS 160 80 VGS(off) = -2 V 60 120 60 40 80 40 -4 V -8 V 20 40 20 0 0 -2 -4 -6 -8 -10 VGS(off) - Gate-Source Cutoff Voltage (V) 0 0 1 10 ID - Drain Current (mA) 100 On-Resistance vs. Temperature 200 rDS(on) - Drain-Source On-Resistance ( W ) ID = 1 mA rDS changes X 0.7%/_C 160 Switching Time (ns) 5 Turn-On Switching tr approximately independent of ID VDD = 5 V, RG = 50 W VGS(L) = -10 V tr 4 120 VGS(off) = -2 V 3 td(on) @ ID = 12 mA 2 80 -4 V -8 V 40 1 td(on) @ ID = 3 mA 0 -55 -35 -15 5 25 45 65 85 105 125 TA - Temperature (_C) 30 0 0 -2 -4 -6 -8 -10 VGS(off) - Gate-Source Cutoff Voltage (V) 30 Turn-Off Switching td(off) independent of device VGS(off) VDD = 5 V, VGS(L) = -10 V Capacitance vs. Gate-Source Voltage f = 1 MHz 24 Switching Time (ns) Capacitance (pF) 24 18 tf @ VGS(off) = -2 V 18 12 td(off) 6 tf @ VGS(off) = -8 V 0 0 2 4 6 8 10 ID - Drain Current (mA) 12 Ciss @ VDS = 0 V 6 Crss @ VDS = 0 V 0 0 -4 -8 -12 -16 -20 VGS - Gate-Source Voltage (V) Siliconix S-52424--Rev. D, 14-Apr-97 3 J/SST111 Series Typical Characteristics (Cont'd) 100 Noise Voltage vs. Frequency g fs - Forward Transconductance (mS) VDS = 10 V Forward Transconductance and Output Conductance vs. Gate-Source Cutoff Voltage 50 500 gfs and gos @ VDS = 20 V VGS = 0 V, f = 1 kHz g os - Output Conductance ( mS) 40 gfs 30 gos 250 20 e n - Noise Voltage (nV / Hz) 10 ID = 1 mA ID = 10 mA 10 1 10 100 1k f - Frequency (Hz) 10 k 100 k 0 0 -2 -4 -6 -8 -10 VGS(off) - Gate-Source Cutoff Voltage (V) 0 Gate Leakage Current 10 nA TA = 125_C ID = 10 mA 1 mA 100 pA (mS) 1 mA 10 pA TA = 25_C 1 pA 10 mA IGSS @ 25_C IGSS @ 125_C 100 Common-Gate Input Admittance VDG = 10 V ID = 10 mA TA = 25_C 10 big 1 nA I G - Gate Leakage gig 1 0.1 pA 0 6 12 18 24 30 VDG - Drain-Gate Voltage (V) 0.1 100 200 500 1000 f - Frequency (MHz) Common-Gate Forward Admittance 100 VDG = 10 V ID = 10 mA TA = 25_C -gfg 10 (mS) (mS) gfg bfg 1.0 10 Common-Gate Reverse Admittance VDG = 10 V ID = 10 mA TA = 25_C -brg +grg 0.1 -grg 1 0.1 100 200 500 1000 f - Frequency (MHz) 0.01 100 200 500 1000 f - Frequency (MHz) 4 Siliconix S-52424--Rev. D, 14-Apr-97 J/SST111 Series Typical Characteristics (Cont'd) Common-Gate Output Admittance 100 VDG = 10 V ID = 10 mA TA = 25_C bog 10 (mS) I D - Drain Current (mA) 100 Output Characteristics VGS(off) = -4 V 80 60 VGS = 0 V -0.5 gog 1 40 -1.0 -1.5 20 -2.0 -2.5 0 2 4 6 8 10 0.1 100 200 500 1000 f - Frequency (MHz) 0 VDS - Drain-Source Voltage (V) 40 Output Characteristics VGS(off) = -4 V 100 Transfer Characteristics VGS(off) = -4 V VDS = 20 V 32 I D - Drain Current (mA) I D - Drain Current (mA) VGS = 0 V 24 -0.5 -1.0 16 -1.5 -2.0 8 -2.5 -3.0 0 0 0.2 0.4 0.6 0.8 1.0 VDS - Drain-Source Voltage (V) 80 TA = -55_C 60 25_C 40 20 125_C 0 0 -1 -2 -3 -4 -5 VGS - Gate-Source Voltage (V) Switching Time Test Circuit J/SST111 VGS(L) RL* ID(on) *Non-inductive -12 V 800 W 12 mA J/SST112 -7 V 1600 W 6 mA J/SST113 -5 V 3200 W 3 mA VGS(H) VDD RL OUT Input Pulse Rise Time < 1 ns Fall Time < 1 ns Pulse Width 100 ns PRF 1 MHz Sampling Scope Rise Time 0.4 ns Input Resistance 10 MW Input Capacitance 1.5 pF VGS(L) 1 kW VGS Scope 51 W 51 W Siliconix S-52424--Rev. D, 14-Apr-97 5 |
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