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DISCRETE SEMICONDUCTORS
DATA SHEET
BLW30 VHF power transistor
Product specification September 1991
Philips Semiconductors
Product specification
VHF power transistor
FEATURES * Emitter-ballasting resistors for an optimum temperature profile * Excellent reliability * Withstands full load mismatch. DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a 4-lead 38 inch SOT120 capstan envelope with a ceramic cap. It is designed for common emitter, class-B operation mobile VHF transmitters with a supply voltage of 12.5 V. All leads are isolated from the stud. PINNING - SOT120 PIN 1 2 3 4 DESCRIPTION collector emitter base emitter
1 3
handbook, halfpage halfpage
BLW30
QUICK REFERENCE DATA RF performance at Tmb = 25 C in a common emitter test circuit. MODE OF OPERATION c.w. class-B f (MHz) 175 VCE (V) 12.5 WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. 30 PL (W) GP (dB) > 10 C (%) > 55
PIN CONFIGURATION
4
c
b
MBB012
e
2
MSB056
Fig.1 Simplified outline and symbol.
September 1991
2
Philips Semiconductors
Product specification
VHF power transistor
LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL VCBO VCEO VEBO IC, IC(AV) ICM Ptot PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current collector current total power dissipation CONDITIONS open emitter open base open collector DC or average value peak value f > 1 MHz RF operation; f > 1 MHz; Tmb = 25 C - - - - - - MIN.
BLW30
MAX. 36 16 3 6 18 100
UNIT V V V A A W
Tstg Tj
storage temperature range junction operating temperature
-65 -
150 200
C C
120 handbook, halfpage Ptot (W) 100
MRA382
II 80 I
60
40
20
0 0 20 40 60 80 100 120
o
Th ( C) (I) Continuous RF operation (f > 1 MHz). (II) Short time operation during mismatch (f > 1 MHz).
Fig.2 Power/temperature derating curve.
THERMAL RESISTANCE SYMBOL Rth j-mb(RF) Rth mb-h PARAMETER from junction to mounting base from mounting base to heatsink CONDITIONS Ptot = 100 W; Tmb = 25 C MAX. 1.75 0.45 UNIT K/W K/W
September 1991
3
Philips Semiconductors
Product specification
VHF power transistor
CHARACTERISTICS Tj = 25 C. SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICES hFE fT PARAMETER collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector-emitter leakage current DC current gain transition frequency CONDITIONS open emitter; Ic = 10 mA open base; Ic = 25 mA open collector; IE = 2 mA VBE = 0; VCE = 16 V VCE = 5 V; IC = 4 A VCE = 12.5 V; IE = 4 A; f = 500 MHz VCB = 12.5 V; IE = Ie = 0; f = 1 MHz VCE = 12.5 V; IC = 0; f = 1 MHz f = 1 MHz MIN. 36 16 3 - 25 - - - - - 35 1.6 TYP. - - - 10 - -
BLW30
MAX.
UNIT V V V mA
GHz
Cc
collector capacitance
-
90
100
pF
Cre
feedback capacitance
-
60
70
pF
Cc-s
collector-stud capacitance
-
2
-
pF
MRA378
MRA374.1
handbook, 50 halfpage
250 handbook, halfpage Cc (pF) 200 VCE = 12.5 V
h
FE 40
30 VCE = 5 V
150
20
100
10
50
0
0 0 4 8 12 IC (A) 16 0 4 8 12 16 VCB (V)
IE = ie = 0; f = 1 MHz.
Fig.3
DC current gain as a function of collector current, typical values.
Fig.4
Collector capacitance as a function of collector-base voltage, typical values.
September 1991
4
Philips Semiconductors
Product specification
VHF power transistor
BLW30
handbook, halfpage
2
MRA375
fT (GHz) 1.5
1
0.5
0 0 2 4 6 8 I E (A) VCB = 12.5 V. 10
Fig.5
Transition frequency as a function of emitter current, typical values.
September 1991
5
Philips Semiconductors
Product specification
VHF power transistor
APPLICATION INFORMATION RF performance at Tmb = 25 C in a common emitter test circuit. MODE OF OPERATION c.w. class-B 175 f (MHz) 12.5 VCE (V) 30 PL (W) GP (dB) > 10 typ. 11
BLW30
C (%) > 55 typ. 60
MRA376
MRA381
handbook, halfpage
16
80 GP (%) 60
handbook, halfpage
50
GP (dB) 12
P L (W)
40
30 8 40 20
4
20 10
0 10
20
30
40 P (W) L
0
0 0 1 2 3 4 5 6 P (W) IN
Class-B operation; VCE = 12.5 V; f = 175 MHz.
Class-B operation; VCE = 12.5 V; f = 175 MHz.
Fig.6
Gain and efficiency as functions of load power, typical values.
Fig.7
Load power as a function of drive power, typical values.
Ruggedness in class-B operation The BLW30 is capable of withstanding a full load mismatch corresponding to VSWR = 50:1 through all phases at rated output power, up to a supply voltage of 15.5 V, and f = 175 MHz.
September 1991
6
Philips Semiconductors
Product specification
VHF power transistor
BLW30
handbook, full pagewidth
C3a C1 50 C2 L1 L4 C3b T.U.T.
L5
L8
C6 50 C7
L6 L2 C4 C5 R2
R1
L3
L7
MGP427
+VCC
Fig.8 Class-B test circuit at f = 175 MHz.
List of components (see test circuit) COMPONENT C1 C2, C7 C3a, C3b C4 C5 C6 L1 L2 L3, L7 L4, L5 L6 L8 R1, R2 Notes 1. The striplines are on a double copper-clad printed circuit board, with epoxy fibre-glass dielectric, thickness 116 inch. 2. Taps for capacitors C3a and C3b are situated 5 mm from the transistor. DESCRIPTION film dielectric trimmer film dielectric trimmer 500 V ceramic capacitor ceramic capacitor polyester capacitor film dielectric trimmer
1 2
VALUE 2.5 to 20 pF 4 to 40 pF 47 pF 120 pF 100 nF 7 to 100 pF
DIMENSIONS
CATALOGUE NO. 2222 809 07004 2222 809 07008
2222 809 07015 int. dia. 6 mm; leads 2 x 5 mm
turn enamelled 1.6 mm copper wire 100 nH
7 turns closely wound enamelled 0.5 mm copper wire grade 3B Ferroxcube wideband HF choke stripline (note 1) 312 turns closely wound enamelled 1.6 mm copper wire 1 turn enamelled 1.6 mm copper wire 0.25 W carbon resistor
int. dia. 3 mm; leads 2 x 5 mm 4312 020 36640 12 mm x 6 mm; note 2 int. dia. 6 mm; leads 2 x 5 mm int. dia. 6 mm; leads 2 x 5 mm
10 , 5%
September 1991
7
Philips Semiconductors
Product specification
VHF power transistor
BLW30
150
handbook, full pagewidth
72
L3 C4
L7 +VCC
R1 L2 C1 C2 L1 C3a L4 L5
C5
R2
L6 C6 L8 C7
C3b
rivet
MGP428
The circuit and components are situated on one side of an epoxy fibre-glass board; the other side is unetched and serves as a ground plane. Earth connections are made by means of hollow rivets and copper straps under the emitters, to provide a direct contact between the component side and the ground plane.
Fig.9 Component layout for 175 MHz class-B test circuit.
September 1991
8
Philips Semiconductors
Product specification
VHF power transistor
BLW30
handbook, halfpage
3
MRA379
MRA380
4 handbook, halfpage ZL ()
Zi ()
3
RL
2
2 ri
1
1 xi
0 XL -1
0 100
150
200
f (MHz)
250
-2 100
150
200
f (MHz)
250
Class-B operation; VCE = 12.5 V; PL = 30 W.
Class-B operation; VCE = 12.5 V; PL = 30 W.
Fig.10 Input impedance (series components) as a function of frequency, typical values.
Fig.11 Load impedance (series components) as a function of frequency, typical values.
MRA377
handbook, halfpage GP
(dB) 15
10
handbook, halfpage
5 Zi ZL
MBA451
0 100
150
200
f (MHz)
250
Class-B operation; VCE = 12.5 V; PL = 30 W.
Fig.12 Definition of transistor impedance.
Fig.13 Power gain as a function of frequency, typical values.
September 1991
9
Philips Semiconductors
Product specification
VHF power transistor
PACKAGE OUTLINE Studded ceramic package; 4 leads
D
BLW30
SOT120A
A Q c
N1 N
D1 D2
A w1 M A M W
N3 X H b detail X M1
4 L
3 H 1
2
0
5 scale
10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm A 5.97 4.74 b 5.90 5.48 c 0.18 0.14 D 9.73 9.47 D1 8.39 8.12 D2 9.66 9.39 H 27.44 25.78 L 9.00 8.00 M 3.41 2.92 M1 1.66 1.39 N 12.83 11.17 N1 1.60 0.00 N3 3.31 2.54 0.130 0.100 Q 4.35 3.98 0.171 0.157 W w1 0.38 8-32 UNC 0.015
inches 0.283 0.248
0.232 0.007 0.216 0.004
0.383 0.330 0.380 1.080 0.373 0.320 0.370 1.015
0.354 0.134 0.315 0.115
0.065 0.505 0.063 0.055 0.440 0.000
OUTLINE VERSION SOT120A
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-06-28
September 1991
10
Philips Semiconductors
Product specification
VHF power transistor
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BLW30
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
September 1991
11

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