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| Eudyna GaN-HEMT 45W Preliminary FEATURES High Voltage Operation : VDS=50V High Gain: 16dB(typ.) at Pout=39dBm(Avg.) High Efficiency: 35%(typ.) at Pout=39dBm(Avg.) Broad Frequency Range : 2100 to 2200MHz Proven Reliability EGN21A045IV High Voltage - High Power GaN-HEMT DESCRIPTION The EGN21A045IV is a 45 Watt GaN-HEMT that offers high efficiency, high gain, ease of matching, greater consistency and broad bandwidth for high power L-band amplifiers with 50V operation. This device is targeted for high voltage, low current operation in digitally modulated base station applications - ideally suited for W-CDMA base station amplifiers and other HPA designs while offering ease of use. ABSOLUTE MAXIMUM RATINGS Item Symbol Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature VDS VGS Pt Tstg Tch Condition RECOMMENDED OPERATING CONDITION(Case Temperature Tc= 25oC) Item DC Input Voltage Forward Gate Current Reverse Gate Current Channel Temperature ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25oC) Item Symbol Condition Min. Pinch-Off Voltage Gate-Drain Breakdown Voltage 3rd Order Inter modulation Distortion Power Gain Drain Efficiency Thermal Resistance Vp VGDO IM3 Gp d Rth VDS=50V IDS=18mA IGS=- 9.0 mA VDS=50V IDS(DC)=250mA Pout=39dBm(Avg.) Note 1 Channel to Case -1.0 15.0 - r P Symbol VDS IGF IGR Tch im l e Condition RG=10 RG=10 120 Tc=25oC -5 112 -65 to +175 250 a in Rating Limit 50 <9.7 >-3.6 200 y r Unit V V W oC oC Unit V mA mA oC Limit Typ. Max. -2.0 -350 -32 16.0 35 1.8 -3.5 2.0 Unit V V dBc dB % oC/W Note 1 : IM3 and Gain test condition as follows: IM3 & Gain : fo=2.135GHz, f1=2.145GHz W-CDMA(3GPP3.4 12-00) BS-1 64ch 67% clipping modulation(Peak/Avg. = 8.5dB@0.01% Probability(CCDF)) measured over 3.84MHz at fo-10MHz and fI+10MHz. Edition 1.0 June 2005 1 EGN21A045IV High Voltage - High Power GaN-HEMT Output Power vs. Frequency VDS=50V, IDS=250mA 48 46 44 42 40 38 36 2.04 2.06 2.08 2.1 2.12 2.14 2.16 2.18 2.2 2.22 2.24 Frequency [GHz] Pin=21dBm Pin=27dBm Pin=33dBm Pin=23dBm Pin=29dBm Pin=35dBm Output Power [dBm] Output Power and Drain Efficiency vs. Input Power VDS=50V, IDS=250mA, f=2.14GHz 48 100 46 44 42 40 38 36 34 32 30 28 Output Power 90 Drain Efficiency [%] 80 70 60 50 Output Power [dBm] 2-tone IMD vs. Output Power VDS=50V, f1=2.135GHz, f2=2.145GHz, 10MHz Spacing -20 -25 -30 IM3 [dBc] -35 -40 -45 -50 24 26 28 30 32 34 36 38 40 42 44 Output Power(average) [dBm] 125mA 250mA 375mA 500mA r P im l e Pin=25dBm Pin=31dBm IMD [dBc] a in -20 -25 -30 -35 -40 -45 -50 -55 0.1 y r Drain Effi. 40 30 20 10 0 10 12 14 16 18 20 22 24 26 28 30 32 34 36 Input Power [dBm] 2-tone IMD vs. Tone Spacing, VDS=50V, IDS=250mA Pout=39dBm(average) Center Frequency=2.14GHz IM3 lower IM5 lower IM7 lower IM3 upper IM5 upper IM7 upper 1.0 2-tone Spacing [MHz] 10 2 EGN21A045IV High Voltage - High Power GaN-HEMT 2-Carrier IMD, Drain Efficiency and Power Gain vs. Output Power VDS=50V, IDS=250mA, f1=2.135GHz, f2=2.145GHz(10MHz Spacing) Peak/Avg. = 8.5dB@0.01% Probability(CCDF) -10 50 Drain Efficiency [%], Power Gain [dB] -15 -20 -25 IMD [dBc] -30 -35 -40 -45 -50 -55 -60 24 26 Power Gain IM3 IM5 Drain Effi. 45 40 35 30 25 20 15 10 5 0 44 -10 -15 ACLR(5MHz offset) [dBc] -20 -25 -30 -35 -40 -45 -50 -55 -60 30 32 ACLR DPD-OFF 45 40 Power Gain 35 30 25 20 15 Drain Efficiency [%], Power Gain [dB] r P ACLR DPD-ON im l e 28 30 32 34 50 10 5 0 40 42 36 a in IM7 42 38 40 y r Output Power [dBm] Drain Effi. 2-Carrier ACLR, Drain Efficiency and Power Gain vs. Output Power with DPD Operation (note VDS=50V, IDS=250mA f1=2.1375GHz, f2=2.1425GHz(5MHz Spacing) Peak/Avg. = 6.5dB@0.01% Probability(CCDF); Single Carrier Signal Note) Digital Predistortion evaluation test system: PMC-Sierra PALADIN-15 DPD chip-set 2-carrier Spectrum with DPD Operation Pave=39dBm 10dB/div DPD-OFF DPD-ON 34 36 38 Output Power [dBm] Center Frequency=2.14GHz 5MHz/div 3 EGN21A045IV High Voltage - High Power GaN-HEMT S-Parameters @VDS=50V, IDS=250mA, f=1 to 3 GHz, Zl = Zs = 50 ohm +50j +25j +100j +10j 2.1 2.2 2.1 2.2 +250j 2.0GHz 2.0GHz 0 -10j 10 50 25 -250j -25j -100j -50j +90 2.2 180 10 Scale for |S21| 2.1 2.2 r P 2.1 2.0GHz 2.0GHz im l e S11 S22 0 Freq [GHz] 1.00 1.10 1.20 1.30 1.40 1.50 1.60 1.70 1.80 1.90 2.00 2.10 2.11 2.12 2.13 2.14 2.15 2.16 2.17 2.18 2.19 2.20 2.30 2.40 2.50 2.60 2.70 2.80 2.90 3.00 a in S11 MAG 0.927 0.924 0.923 0.920 0.913 0.898 0.880 0.856 0.814 0.764 0.679 0.514 0.483 0.453 0.419 0.384 0.351 0.313 0.287 0.278 0.291 0.324 0.766 0.861 0.889 0.895 0.905 0.905 0.910 0.911 ANG 171.5 170.3 168.9 167.2 165.6 163.6 161.5 158.7 156.0 152.9 149.8 145.9 146.0 145.9 147.2 149.0 152.4 158.7 166.2 176.7 -171.0 -161.4 -163.2 -174.9 179.1 175.0 171.6 168.7 166.1 164.0 S21 MAG ANG 0.983 -17.9 0.935 -22.5 0.940 -27.3 0.989 -33.9 1.068 -40.1 1.180 -48.1 1.361 -56.3 1.667 -66.7 2.104 -80.1 2.768 -96.5 3.870 -116.5 6.067 -145.7 6.396 -150.0 6.745 -154.5 7.107 -159.1 7.474 -164.3 7.806 -169.8 8.140 -175.9 8.462 177.6 8.725 170.9 8.900 163.8 9.010 156.4 6.045 92.4 3.348 61.2 2.168 44.2 1.566 30.9 1.210 19.5 0.962 10.6 0.812 3.6 0.741 -3.4 y r S12 MAG ANG 0.004 -8.8 0.004 -14.5 0.005 -32.1 0.006 -44.4 0.006 -55.5 0.005 -54.8 0.005 -56.3 0.006 -67.2 0.007 -67.8 0.009 -78.3 0.012 -88.6 0.021 -111.2 0.022 -113.1 0.024 -116.2 0.025 -120.8 0.026 -123.0 0.027 -129.0 0.029 -134.5 0.030 -138.7 0.031 -145.7 0.032 -152.0 0.032 -158.3 0.023 150.9 0.015 126.5 0.011 111.2 0.009 99.1 0.007 86.9 0.006 81.6 0.005 80.9 0.004 101.7 S22 MAG ANG 0.931 -176.4 0.929 -178.8 0.926 179.6 0.924 178.1 0.921 177.6 0.923 175.5 0.922 173.4 0.932 171.7 0.921 170.2 0.892 167.3 0.876 161.9 0.825 150.9 0.807 149.3 0.786 147.3 0.760 145.4 0.726 143.1 0.689 141.2 0.638 139.3 0.584 137.3 0.518 136.3 0.449 137.0 0.378 139.5 0.546 -154.6 0.742 -164.3 0.830 -171.5 0.877 -175.4 0.882 -178.7 0.888 177.9 0.896 173.9 0.906 170.5 S12 0.1 Scale for |S 12| -90 S21 4 |
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