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| ADVANCED TECHNICAL INFORMATION Trench Power MOSFET ISOPLUS220TM Electrically Isolated Back Surface IXUC200N055 VDSS = 55 V ID25 = 200 A RDS(on) = 5.1 m ISOPLUS 220TM Symbol VDSS VGS ID25 ID90 IS25 IS90 ID(RMS) EAS PD TJ TJM Tstg TL VISOL FC Weight Test Conditions TJ = 25C to 150C Continuous TC = 25C; Note 1 TC = 90C, Note 1 TC = 25C; Note 1, 2 TC = 90C, Note 1, 2 Package lead current limit TC = 25C TC = 25C Maximum Ratings 55 20 200 160 200 140 45 500 300 -55 ... +175 175 -55 ... +150 V V A A A A A mJ W C C C C V~ G = Gate, S = Source * Patent pending G D S Isolated back surface* D = Drain, Features Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation l Trench MOSFET - very low RDS(on) - fast switching - usable intrinsic reverse diode l Low drain to tab capacitance(<15pF) l Unclamped Inductive Switching (UIS) rated l 1.6 mm (0.062 in.) from case for 10 s RMS leads-to-tab, 50/60 Hz, t = 1 minute Mounting force 300 2500 11 ... 65 / 2.4 ...11 N/lb 2 g Applications Automotive 42V and 12V systems - electronic switches to replace relays and fuses - choppers to replace series dropping resistors used for motors, heaters, etc. - inverters for AC drives, e.g. starter generator - DC-DC converters, e.g. 12V to 42V, etc. l Power supplies - DC - DC converters - Solar inverters l Battery powered systems - choppers or inverters for motor control in hand tools - battery chargers l Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 5.1 m m 4 20 0.2 200 V A mA nA RDS(on) VGS(th) IDSS IGSS VGS = 10 V, ID = 100 A, Note 3 VGS = 10 V, ID = ID90, Note 3 VDS = VGS, ID = 2 mA VDS = VDSS VGS = 0 V VGS = 20 VDC, VDS = 0 TJ = 25C TJ = 125C 2 4.0 Advantages l l l Easy assembly: no screws or isolation foils required Space savings High power density (c) 2000 IXYS All rights reserved 98761 (11/00) IXUC200N055 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 200 VGS = 10 V, VDS = 14 V, ID = 100 A 44 72 35 VGS = 10 V, VDS = 0.5 VDSS, ID = 50 A, RG = 4.7 115 230 155 0.5 0.30 nC nC nC ns ns ns ns K/W K/W ISOPLUS220 OUTLINE Qg(on) Qgs Qgd td(on) tr td(off) tf RthJC RthCH Source-Drain Diode Symbol VSD trr Test Conditions IF = 50 A, VGS = 0 V Note 3 Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 0.9 80 1.3 V ns Note: All terminals are solder plated. 1 - Gate 2 - Drain 3 - Source IF = 150 A, di/dt = -200 A/s, VDS = 30 V Note: 1. MOSFET chip capability 2. Intrinsic diode capability 3. Pulse test, t 300 s, duty cycle d 2 % IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 |
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