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| MITSUBISHI RF POWER MODULE M68761 SILICON MOS FET POWER AMPLIFIER, 820-851MHz, 6W, FM MOBILE RADIO OUTLINE DRAWING 42 37 30 2-R1.5 Dimensions in mm BLOCK DIAGRAM 2 3 4 1 5 6 9.6 14.7 19.7 27.4 32.4 PIN: 1 Pin : RF INPUT 2 VDD1: 1st DRAIN BIAS SUPPLY 3 VGG : GATE BIAS SUPPLY 4 VDD2: 2nd DRAIN BIAS SUPPLY 5 PO : RF OUTPUT 6 GND: FIN H15 ABSOLUTE MAXIMUM RATINGS (Tc=25C unless otherwise noted) Symbol VDD VGG Pin PO TC (OP) Tstg Parameter Supply voltage Gate bias voltage Input power Output power Operation case temperature Storage temperature Conditions ZG=ZL=50 f=820-851MHz, ZG=ZL=50 f=820-851MHz, ZG=ZL=50 f=820-851MHz, ZG=ZL=50 Ratings 17 4 10 10 -30 to +100 -40 to +100 Unit V V mW W C C Note. Above parameters are guaranteed independently. ELECTRICAL CHARACTERISTICS (Tc=25C, ZG=ZL=50 unless otherwise noted) Symbol f PO 2fO in T Frequency range Output power 2nd. harmonic Input VSWR Total efficiency Stability Load VSWR tolerance VDD=12.5V, VGG=3.5V, Pin=1mW, ZG=ZL=50 PO=6W(VGG=Adjust), VDD=12.5V, Pin=1mW(CW), ZG=ZL=50 ZG=ZL=50, VDD=10-16V, Load VSWR <4:1 VDD=15.2V, Pin=1mW, PO=6W (VGG Adjust), ZL=20:1 Parameter Test conditions Limits Min 820 6 -30 4 33 No parasitic oscillation No degradation or destroy Max 851 Unit MHz W dBc % Note. Above parameters, ratings, limits and test conditions are subject to change. Nov. 97 MITSUBISHI RF POWER MODULE M68761 SILICON MOS FET POWER AMPLIFIER, 820-851MHz, 6W, FM MOBILE RADIO TYPICAL PERFORMANCE DATA OUTPUT POWER, INPUT VSWR, TOTAL EFFICIENCY VS. FREQUENCY 10 9 8 7 6 5 VDD1=12.5V 4 VDD2=12.5V VGG=3.4V 3 Pin=1mW 2 ZG=ZL=50 1 0 0 800 810 820 830 840 850 860 870 FREQUENCY f (MHz) 0.1 0.01 0.10 PO 10.0 30 T 40 PO 10.0 50 OUTPUT POWER, TOTAL EFFICIENCY VS. INPUT POWER 100.0 100.0 T 20 1.0 in 10 f=820MHz VDD1=12.5V VDD2=12.5V VGG=3.5V ZG=ZL=50 1.00 1.0 0.1 10.00 INPUT POWER Pin (mW) OUTPUT POWER, TOTAL EFFICIENCY VS. INPUT POWER 100.0 100.0 T 10.0 PO 10.0 OUTPUT POWER, TOTAL EFFICIENCY VS. GATE SUPPLY VOLTAGE 10 f=820MHz 9 VDD1=12.5V PO 8 VDD2=12.5V Pin=1mW 7 ZG=ZL=50 6 5 4 T 100 90 80 70 60 50 40 30 20 10 1.0 f=851MHz VDD1=12.5V VDD2=12.5V VGG=3.5V ZG=ZL=50 0.10 1.00 1.0 3 2 1 0 2.00 0.1 0.01 0.1 10.00 INPUT POWER Pin (mW) 0 2.50 3.00 3.50 4.00 2.25 2.75 3.25 3.75 GATE SUPPLY VOLTAGE VGG (V) OUTPUT POWER, TOTAL EFFICIENCY VS. GATE SUPPLY VOLTAGE 10 f=851MHz 9 VDD1=12.5V 8 VDD2=12.5V PO Pin=1mW 7 ZG=ZL=50 6 5 4 3 2 1 0 2.00 2.50 3.00 3.50 T 100 90 80 70 60 50 40 30 20 10 OUTPUT POWER, TOTAL EFFICIENCY VS. DRAIN SUPPLY VOLTAGE 14 70 12 10 8 6 4 2 0 4 6 8 10 12 14 DRAIN SUPPLY VOLTAGE VDD (V) PO f=820MHz VGG=3.5V Pin=1mW ZG=ZL=50 T 60 50 40 30 20 10 0 16 2.25 2.75 3.25 3.75 GATE SUPPLY VOLTAGE VGG (V) 0 4.00 Nov. 97 MITSUBISHI RF POWER MODULE M68761 SILICON MOS FET POWER AMPLIFIER, 820-851MHz, 6W, FM MOBILE RADIO OUTPUT POWER, TOTAL EFFICIENCY VS. DRAIN SUPPLY VOLTAGE 14 70 12 10 8 6 4 2 0 4 6 8 10 12 14 DRAIN SUPPLY VOLTAGE VDD (V) PO f=851MHz VGG=3.5V Pin=1mW ZG=ZL=50 T 60 50 40 30 20 10 0 16 Nov. 97 |
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