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| RURU10060 Data Sheet January 2000 File Number 3546.3 100A, 600V Ultrafast Diode The RURU10060 is an ultrafast diode with soft recovery characteristics (trr < 80ns). It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as a freewheeling/clamping diode and rectifier in a variety of switching power supplies and other power switching applications. Its low stored charge and ultrafast recovery with soft recovery characteristic minimizes ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors. Formerly development type TA49019. Features * Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . . . <80ns * Operating Temperature. . . . . . . . . . . . . . . . . . . . . . .175oC * Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . .600V * Avalanche Energy Rated * Planar Construction Applications * Switching Power Supplies * Power Switching Circuits * General Purpose Ordering Information PART NUMBER RURU10060 PACKAGE TO-218 BRAND RURU10060 Packaging JEDEC STYLE SINGLE LEAD TO-218 NOTE: When ordering, use the entire part number. ANODE Symbol K CATHODE (FLANGE) A Absolute Maximum Ratings TC = 25oC RURU10060 UNITS V V V A 600 600 600 100 Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRRM Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRWM DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VR Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IF(AV) (TC = 70oC) Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFRM (Square Wave, 20kHz) Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFSM (Halfwave, 1 Phase, 60Hz) Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Avalanche Energy (See Figures 7 and 8) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAVL Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TSTG, TJ 200 A 1000 A 210 50 -65 to 175 W mJ oC 1 1-888-INTERSIL or 321-724-7143 | Copyright (c) Intersil Corporation 2000 RURU10060 Electrical Specifications SYMBOL VF IF = 100A IF = 100A, TC = 150oC IR VR = 600V VR = 600V, TC = 150oC trr IF = 1A, dIF/dt = 100A/s IF = 100A, dIF/dt = 100A/s ta tb RJC DEFINITIONS VF = Instantaneous forward voltage (pw = 300s, D = 2%). IR = Instantaneous reverse current. trr = Reverse recovery time summation of ta + tb . ta = Time to reach peak reverse current (See Figure 6). tb = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 6). RJC = Thermal resistance junction to case. pw = Pulse width. D = Duty cycle. IF = 100A, dIF/dt = 100A/s IF = 100A, dIF/dt = 100A/s TC = 25oC, Unless Otherwise Specified TEST CONDITION MIN TYP 45 25 MAX 1.6 1.4 250 2.0 80 100 0.71 UNITS V V A mA ns ns ns ns oC/W Typical Performance Curves 500 IR, REVERSE CURRENT (A) 1000 175oC IF, FORWARD CURRENT (A) 100 100oC 100 175oC 10 25oC 10 1 100oC 0.1 25oC 0.01 0 100 200 300 400 500 600 1 0 0.5 1 1.5 2 2.5 VF, FORWARD VOLTAGE (V) VR , REVERSE VOLTAGE (V) FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE 2 RURU10060 Typical Performance Curves 100 TC = 25oC, dIF/dt = 100A/s t, RECOVERY TIMES (ns) 80 (Continued) IF(AV) , AVERAGE FORWARD CURRENT (A) 100 80 DC 60 trr 60 SQ. WAVE 40 ta tb 40 20 20 0 1 10 IF, FORWARD CURRENT (A) 100 0 25 50 75 100 125 150 175 TC , CASE TEMPERATURE (oC) FIGURE 3. trr, ta AND tb CURVES vs FORWARD CURRENT FIGURE 4. CURRENT DERATING CURVE Test Circuits and Waveforms VGE AMPLITUDE AND RG CONTROL dIF/dt t1 AND t2 CONTROL IF L DUT RG VGE t1 t2 CURRENT SENSE + VDD 0 IF dIF dt ta trr tb IGBT - 0.25 IRM IRM FIGURE 5. trr TEST CIRCUIT I = 1.6A L = 40mH R < 0.1 EAVL = 1/2LI2 [VR(AVL) /(VR(AVL) - VDD)] Q1 = IGBT (BVCES > DUT VR(AVL)) L CURRENT SENSE Q1 VDD DUT R + VDD IV FIGURE 6. trr WAVEFORMS AND DEFINITIONS VAVL IL IL t0 t1 t2 t FIGURE 7. AVALANCHE ENERGY TEST CIRCUIT FIGURE 8. AVALANCHE CURRENT AND VOLTAGE WAVEFORMS All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site www.intersil.com 3 |
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