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FDD603AL
July 1999
FDD603AL
N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
This N-Channel logic level enhancement mode power field effect transistor is produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize onstate resistance. These devices are particularly suited for low voltage applications such as DC/DC converters and high efficiency switching circuits where fast switching, low in-line power loss, and resistance to transients are needed.
Features
33 A, 30 V. RDS(ON) = 0.023 @ VGS = 10 V RDS(ON) = 0.037 @ VGS = 4.5 V.

Critical DC electrical parameters specified at elevated temperature. Rugged avalanche-rated internal source-drain diode can eliminate the need for external Zener Diode. High density cell design for extremely low RDS(ON) .
Applications
DC/DC converters Motor drives
D
D G S
TO-252
Absolute Maximum Ratings
Symbol
V DSS V GSS ID Drain-Source Voltage Gate-Source Voltage Maximum Drain Current - Continuous Maximum Drain Current PD T A = 25C -Pulsed T A = 25 o C T A = 25 o C T J, T stg
(Note 1) (Note 1a) T C =25 oC unless otherwise noted
G
S
Parameter
Ratings
30 20 33 9.5 80
(Note 1) (Note 1a) (Note 1b)
Units
V V A
Maximum Power Dissipation @ T C = 25 o C
39 3.2 1.3 -55 to +150
W
Operating and Storage Junction Temperature Range
C
Thermal Characteristics
R JC R JA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
(Note 1) (Note 1a) (Note 1b)
2.5 40 96
C/W C/W C/W
Package Marking and Ordering Information
Device Marking FDD603AL
1999 Fairchild Semiconductor Corporation
Device FDD603AL
Reel Size 13''
Tape W idth 16mm
Quantity 2500
FDD603AL, Rev. B
FDD603AL
Electrical Characteristics
Symbol
W DSS IAR BVDSS BVDSS TJ IDSS IGSSF IGSSR
TA = 25C unless otherwise noted
Parameter
Test Conditions
Min
Typ
Max Units
100 12 mJ A V mV/C 10 100 -100 A nA nA
Off Characteristics
Single Pulse Drain-Source VDD = 15 V, ID = 12 A Avalanche Energy Maximum Drain-Source Avalanche Current Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse
(Note 2)
VGS = 0 V, ID = 250 A ID = 250A, Referenced to 25C VDS = 24 V, VGS = 0 V VGS = 20V, VDS = 0 V VGS = -20 V, VDS = 0 V
30 32
On Characteristics
VGS(th) VGS(th) TJ RDS(on)
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance
VDS = VGS, ID = 250 A ID = 250 A,Referenced to 25C VGS = 10 V, ID = 9.5 A VGS = 10 V, ID = 9.5 A,TJ=125C VGS = 4.5 V, ID = 7.5 A VGS = 10 V, VDS = 10 V VDS = 10 V, ID = 9.5 A
1
1.7 -4.5 0.016 0.024 0.026
3
V mV/C
0.023 0.035 0.037
ID(on) gFS
60 18
A S
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance
(Note 2)
VDS = 15 V, VGS = 0 V f = 1.0 MHz
670 345 95
pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
VDD = 15 V, ID = 1 A VGS = 10 V, RGEN = 6
10 16 27 12
20 30 45 22 26
ns ns ns ns nC nC nC
VDS =10 V, ID = 9.5 A VGS = 10 V,
19 3.5 5.5
Drain-Source Diode Characteristics and Maximum Ratings
IS VSD Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS = 0 V, IS = 2.3 A
( Note 1) (Note 2)
33 0.78 1.2
A V
Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the drain tab. RJC is guaranteed by design while RCA is determined by the user's board design. RJC has been used to determine some maximum ratings.
a) RJA= 40oC/W when mounted on a 1in2 pad of 2oz copper.
b) RJA= 96oC/W on a minimum mounting pad.
Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%
FDD603AL, Rev. B
FDD603AL
Typical Characteristics
80 I D , DRAIN-SOURCE CURRENT (A)
3
GS
RDS(ON) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE
V
=10V
8.0 7.0 6.0
V
2.5
GS
= 4.0V 4.5
60
5.0
40
2
5.0 6.0 7.0 8.0 10
4.5
20
1.5
4.0 3.0
1
0 0 1 V
DS
0.5
2
3
4
5
0
20
40 I D , DRAIN CURRENT (A)
60
80
, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
0.1
R DS(ON) , ON-RESISTANCE (OHM)
1.8 DRAIN-SOURCE ON-RESISTANCE 1.6 1.4 1.2 1 0.8 0.6 -50
R DS(ON) , NORMALIZED
I D = 9.5A V GS = 10V
I D = 5A
0.08
0.06
0.04
TJ = 125C
0.02
25C
0 2 4 6 8 V GS , GATE TO SOURCE VOLTAGE (V) 10
-25
0
25
50
75
100
125
150
T J, JUNCTION TEMPERATURE (C)
Figure 3. On-Resistance Variation with Temperature.
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
30
I S , REVERSE DRAIN CURRENT (A)
20
VDS = 10V
I D, DRAIN CURRENT (A) 25 20 15 10
VGS = 0V TJ = 125C
1
25C
0.1
-55C
0.01
T = 125C J
5
25C -55C
0.001
0 1 2 3 4 5 V GS , GATE TO SOURCE VOLTAGE (V)
0.0001 0 0.2 0.4 0.6 0.8 1 1.2 VSD , BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDD603AL, Rev. B
FDD603AL
Typical Characteristics
(continued)
10 VGS , GATE-SOURCE VOLTAGE (V)
2000
I D = 10A
8
CAPACITANCE (pF)
VDS = 5.0V 10V 20V
1000
Ciss
500
6
Coss
200
4
2
100 60 0.1
f = 1 MHz VGS = 0V
0.3 1 4 10
Crss
0 0 5 10 Q g , GATE CHARGE (nC) 15 20
30
V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate-Charge Characteristics.
Figure 8. Capacitance Characteristics.
200 100 50 I D , DRAIN CURRENT (A) 20 5 1
R
60
) (ON DS
it Lim
1 s 10 s 10 0 s 1m s
10 ms
DC
SINGLE PULSE RJA = 96 C/W TA = 25 C POWER (W) 40
o o
0.1
VGS = 10V SINGLE PULSE o RJC = 3.2 C/W T A = 25 C
1 3
20
0.01 0.1
0
5
10
30
50
0.01
0.1
1
10
100
1000
V DS , DRAIN-SOURCE VOLTAGE (V))
SINGLE PULSE TIME (SEC)
Figure 9. Maximum Safe Operating Area.
1 TRANSIENT THERMAL RESISTANCE
D = 0.5 0.2 r(t), NORMALIZED EFFECTIVE
Figure 10. Single Pulse Maximum Power Dissipation.
0.1
0.1 0.05 0.02
R JA (t) = r(t) * R JA R JA = 96C/W
0.01 Single Pulse P(pk)
0.01
t1
t2
0.001
TJ - TA = P * R JA (t) Duty Cycle, D = t 1 / t 2
0.0001 0.0001
0.001
0.01
0.1 t , TIME (sec) 1
1
10
100
300
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b. Transient themal response will change depending on the circuit board design.
FDD603AL, Rev. B
TO-252 Tape and Reel Data and Package Dimensions
D-PAK (TO-252) Packaging Configuration: Figure 1.0
Packaging Description:
EL ECT ROST AT IC SEN SIT IVE DEVICES
DO NO T SHI P OR STO RE N EAR ST RO NG EL ECT ROST AT IC EL ECT RO M AGN ETI C, M AG NET IC O R R ADIO ACT IVE FI ELD S
TNR D ATE PT NUMB ER PEEL STREN GTH MIN ___ __ ____ __ ___gms MAX ___ ___ ___ ___ _ gms
Antistatic Cover Tape
ESD Label
TO-252 parts are shipped in tape. The carrier tape is made from a dissipative (carbon filled) polycarbonate resin. The cover tape is a multilayer film (Heat Activated Adhesive in nature) primarily composed of polyester film, adhesive layer, sealant, and anti-static sprayed agent. These reeled parts in standard option are shipped with 2500 units per 13" or 330cm diameter reel. The reels are dark blue in color and is made of polystyrene plastic (antistatic coated). This and some other options are further described in the Packaging Information table. These full reels are individually barcode labeled and placed inside a standard intermediate box (illustrated in figure 1.0) made of recyclable corrugated brown paper. One box contains two reels maximum. And these boxes are placed inside a barcode labeled shipping box which comes in different sizes depending on the number of parts shipped.
Static Dissipative Embossed Carrier Tape
F63TNR Label
D-PAK (TO-252) Packaging Information Packaging Option Packaging type Qty per Reel/Tube/Bag Reel Size Box Dimension (mm) Max qty per Box Weight per unit (gm) Weight per Reel(kg) Note/Comments Standard (no flow code) TNR 2,500 13" Dia 359x359x57 5,000 0.300 1.200
D-PAK (TO-252) Unit Orientation
359mm x 359mm x 57mm Standard Intermediate box ESD Label
F63TNR Label sample
F63TNR Label
LOT: CBVK741B019 FSID: FDD6680 QTY: 2500 SPEC:
D/C1: Z9942 D/C2:
QTY1: QTY2:
SPEC REV: CPN: N/F: F
(F63TNR)3
TO-252 (D-PAK) Tape Leader and Trailer Configuration: Figure 2.0
Carrier Tape Cover Tape
Components Trailer Tape 640mm minimum or 80 empty pockets Leader Tape 1680mm minimum or 210 empty pockets
FZ9935 FDD 6680
FZ9935 FDD 6680
FZ9935 FDD 6680
FZ9935 FDD 6680
July 1999, Rev. A
TO-252 Tape and Reel Data and Package Dimensions
D-PAK (TO-252) Embossed Carrier Tape Configuration: Figure 3.0
T E1
P0
D0
F K0 Wc B0 E2 W
Tc A0 P1 D1
User Direction of Feed
Dimensions are in millimeter Pkg type TO252 (24mm)
A0
6.90 +/-0.10
B0
10.50 +/-0.10
W
16.0 +/-0.3
D0
1.55 +/-0.05
D1
1.5 +/-0.10
E1
1.75 +/-0.10
E2
14.25 min
F
7.50 +/-0.10
P1
8.0 +/-0.1
P0
4.0 +/-0.1
K0
2.65 +/-0.10
T
0.30 +/-0.05
Wc
13.0 +/-0.3
Tc
0.06 +/-0.02
Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481 rotational and lateral movement requirements (see sketches A, B, and C).
10 deg maximum Typical component cavity center line
0.9mm maximum
B0 10 deg maximum component rotation
0.9mm maximum
Sketch A (Side or Front Sectional View)
Component Rotation
A0 Sketch B (Top View)
Typical component center line
Sketch C (Top View)
Component lateral movement
D-PAK (TO-252) Reel Configuration: Figure 4.0
Component Rotation
W1 Measured at Hub
Dim A Max
B Min Dim C
Dim A max
Dim N
Dim D min
DETAIL AA See detail AA W3
13" Diameter Option
W2 max Measured at Hub
Dimensions are in inches and millimeters
Tape Size
164mm
Reel Option
13" Dia
Dim A
13.00 330
Dim B
0.059 1.5
Dim C
512 +0.020/-0.008 13 +0.5/-0.2
Dim D
0.795 20.2
Dim N
4.00 100
Dim W1
0.646 +0.078/-0.000 16.4 +2/0
Dim W2
0.882 22.4
Dim W3 (LSL-USL)
0.626 - 0.764 15.9 - 19.4
July 1999, Rev. A
TO-252 Tape and Reel Data and Package Dimensions
TO-252 (FS PKG Code AA)
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in: inches [millimeters]
Part Weight per unit (gram): 0.300
September 1999, Rev. A
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No Identification Needed
Full Production
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This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

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