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 2.5Gb/s GaAs Laser Driver
FEATURES
* * * * * * * * Operation DC to 2.5Gbit/s, NRZ Modulation Current Drive Only Capability to Drive Direct Modulation Laser and MI-Laser Maximum Peak Current of 80mA Typical@RL = 24 Peak-to-Peak Output Voltage, Min: 3V@RL = 50 Single-ended or Differential ECL Input Single-5.2V Power Supply Small Outline Package similar to SSOP-16
FMM3193VI
DESCRIPTION
The FMM3193VI GaAs Laser Driver is a high-rate driver circuit designed for fiber optic transmitters operating at NRZ data rates up to 2.5Gbit/s. The FMM3193VI is capable of driving high-power Laser diodes at peak current up to 80mA typically, and driving MI-Laser at peak-to-peak voltage of 3V. The FMM3193VI outputs only modulation current, and an external bias current circuit is required. This driver is assembled in a small outline ceramic package having a similar footprint to SSOP-16. ABSOLUTE MAXIMUM RATINGS (VDD = 0V,Ta=25C)
Parameter Supply Voltage Input Voltage Power Supply Current Peak Current Control Voltage Output Voltage* Storage Temperature
(*) Applied in less than 10 min.
Symbol VSS VIN ISS VIP Vout, Vout Tstg
Ratings -7.0 to 0 VSS to 0 300 VSS -2.0 to VSS +1.2 -3.1 to +0.6 -55 to 125
Unit V V mA V V C
Direct Modulation Laser Application
ELECTRICAL CHARACTERISTICS (Unless otherwise specified, Tc=25C, VSS=-5.2V)
Parameter Maximum Data Rate Maximum Peak Current (OUT) Output Voltage (OUT) Leakage Current (OUT) Power Supply Current Rise Time Fall Time Reference Voltage IP Vout IPDH Iss tr tf Vref Symbol Test Conditions NRZ VIP = -4.1V, DIN = "HIGH", RL = 25 VIP = -4.1V, DIN = "HIGH", RL = 50 VIP = -4.1V, DIN = "LOW" VIP = -5.2V 20% to 80% 20% to 80% Duty 50% Min. 2.5 60 -1.4 Limit Typ. Max. 80 100 120 120 -3.0 4 145 160 160 -1.2 Unit Gbps mA V mA mA ps ps V
Edition 1.1 June 2000
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FMM3193VI
Parameter Symbol Test Condition Tc = 0C Minimum Peak Current (OUT) IPmin VIP = -5.2V DIN = "HIGH" Tc = 25C Tc = 70C Min. -
2.5Gb/s GaAs Laser Driver
Limit Typ. Max. 3.5 4.0 10.5 mA Unit
ELECTRICAL CHARACTERISTICS (Unless otherwise specified, Tc=25C, VSS=-5.2V)
MI-Laser Application
ELECTRICAL CHARACTERISTICS (Unless otherwise specified, Tc=25C, VSS=-5.2V)
Parameter Maximum Data Rate Maximum Peak Current (OUT) Output Voltage (OUT) Leakage Current (OUT) Power Supply Current Rise Time Fall Time Reference Voltage IP Vout IPDH Iss tr tf Vref Symbol Test Conditions NRZ VIP = -4.1V, DIN = "LOW", RL = 25 VIP = -4.1V, DIN = "LOW", RL = 50 VIP = -4.1V, DIN = "HIGH" VIP = -5.2V 20% to 80% 20% to 80% Duty 50% Tc = 0C Minimum Peak Current (OUT) IPmin VIP = -5.2V Tc = DIN = "LOW" 25C Tc = 70C Min. 2.5 60 -1.4 Limit Typ. Max. 80 100 120 120 -3.0 4 145 160 160 -1.2 3.5 4.0 10.5 mA Unit Gbps mA V mA mA ps ps V
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2.5Gb/s GaAs Laser Driver
RECOMMENDED OPERATING CONDITIONS
Parameter Supply Voltage HIGH Level Input Voltage LOW Level Input Voltage Peak Current Control Voltage Operating Temperature* Symbol VSS VIH VIL VIP Vref = -1.3V Vref = -1.3V Test Conditions Min. -5.46 -1.0 VSS 0
FMM3193VI
Limit Typ. Max. -5.2 -0.9 -1.7 -4.94 -1.6 VSS +1.1 +85 Unit V V V V C
FMM3193VI Block Diagram
Direct Modulation Laser
MI-Laser
20-30
30
50
VDD
OUT DIN
OUT
Vref
Drive Circuit VIP VSS Ipmon(VSS)
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FMM3193VI
Test Circuit
2.5Gb/s GaAs Laser Driver
C1
VSS A
C1
R2 R3 C1 2 3 Pulse Pattern Generator 4 R1 5 6 R4 7 8 NC NC NC NC 10 9 C1: 0.33F C2: 0.068F R1: 50 R2: 500 R3: 0~1k R4: 0~5k VDD Vref OUT OUT 12 11 VSS NC DIN NC NC NC 15 14 13 20dB ATTN ATTN 20dB R1 R1 Sampling Oscilloscope C2 1 VIP Ipmon (VSS) 16
Peak Current Control Voltage vs. Peak Current 100
VSS = -5.20V Vref = 1.30V Tc = 25 RL = 50 RL = 20~30
80 60
IP (mA)
40
20
0 -5.5
-5.0 VIP (V)
-4.5
-4.0
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2.5Gb/s GaAs Laser Driver
FMM3193VI Pin Assignment
Ipmon (VSS)
FMM3193VI
OUT
OUT
NC
NC
NC
NC
NC
16
9
Top View
1
DIN VIP NC VDD Vref VSS NC NC
8
Pin Description
Pin Name VIP VSS NC DIN VDD Vref NC NC Pin No. 1 2 3 4 5 6 7 8 Description Peak Current Control Voltage Supply Voltage No Connection Data Input Ground Reference Voltage No Connection No Connection Pin Name NC NC OUT OUT NC NC NC Ipmon(VSS) Pin No. 9 10 11 12 13 14 15 16 Description No Connection No Connection Output Complimentary Output No Connection No Connection No Connection Peak Current Monitor
Ground Pin - Ground\ Heat Sink - Ground Note: NC pins should be connected to the ground.
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FMM3193VI
"VI" PACKAGE
5.6 0.7 0.18
2.5Gb/s GaAs Laser Driver
Case Style "VI"
UNIT: mm
(0.45)
16
9
(0.25)
(0.9)
Heat Sink 2.8) (3.1) (3.6) (3.9) 5.0
(2.0)
6.4
0.1
Ground Pin
(0.4)
1
8
0.65 4.55 5.5
0.7
0.15 1.2
0.13 M
(3.2) (3.3)
Unit: mm
For further information please contact:
FUJITSU COMPOUND SEMICONDUCTOR, INC. Americas & R.O.W.
2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111
CAUTION
Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures:
www.fcsi.fujitsu.com
* Do not put this product into the mouth. * Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. * Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures.
FME, QDD
Fujitsu Microelectronics Europe GmbH Quantum Devices Division Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ United Kingdom TEL: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888
FUJITSU QUANTUM DEVICES LIMITED
Global Business Division Global Sales Support Department Shinjuku Daiichiseimei Building, 2-7-1 Nishishinjuku, Shinjuku-ku, Tokyo, 163-0721, Japan TEL: +81-3-5322-3356 FAX: +81-3-5322-3398
FUJITSU QUANTUM DEVICES SINGAPORE PTE LTD. Hong Kong Branch
Rm. 1101, Ocean Centre, 5 Canton Rd. Tsim Sha Tsui, Kowloon, Hong Kong TEL: +852-23770226 FAX: +852-23763269
Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others.
(c) 2000 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0200M200
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