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Datasheet File OCR Text: |
Preliminary Data Sheet PD-20609 11/98 HF51C120ACE Hexfred Die in Wafer Form 1200 V Size 51 5" Wafer Electrical Characteristics ( Wafer Form ) Parameter V FM BV R IRM Description Forward Voltage Reverse Breakdown Voltage Reverse Leakage Current Guaranteed (Min/Max) 3V Max. 1200V Min. 20A Max. Test Conditions TJ = 25C, IF = 16A TJ = 25C, IR = 200A TJ = 25C, VR = 1200V Mechanical Data Nominal Back Metal Composition, Thickness Nominal Front Metal Composition, Thickness Chip Dimensions Wafer Diameter Wafer Thickness Relevant Die Mechanical Dwg. Number Minimum Street Width Reject Ink Dot Size Recommended Storage Environment Cr-Ni-Ag ( 1kA-4kA-6kA ) 99% Al, 1% Si (3 microns) 0.340" x 0.195" 125mm, with std. < 100 > flat .015" .003" 01-5172 100 Microns 0.25mm Diameter Minimum Store in original container, in dessicated nitrogen, with no contamination Reference Standard IR packaged part ( for design ) : HFA30PB120 Die Outline NOTES : 1. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ) 2. CONTROLLING DIMENSION : ( INCH ) 3. DIMENSIONAL TOLERANCES : BONDING PADS : < 0.635 TOLERANCE = 0.013 WIDTH < (.0250) TOLERANCE = (.0005) & > 0.635 TOLERANCE = 0.025 LENGTH > (.0250) TOLERANCE = (.0010) OVERALLDIE < 1.270 TOLRANCE = 0.102 WIDTH < (.050) TOLERANCE = (.004) & > 1.270 TOLERANCE = 0.203 LENGTH > (.050) TOLERANCE = (.008) |
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