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| EW N IL350T/351T/358T/359T HIGH PERFORMANCE LINEAR OPTOCOUPLER for Optical DAA in Telecommunications Preliminary Data Sheet FEATURES * 2 mm High SMT Package * High Sensitivity (K1) at Low Operating LED Current * Couples AC and DC Signals * Low Input-Output Capacitance * Isolation Voltage, 2500 VRMS * Low Distortion * Available in Tape and Reel (suffix T) Package Dimensions in Inches (mm) K1 A2 .224 (5.7) .346 (8.79) .326 (8.3) .216 (5.5) K3 Pin One ID A4 .230 (5.84) .224 (5.69) .017 (.43) .013 (.33) .047 (1.19) .037 (.94) .083 (2.1) .075 (1.9) 40 3-7 5 N.C 8K 7A 6 N.C APPLICATIONS * Optical DAA for V.34 FAX/Modem PCMCIA Cards * Digital Telephone Line Isolation .301 (7.65) .281 (7.14) DESCRIPTION The IL350T/1T/8T/9T family of Linear Optocou.040 (1.02) .036 (.91) pler consist of an IRLED optically coupled to .016 .006 .050 two photodiodes. The emitter mechanically (.41) (.15) (1.27) Typ. faces both diodes enabling them to receive Typ. approximately an equal amount of infrared light. The diodes produce a proportional amount of photocurrents. The ratio of the phoAbsolute Maximum Ratings tocurrents stays constant with high accuracy when either the LED current changes or Emitter the Sym Min. ambient temperature changes. Thus one can Reverse Voltage V R control the output diode current optically by Forward Current controlling the input photodiode current. FI The IL350T/1T/8T/9T optocouplers can beSurge Current Pulse s used with the aid of operational amplifiers inWidth <10 closed loop conditions to achieve highly linear Power Dissipation, T A =25C and electrically isolated AC and or DC Dearate Linearly from 25 signal C amplifiers. Junction Temperature Detector (each) Reverse Voltage Power Dissipation Derate Linearly from 25 C Junction Temperature Coupler Isolation Test Voltage Derate Linearly from 25 C Storage Temperature Operating Temperature Lead Soldering Time at 260 C Isolation Resistance C VIO=500 V, TA=25 VIO=500 V, TA=100 C 1012 1011 S OP ISOL J R 10 Typ. All 8 sides Max. 3 30 150 150 2 Units V mA mA mW mW/ C C I PK P LED J T 100 V P T 15 50 0.65 100 V mW mW/C C V Pt 2500 2.8 V RMS 250 mW/C C C 10 sec. mW Total Package Power Dissipation T T - 40 0 150 75 Semiconductor Group 4-19 10.95 This document was created with FrameMaker 4.0.3 Electrical Characteristics (TA=25C) LED Emitter Forward Voltage Reverse Current VF Temperature Coefficient Junction Capacitance Dynamic Resistance Switching Time IL358T/9T Symbol FV RI Min. Typ. 1.8 .01 -2.2 TBD 6 40 40 Max. 2.1 10 Units V A mV/ C pF ns ns Test Conditions I F=10 mA V R =3 V V F=0 V, f=1 MHz I =2.5 mA F I =1 mA F VF/ C J C VF/ F I F t t R Detector Junction Capacitance NEP AC Characteristics Photovoltaic Mode Frequency Response 9T Phase Response Rise Time Package Input-Output Capacitance Common Mode Capacitance Coupled Characteristics IO J C 12 <4-14 pF W/Hz V=0 V, f=1 MHz F VDET =0 V IL358T/ BW(-3dB) 1.0 45 350 MHz Deg. ns I =25 A P1 Modulation current IP1= 6 A C 1 0.5 pF pF VF=0 V, f=1 MHz V=0 V, f=1 MHz F C cm K1 at IF=2 mA, VD=0 V Min. IL350T IL351T IL358T IL359T Bin Table Bin A B C D E F G H I J Min. 0.557 0.620 0.690 0.765 0.851 0.945 1.051 1.169 1.297 1.442 Max. 0.626 0.696 0.773 0.859 0.955 1.061 1.181 1.311 1.456 1.618 0.003 0.005 0.008 0.008 Typ. Max. K3 Bins A-J D, E, F, G D, E, F, G E, F I L350T/351T/358T/359T Semiconductor Group 4-20 |
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