 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| PD - 94267 HEXFET(R) POWER MOSFET SURFACE MOUNT (SMD-1) IRF5N3415 150V, N-CHANNEL Product Summary Part Number IRF5N3415 BVDSS 150V RDS(on) ID 0.042 37.5A Fifth Generation HEXFET(R) power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. These devices are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits. SMD-1 Features: n n n n n n n Low RDS(on) Avalanche Energy Ratings Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 10V, TC = 25C ID @ VGS = 10V, TC = 100C IDM PD @ TC = 25C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Package Mounting Surface Temp. Weight 37.5 22 150 125 1.0 20 210 22 12.5 3.0 -55 to 150 300 (for 5s) 2.6 (Typical) Units A W W/C V mJ A mJ V/ns o C g For footnotes refer to the last page www.irf.com 1 06/19/01 IRF5N3415 Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified) Parameter BVDSS Drain-to-Source Breakdown Voltage BV DSS/T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current Min 150 -- -- 2.0 19 -- -- -- -- -- -- -- -- -- -- -- -- Typ Max Units -- 0.18 -- -- -- -- -- -- -- -- -- -- -- -- -- -- 4.0 -- -- 0.042 4.0 -- 25 250 100 -100 200 17 98 20 110 75 110 -- V V/C V S( ) A Test Conditions VGS = 0V, ID = 250A Reference to 25C, ID = 1.0mA VGS = 10V, ID = 22A VDS = VGS, ID = 250A VDS =15V, IDS = 22A VDS = 150V ,VGS=0V VDS = 120V, VGS = 0V, TJ =125C VGS =-20V VGS = -20V VGS =10V, ID = 22A VDS = 120V VDD = 75V, ID = 22A, VGS = 10V, RG = 2.5 IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD l Ciss C oss C rss Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance nA nC ns nH Measured from the center of drain pad to the center of source pad VGS = 0V, VDS = 25V f = 1.0MHz Input Capacitance Output Capacitance Reverse Transfer Capacitance -- -- -- 2700 560 280 -- -- -- pF Source-Drain Diode Ratings and Characteristics Parameter IS ISM VSD t rr QRR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min Typ Max Units -- -- -- -- -- -- -- -- -- -- 37.5 150 1.3 390 3.3 Test Conditions A V ns C Tj = 25C, IS = 22A, VGS = 0V Tj = 25C, IF = 22A, di/dt 100A/s VDD 50V Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance Parameter RthJC Junction-to-Case Min Typ Max Units -- -- 1.0 C/W Test Conditions Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page 2 www.irf.com IRF5N3415 1000 I D , Drain-to-Source Current (A) 100 I D , Drain-to-Source Current (A) VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 1000 100 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 4.5V 10 4.5V 10 1 0.1 20s PULSE WIDTH T = 25 C J 1 10 100 1 0.1 20s PULSE WIDTH T = 150 C J 1 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 2.5 R DS(on) , Drain-to-Source On Resistance (Normalized) ID = 37.5A I D , Drain-to-Source Current (A) 2.0 TJ = 25 C 1.5 100 TJ = 150 C 1.0 0.5 10 4.0 15 V DS = 50V 20s PULSE WIDTH 7.0 8.0 5.0 6.0 9.0 VGS , Gate-to-Source Voltage (V) 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF5N3415 6000 5000 VGS , Gate-to-Source Voltage (V) VGS = Ciss = Crss = Coss = 0V, f = 1MHz Cgs + Cgd , Cds SHORTED Cgd Cds + Cgd 20 ID = 22A 16 VDS = 120V VDS = 75V VDS = 30V C, Capacitance (pF) 4000 Ciss 3000 12 8 2000 C oss C rss 1000 4 0 1 10 100 0 0 40 80 FOR TEST CIRCUIT SEE FIGURE 13 120 160 200 VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) ISD , Reverse Drain Current (A) 100 TJ = 150 C 10 TJ = 25 C 1 ID, Drain-to-Source Current (A) 100 10 Tc = 25C Tj = 150C Single Pulse 1 1 10 100 1000 VDS , Drain-toSource Voltage (V) 1ms 10ms 0.1 0.2 V GS = 0 V 0.6 1.0 1.4 VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRF5N3415 40 V DS VGS RD D.U.T. + I D , Drain Current (A) 30 RG -V DD VGS 20 Pulse Width 1 s Duty Factor 0.1 % 10 Fig 10a. Switching Time Test Circuit VDS 90% 0 25 50 75 100 125 150 TC , Case Temperature ( C) 10% VGS td(on) tr t d(off) tf Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10b. Switching Time Waveforms 10 Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.10 0.1 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) 0.0001 0.001 0.01 0.01 0.00001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.1 PDM t1 t2 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRF5N3415 400 EAS , Single Pulse Avalanche Energy (mJ) 1 5V 300 TOP BOTTOM ID 10A 14A 22A VD S L D R IV E R RG D .U .T. IA S 200 + V - DD A VGS 20V tp 0 .0 1 100 Fig 12a. Unclamped Inductive Test Circuit V (B R )D S S tp 0 25 50 75 100 125 150 Starting TJ , Junction Temperature ( C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50K 12V .2F .3F QG 10V QGS VG QGD VGS 3mA D.U.T. + V - DS IG ID Charge Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit 6 www.irf.com IRF5N3415 Footnotes: Repetitive Rating; Pulse width limited by maximum junction temperature. VDD = 25 V, Starting TJ = 25C, L= 0.87mH Peak IAS = 22A, VGS = 10V, RG= 25 ISD 22A, di/dt 100 A/s, Pulse width 300 s; Duty Cycle 2% VDD 150V, TJ 150C Case Outline and Dimensions -- SMD-1 PAD ASSIGNMENTS IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 06/01 www.irf.com 7 |
Price & Availability of IRF5N3415
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |