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MBR2535CT - MBR2560CT Discrete POWER & Signal Technologies MBR2535CT - MBR2560CT Features * * * * * * Low power loss, high efficiency. High surge capacity. For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. Metal silicon junction, majority carrier conduction. High current capacity, low forward voltage drop. Guard ring for over voltage protection. 0.113(2.87) 0.103(2.62) 0.27(6.86) 0.23(5.84) 0.412(10.5) MAX 0.154(3.91) 0.148(3.74) 0.185(4.70) 0.175(4.44) 0.055(1.40) 0.045(1.14) 0.594(15.1) 0.587(14.9) TO-220AB 1 0.16(4.06) 0.14(3.56) 2 3 0.11(2.79) 0.10(2.54) PIN 1 + PIN 3 CASE PIN 2 0.037(0.94) 0.027(0.68) 0.56(14.22) 0.53(13.46) 30 Ampere Schottky Barrier Rectifiers Absolute Maximum Ratings* Symbol IO if(repetitive) if(surge) PD RJA RJL Tstg TJ TA = 25C unless otherwise noted 0.025(0.64) 0.105(2.67) 0.095(2.41) 0.014(0.35) Dimensions are in: inches (mm) Parameter Average Rectified Current .375 " lead length @ TA = 130C Peak Repetitive Forward Current (Rated VR , Square Wave, 20 KHz) @ TA = 130C Peak Forward Surge Current 8.3 ms single half-sine-wave Superimposed on rated load (JEDEC method) Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Lead Storage Temperature Range Operating Junction Temperature Value 30 Units A 30 150 2.0 16.6 60 1.5 -65 to +175 -65 to +150 A A W mW/C C/W C/W C C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Electrical Characteristics Parameter TA = 25C unless otherwise noted Device 2535CT 2545CT 45 31 45 10,000 0.2 40 0.82 0.73 1.0 1.0 50 0.75 0.65 0.5 2550CT 50 35 50 2560CT 60 42 60 35 24 35 Units V V V V/uS mA mA V V V V A Peak Repetitive Reverse Voltage Maximum RMS Voltage DC Reverse Voltage (Rated VR) Voltage Rate of Change (Rated VR) Maximum Reverse Current TA = 25C @ rated VR TA = 125C Maximum Forward Voltage IF = 15 A, TC = 25C IF = 15 A, TC = 125C IF = 30 A, TC = 25C IF = 30 A, TC = 125C Peak Repetitive Reverse Surge Current 2.0 us Pulse Width, f = 1.0 KHz (c)1999 Fairchild Semiconductor Corporation MBR2535CT - MBR2560CT, Rev. A MBR2535CT - MBR2560CT Schotty Barrier Rectifier (continued) Typical Characteristics Forward Current Derating Curve PEAK FORWARD SURGE CURRENT (A) 30 FORWARD CURRENT (A) 150 125 100 75 50 25 0 Non-Repetitive Surge Current 24 18 SINGLE PHASE HALF WAVE 60HZ RESISTIVE OR INDUCTIVE LOAD .375" (9.00mm) LOAD LENGTHS 12 6 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE ( C) 175 1 2 5 10 20 50 NUMBER OF CYCLES AT 60Hz 100 Forward Characteristics 50 10 MBR2550CT-MBR2560CT Reverse Characteristics 50 REVERSE CURRENT (mA) MBR2535CT-MBR2545CT FORWARD CURRENT (A) T A = 150 C TA = 25 C 10 T A = 125 C MBR2550CT-MBR2560CT 1 1 MBR2535CT-MBR2545CT TA = 75 C 0.1 MBR2535CT-MBR2545CT 0.1 Pulse Width = 300S 2% Duty Cycle 0.01 TA = 25 C MBR2550CT-MBR2560CT 0.01 0 0.2 0.4 0.6 0.8 FORWARD VOLTAGE (V) 1 1.2 0.001 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) TRANSIENT THERMAL IMPEDANCE ( C/W) Typical Junction Capacitance 5000 JUNCTION CAPACITANCE (pF) Transient Thermal Impedance 100 2000 MBR2535CT-MBR2545CT 10 1000 MBR2550CT-MBR2560CT 500 1 200 100 0.1 1 10 REVERSE VOLTAGE (V) 100 0.1 0.01 0.1 1 10 T. PULSE DURATION (sec.) 100 MBR2535CT - MBR2560CT, Rev. A TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM CoolFETTM CROSSVOLTTM E2CMOSTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM GTOTM HiSeCTM DISCLAIMER ISOPLANARTM MICROWIRETM POPTM PowerTrenchTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 TinyLogicTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. |
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