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| NTE2404 (NPN) & NTE2405 (PNP) Silicon Complementary Transistors Darlington, General Purpose Description: The NTE2404 (NPN) and NTE2405 (PNP) are silicon complementary Darlington transistors in an SOT-23 type surface mount case designed for general-purpose applications. Absolute Maximum Ratings: Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mA Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800mA Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA Total Power Dissipation (TA = +25C, Note 1), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350mW Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +150C Thermal Resistance, Junction to Ambient (Note 1), RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350K/W Note 1. Mounted on a ceramic substrate of .590 (15mm) x .590 (15mm) x .027 (0.7mm). Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Collector-Base Current Emitter-Base Current Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain Symbol ICBO IEBO Test Conditions VCBO = 30V VEB = 10V Min - - 30 40 10 - - 4000 10000 20000 - - Typ - - - - - - - - - - 220 3.5 Max 100 100 - - - 1 1.5 - - - - - MHz pF Unit nA nA V V V V V V(BR)CEO IC = 10mA V(BR)CBO IC = 10A V(BR)EBO IE = 100nA VCE(sat) VBE(sat) hFE IC = 100mA, IB = 0.1mA IC = 100mA, IB = 0.1mA IC = 1mA, VCE = 5V IC = 10mA, VCE = 5V IC = 100mA, VCE = 5V Transition Frequency Collector Capacitance fT Cc IC = 30mA, VCE = 5V, f = 100MHz IE = 0, VCB = 30V Schematic Diagram C B B C E E NPN PNP .016 (0.48) C B E .098 (2.5) Max .037 (0.95) .074 (1.9) .118 (3.0) Max .051 (1.3) .043 (1.1) .007 (0.2) |
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