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NTE2407 Silicon PNP Transistor General Purpose Amp, Surface Mount (Compl to NTE2406)
Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600mA Total Device Dissipation (FR-5 Board, Note 1), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 225mW Derate above +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.8mW/C Thermal Resistance, Junction-to-Ambient (FR-5 Board, Note 1), RthJA . . . . . . . . . . . . . . 556C/W Total Device Dissipation (Alumina Substrate, Note 2), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW Derate above +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.4mW/C Thermal Resistance, Junction-to-Ambient (Alumina Substrate, Note 2), RthJA . . . . . . . . 417C/W Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Note 1. FR-5 = 1.000 (25.4mm) x .750 (19.05mm) x .062 (1.57mm). Note 2. Alumina = .400 (10.2mm) x .300 (7.62mm) x .024 (.609mm), 99.5% alumina. Electrical Characteristics: (TA = +25C unless otherwise specified)
Parameter OFF Characteristics Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEX Base Current IB IC = 10A, IE = 0 IC = 10mA, IB = 0, Note 3 IE = 10A, IC = 0 VCB = 50V, IE = 0 VCB = 50V, IE = 0, TA = +125C VCE = 30V, VEB(off) = 0.5V VCE = 30V, VEB(off) = 0.5V 60 60 5 - - - - - - - - - - - - - - 0.01 10 50 50 V V V A A nA nA Symbol Test Conditions Min Typ Max Unit
Note 3. Pulse Test: Pulse Width 300s, Duty Cycle 2%.
Electrical Characteristics (Cont'd): (TA = +25C unless otherwise specified)
Parameter ON Characteristics (Note 3) DC Current Gain hFE VCE = 10V, IC = 0.1mA VCE = 10V, IC = 1mA VCE = 10V, IC = 10mA VCE = 10V, IC = 150mA VCE = 10V, IC = 500mA Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Small-Signal Characteristics Current Gain-Bandwidth Product Output Capacitance Input Capacitance Switching Characteristics Turn-On Time Delay Time Rise Time Turn-On Time Delay Time Rise Time ton td tr toff ts tf VCC = 6V, IC = 150mA, IB1 = IB2 = 15mA VCC = 30V, IC = 150mA, IB1 = 15mA - - - - - - - - - - - - 45 10 40 100 80 30 ns ns ns ns ns ns fT Cobo Cibo IC = 50mA, VCE = 20V, f = 100MHz, Note 3 VCB = 10V, IE = 0, f = 1MHz VEB = 2V, IC = 0, f = 1MHz 300 - - - - - - 8 30 MHz pF pF VCE(sat) VBE(sat) IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA 35 50 100 100 50 - - - - - - - - - - - - - - - - 300 - 0.4 1.6 1.3 2.6 V V V V Symbol Test Conditions Min Typ Max Unit
Note 3. Pulse Test: Pulse Width 300s, Duty Cycle 2%.
.016 (0.48)
C
B
E
.098 (2.5) Max
.037 (0.95) .074 (1.9) .118 (3.0) Max .051 (1.3)
.043 (1.1)
.007 (0.2)

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