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| TN4033A Discrete POWER & Signal Technologies TN4033A C TO-226 BE PNP General Purpose Amplifier This device is designed for general purpose amplifier and switching applications at currents to 500 mA and collector voltages up to 70V. Sourced from Process 67. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25C unless otherwise noted Parameter Value 80 80 5.0 1.0 -55 to +150 Units V V V A C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RJC RJA TA = 25C unless otherwise noted Characteristic Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max TN4033A 1.0 8.0 125 50 Units W mW/C C/W C/W (c) 1997 Fairchild Semiconductor Corporation TN4033A PNP General Purpose Amplifier (continued) Electrical Characteristics Symbol Parameter TA = 25C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO Collector-Emitter Sustaining Voltage* Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Cutoff Current Emitter-Cutoff Current I C = 10 mA, IB = 0 I C = 10 A, IE = 0 I E = 10 A, I C = 0 VCB = 60 V, IE = 0 VCB = 60 V, IE = 0, TA = 150C VEB = 5.0 V, IC = 0 80 80 5.0 50 50 10 V V V nA A A ON CHARACTERISTICS hFE DC Current Gain I C = 100 A, VCE = 5.0 V I C=100mA, VCE=5.0V,TA = -55C I C = 100 mA, VCE = 5.0 V I C = 500 mA, VCE = 5.0 V I C = 1.0 A, VCE = 5.0 V I C = 150 mA, IB = 15 mA I C = 500 mA, IB = 50 mA I C = 150 mA, IB = 15 mA I C = 500 mA, VCE = 0.5 V 75 40 100 70 25 300 VCE(sat) VBE(sat) VBE(on) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage 0.15 0.5 0.9 1.1 V V V V SMALL SIGNAL CHARACTERISTICS Cobo Cibo hfe Output Capacitance Input Capacitance Small-Signal Current Gain VCB = 10 V, IE = 0, f = 1.0 MHz VEB = 0.5 V, IC = 0, f = 1.0 MHz I C = 50 mA, VCE = 10 V, f = 100 MHz 1.0 20 110 4.0 pF pF SWITCHING CHARACTERISTICS ts ton tf Storage Time Turn-On Time Fall Time I C = 500 mA, IB1 = IB2 = 50 mA I C = 500 mA, IB1 = 50 mA I C = 500 mA, IB1 = IB2 = 50 mA 350 100 50 ns ns ns *Pulse Test: Pulse Width 300 s, Duty Cycle 1.0% TN4033A PNP General Purpose Amplifier (continued) Typical Characteristics 300 V CE = 5V 250 125 C VCESAT- COLLECTOR-EMITTER VOLTAGE (V) hFE - TYPICAL PULSED CURRENT GAIN Typical Pulsed Current Gain vs Collector Current Collector-Emitter Saturation Voltage vs Collector Current 0.6 = 10 200 150 100 50 0 0.1 - 40 C 25 C 0.4 25 C 125 C 0.2 - 40 C 0.3 1 3 10 30 100 300 I C - COLLECTOR CURRENT (mA) P6 1000 10 100 I C - COLLECTOR CURRENT (mA) 1000 VBE(ON) BASE-EMITTER ON VOLTAGE (V) - VBESAT- BASE-EMITTER VOLTAGE (V) Base-Emitter Saturation Voltage vs Collector Current 1.2 1 0.8 0.6 0.4 10 IC 100 - COLLECTOR CURRENT (mA) P 67 Base-Emitter ON Voltage vs Collector Current 1 VCE = 5V 0.8 - 40 C = 10 - 40 C 25 C 125 C 0.6 25 C 0.4 125 C 1000 0.2 0.1 1 10 I C - COLLECTOR CURRENT (mA) 50 Collector-Cutoff Current vs Ambient Temperature ICBO- COLLECTOR CURRENT (nA) 100 V CB = 50V CAPACITANCE (pF) 10 Collector-Base and Emitter-Base Capacitance vs Reverse Bias Voltage 500 f = 1.0 MHz 200 100 50 20 10 C ibo 1 0.1 C obo 25 50 75 100 125 TA - AMBIENT TEMPERATURE (C) P6 150 6 0.1 1 10 REVERSE BIAS VOLTAGE (V) 50 TN4033A PNP General Purpose Amplifier (continued) Typical Characteristics (continued) Switching Times vs Collector Current 240 VCE = -10V 200 TIME (ns) TIME (ns) 160 120 80 40 0 1 2 I C Turn On and Turn Off Times vs Collector Current 500 t off 400 300 200 100 t on 0 10 I B1 = I B2 = I C V CC = - 30V 10 VCE = -1.0V 20 100 - COLLECTOR CURRENT (mA) P6 200 100 500 I C - COLLECTOR CURRENT (mA) P6 1000 Power Dissipation vs Ambient Temperature 1 PD - POWER DISSIPATION (W) TO-226 0.75 0.5 0.25 0 0 25 50 75 100 TEMPERATURE (o C) 125 150 |
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