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 Bulletin I25152 rev. C 05/97
111RKI SERIES
PHASE CONTROL THYRISTORS Stud Version
Features
High current and high surge ratings dv/dt = 1000V/s option Ceramic housing Threaded studs UNF 1/2 - 20UNF2A Types up to 1200V V RRM/V DRM di/dt = 300A/s
110A
TypicalApplications
DC motor controls Controlled DC power supplies AC controllers
Major Ratings and Characteristics
Parameters
IT(AV) @ TC IT(RMS) ITSM @ 50Hz @ 60Hz I2t @ 50Hz @ 60Hz VDRM /VRRM tq TJ typical
111RKI
110 90 172 2080 2180 21.7 19.8 400 to 1200 110 - 40 to 140
Units
A C A A A KA2s KA2s V s C
case style TO-209AC (TO-94)
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1
111RKI Series
Bulletin I25152 rev. C 05/97
ELECTRICAL SPECIFICATIONS Voltage Ratings
Type number Voltage Code
40 111RKI 80 120
V DRM/V RRM, max. repetitive peak and off-state voltage V
400 800 1200
VRSM , maximum nonrepetitive peak voltage V
500 900 1300
I DRM /I RRM max.
@ TJ = TJ max.
mA
20
On-state Conduction
Parameter
I T(AV) Max. average on-state current @ Case temperature IT(RMS) Max. RMS on-state current ITSM Max. peak, one-cycle non-repetitive surge current
111RKI
110 90 172 2080 2180 1750 1830
Units Conditions
A C DC @ 83C case temperature t = 10ms A t = 8.3ms t = 10ms t = 8.3ms t = 10ms KA2s t = 8.3ms t = 10ms t = 8.3ms KA2s No voltage reapplied 100% VRRM reapplied No voltage reapplied 100% VRRM reapplied Sinusoidal half wave, Initial TJ = TJ max. 180 conduction, half sine wave
I 2t
Maximum I2t for fusing
21.7 19.8 15.3 14.0
I2t
Maximum I2t for fusing
217 0.82
t = 0.1 to 10ms, no voltage reapplied (16.7% x x IT(AV) < I < x IT(AV)), TJ = TJ max.
V T(TO)1 Low level value of threshold voltage V T(TO) 2 High level value of threshold voltage r t1 r t2 VTM IH IL Low level value of on-state slope resistance High level value of on-state slope resistance Max. on-state voltage Maximum holding current Typical latching current
V 1.02 (I > x IT(AV)),T J = TJ max. (16.7% x x IT(AV) < I < x IT(AV)), T J = TJ max. m 1.70 1.57 200 mA 400 T J = 25C, anode supply 6V resistive load V (I > x IT(AV)),TJ = TJ max. Ipk= 350A, TJ = TJ max., tp = 10ms sine pulse
2.16
Switching
Parameter
di/dt Max. non-repetitive rate of rise of turned-on current t
d
111RKI
300 1
Units Conditions
A/s Gate drive 20V, 20, t 1s T J = TJ max, anode voltage 80% VDRM Gate current 1A, di /dt = 1A/s
g r
Typical delay time Typical turn-off time
s tq 110
V = 0.67% VDRM, TJ = 25C
d
ITM = 50A, TJ = TJ max., di/dt = -5A/s, VR = 50V dv/dt = 20V/s, Gate 0V 25
2
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111RKI Series
Bulletin I25152 rev. C 05/97
Blocking
Parameter
dv/dt IRRM IDRM Maximum critical rate of rise of off-state voltage Max. peak reverse and off-state leakage current
111RKI
500 20
Units Conditions
V/s mA TJ = TJ max. linear to 80% rated VDRM TJ = TJ max, rated V DRM/V RRM applied
Triggering
Parameter
PGM IGM +VGM -VGM Maximum peak gate power
111RKI
12 3.0 3.0 20
Units Conditions
W A T J = TJ max, t 5ms
p
PG(AV) Maximum average gate power Max. peak positive gate current Maximum peak positive gate voltage Maximum peak negative gate voltage TYP. IGT DC gate current required to trigger 180 80 40 VGT DC gate voltage required to trigger 2.5 1.6 1 IGD VGD DC gate current not to trigger DC gate voltage not to trigger
T J = TJ max, f = 50Hz, d% = 50 T J = TJ max, t 5ms
p
V 10 MAX. 120 2 6.0 0.25 mA V V mA
TJ = TJ max, tp 5ms
T J = - 40C T J = 25C T J = 140C T J = - 40C T J = 25C T J = 140C Max. gate current/ voltage not to trigger is the max. value which will not trigger any unit with rated VDRM anode-to-cathode applied Max. required gate trigger/ current/ voltage are the lowest value which will trigger all units 12V anode-to-cathode applied
TJ = TJ max
Thermal and Mechanical Specification
Parameter
TJ Tstg RthJC RthCS Max. operating temperature range Max. storage temperature range Max. thermal resistance, junction to case Max. thermal resistance, case to heatsink T Mounting torque, 10% 0.1 15.5 (137) 14 (120) wt Approximate weight Case style 130 g See Outline Table 0.27 K/W Mounting surface, smooth, flat and greased Non lubricated threads Nm (lbf-in) Lubricated threads DC operation
111RKI
-40 to 140 -40 to 150
Units
C
Conditions
TO - 209AC (TO-94)
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111RKI Series
Bulletin I25152 rev. C 05/97
RthJC Conduction
(The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC)
Conduction angle
180 120 90 60 30
Sinusoidal conduction Rectangular conduction Units
0.043 0.052 0.066 0.096 0.167 0.031 0.053 0.071 0.101 0.169 K/W
Conditions
TJ = TJ max.
Ordering Information Table
Device Code
11
1
1
2
RKI 120
3 4 5
1 2
-
I T(AV) rated average output current (rounded/10) 0 = Eyelet terminals (Gate and Auxiliary Cathode Leads) 1 = Fast - on terminals (Gate and Auxiliary Cathode Leads) 2 = Flag terminals (For Cathode and Gate Terminals)
3 4 5
-
Thyristor Voltage code: Code x 10 = VRRM (See Voltage Rating Table) Critical dv/dt: None = 500V/sec S90 = 1000V/sec
Outline Table
CERAMIC HOUSING FLAG TERMINAL
22.5 DIA. (0.89) MAX. 1.5 (0.06) DIA. 5.2 (0.20) DIA.
40 (1.57)
44 (1.73)
10 (0.39)
24 (0.94) MAX.
7.5 (0.30)
10 (0.39) MAX.
21(0.83)
MAX.
1/2"-20UNF-2A
Case Style TO-208AD (TO-83)
All dimensions in millimeters (inches)
SW 27
2.4 (0.09) 29.5 (1.16)
4
(0.65)
16.5
10 (0 39)
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111RKI Series
Bulletin I25152 rev. C 05/97
Outline Table
CERAMIC HOUSING
16.5 (0.65) MAX.
9. 5
FLE XIB LE L EAD
C.S. 16mm 2 RED SILICON RUB BER 157 (6.1 8) 170 (6.69) RE D CATHODE
WHITE G ATE
C.S. 0 .4 mm (.0006 s.i.)
2
(.025 s.i.)
Fast-on Terminals
215 (8.46) 55 (2.16) MIN. RED SHRI NK WHI TE SHR INK 24 (0.94) MAX . 10 (0.39) MAX. 22.5 (0.8 8) MAX. DIA. 10 (0.39)
AMP. 280000-1 REF-250
21 (0.83)
MAX .
SW 27 1/2"-20UNF-2A
29.5 (1.16) MAX.
Case Style TO-209AC (TO-94)
All dimensions in millimeters (inches)
Maximum Allowable Case Temperature (C)
130 120
111RKI Series R thJC (DC) = 0.27 K/W
Maximum Allowable Case Temperature (C)
140
140 130 120
Conduction Period
Conduction Angle
110 100 90 80 70 0 20 40 60 80 100 120 140 160 180 Average On-state Current (A)
Fig. 2 - Current Ratings Characteristics
110 100 90 30 80 0 20 40 60 80 100 120 Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
30 60 90 120 180 DC
90 60 120 180
20
111RKI Series R thJC (DC) = 0.27 K/W
(0
.79
)M IN .
(0 .
37 )
4.3 (0.17) DIA.
MI N
8.5 (0.33) DIA.
2.6 (0.10) MAX.
.
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5
111RKI Series
Bulletin I25152 rev. C 05/97
Maximum Average On-state Power Loss (W) 160 140 120 100 80 60 40 20 0 0 20 40 60 80 100 120 0 20 40 60 80 100 120 140 Average On-state Current (A) Maximum Allowable Ambient Temperature (C) 111RKI Series T J = 140C
Conduction Angle
180 120 90 60 30 RMS Limit
A hS Rt
0. 6
K/ W
.3 =0
0. 8
K/
K/ W 1K /W
1 .5
W a e lt -D R
K/W
2 K/ W
4 K/W 5 K/ W
Fig. 3 - On-state Power Loss Characteristics
Maximum Average On-state Power Loss (W)
220 200 180 160 140 120 100 RMS Limit 80 60 40 20 0
Conduction Period
DC 180 120 90 60 30
0 .6
R
K/ W
SA th
= 3 0. W K/ -D ta el R
0.8
1K
K/ W /W
1.5 K
/W 2 K/W
4 K/W
5 K/ W
111RKI Series TJ = 140C
0
20
40
60
80 100 120 140 160 180 0
20
40
60
80
100
120
140
Average On-state Current (A)
Maximum Allowable Ambient Temperature (C)
Fig. 4 - On-state Power Loss Characteristics
Peak Half Sine Wave On-state Current (A)
1800 1600 1400 1200 1000 800 1
At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial TJ = 140C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s
Peak Half Sine Wave On-state Current (A)
2000
2500
Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial TJ = 140C 2000 No Voltage Reapplied Rated VRRMReapplied 1500
1000 111RKI Series 500 0.01 0.1 1 10
111RKI Series
10
100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 5 - Maximum Non-Repetitive Surge Current
6
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111RKI Series
Bulletin I25152 rev. C 05/97
10000 Instantaneous On-state Current (A)
TJ = 25C 1000 TJ = 140C 100
10 111RKI Series 1 0 1 2 3 4 5 Instantaneous On-state Voltage (V)
Fig. 7 - On-state Voltage Drop Characteristics
1 Steady State Value R thJC = 0.27 K/W (DC Operation) 0.1
Transient Thermal Impedance Z thJC (K/W)
0.01 111RKI Series
0.001 0.0001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance ZthJC Characteristic
100 Instantaneous Gate Voltage (V)
Rectangular gate pulse a) Recommended load line for rated di/dt: 20V, 30ohms; tr<=0.5 s, tp=>6s b) Recommended load line for 10 <=30% rated di/dt: 15V, 40ohms (a) tr<=1 s, tp=>6s (b)
Tj=-40 C Tj=25 C
(1) PGM = (2) PGM = (3) PGM = (4) PGM =
12W, tp = 5ms 30W, tp = 2ms 60W, tp = 1ms 200W, tp = 300s
1
Tj=140 C
(1)
(2) (3)
(4)
VGD IGD 0.1 0.001 0.01
Device: 111RKI Series 0.1 1
Frequency Limited by PG(AV) 10 100 1000
Instantaneous Gate Current (A)
Fig. 9 - Gate Characteristics
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