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MITSUBISHI Nch POWER MOSFET
FS5VSH-3
HIGH-SPEED SWITCHING USE
FS5VSH-3
OUTLINE DRAWING
1.5MAX.
Dimensions in mm
4.5 1.3
r
10.5MAX.
1.5MAX. 8.6 0.3 9.8 0.5
3.0 +0.3 -0.5
0 -0
+0.3
1 5 0.8
B
0.5
qwe wr
2.6 0.4
2.5V DRIVE VDSS ............................................................................... 150V rDS (ON) (MAX) ............................................................. 0.35 ID ........................................................................................... 5A Integrated Fast Recovery Diode (TYP.) ............ 85ns
q
q GATE w DRAIN e SOURCE r DRAIN e
TO-220S
APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc.
MAXIMUM RATINGS
Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg --
(Tc = 25C)
Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight Typical value VGS = 0V VDS = 0V
Conditions
Ratings 150 10 5 20 5 5 20 30 -55 ~ +150 -55 ~ +150 1.2
4.5
Unit V V A A A A A W C C g
Feb.1999
L = 100H
(1.5)
MITSUBISHI Nch POWER MOSFET
FS5VSH-3
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
Symbol V (BR) DSS IGSS IDSS VGS (th) rDS (ON) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) trr Parameter
(Tch = 25C)
Test conditions ID = 1mA, VGS = 0V VGS = 10V, VDS = 0V VDS = 150V, VGS = 0V ID = 1mA, VDS = 10V ID = 2A, VGS = 4V ID = 2A, VGS = 2.5V ID = 2A, VGS = 4V ID = 2A, VDS = 5V VDS = 10V, VGS = 0V, f = 1MHz
Limits Min. 150 -- -- 0.6 -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. -- -- -- 0.9 0.27 0.28 0.54 12 1200 100 35 19 34 100 60 1.0 -- 85 Max. -- 0.1 0.1 1.2 0.35 0.37 0.70 -- -- -- -- -- -- -- -- 1.5 4.17 --
Unit V A mA V V S pF pF pF ns ns ns ns V C/W ns
Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time
VDD = 80V, ID = 2A, VGS = 4V, RGEN = RGS = 50
IS = 2A, VGS = 0V Channel to case IS = 5A, dis/dt = -100A/s
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE 50
POWER DISSIPATION PD (W) DRAIN CURRENT ID (A)
MAXIMUM SAFE OPERATING AREA 3 2 101 7 5 3 2 100 7 5 3 2
tw = 10ms 100ms 1ms 10ms DC
40
30
20
10
0
0
50
100
150
200
10-1 7 TC = 25C 5 Single Pulse 3 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 2 DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) 5.0
VGS = 5V 4V 2.5V 2V
CASE TEMPERATURE TC (C) OUTPUT CHARACTERISTICS (TYPICAL) 10
VGS = 5V 4V 2.5V 2V
DRAIN CURRENT ID (A)
8
DRAIN CURRENT ID (A)
4.0
1.5V
6
PD = 30W
3.0
4
1.5V
2.0
2
TC = 25C Pulse Test
1.0
TC = 25C Pulse Test
0
0
1.0
2.0
3.0
4.0
5.0
0
0
0.4
0.8
1.2
1.6
2.0
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN-SOURCE VOLTAGE VDS (V)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS5VSH-3
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 5.0 0.5
TC = 25C Pulse Test
ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL)
DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V)
4.0
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) ()
0.4
VGS = 2.5V 4V
3.0
ID = 8A
0.3
2.0
5A
0.2
1.0
2A
0.1
TC = 25C Pulse Test
0
0
1.0
2.0
3.0
4.0
5.0
0 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 DRAIN CURRENT ID (A)
GATE-SOURCE VOLTAGE VGS (V)
TRANSFER CHARACTERISTICS (TYPICAL) 10
TC = 25C VDS = 10V Pulse Test
FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) 102 7 5 4 3 2 101 7 5 4 3 2
TC = 25C 75C 125C
DRAIN CURRENT ID (A)
6
4
2
FORWARD TRANSFER ADMITTANCE yfs (S)
8
VDS = 5V Pulse Test
0
0
1.0
2.0
3.0
4.0
5.0
100 0 10
2 3 4 5 7 101
2 3 4 5 7 102
GATE-SOURCE VOLTAGE VGS (V)
DRAIN CURRENT ID (A)
CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 104 7 5 3 2 103 7 5 3 2 102 7 5 3 2 101
Ciss
SWITCHING CHARACTERISTICS (TYPICAL) 103 7 5 4 3 2 102 7 5 4 3 2
td(off) tf tr Tch = 25C VDD = 80V VGS = 4V RGEN = RGS = 50
Tch = 25C f = 1MHZ VGS = 0V
Coss Crss
SWITCHING TIME (ns)
CAPACITANCE Ciss, Coss, Crss (pF)
td(on)
3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE VOLTAGE VDS (V)
101 -1 10
2 3 4 5 7 100
2 3 4 5 7 101
DRAIN CURRENT ID (A)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS5VSH-3
HIGH-SPEED SWITCHING USE
GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) 20
VGS = 0V Pulse Test
GATE-SOURCE VOLTAGE VGS (V)
5.0
Tch = 25C ID = 5A
4.0
VDS = 50V
SOURCE CURRENT IS (A)
16
3.0
80V 100V
12
2.0
8
TC = 125C
1.0
4
75C 25C
0
0
4
8
12
16
20
0
0
0.4
0.8
1.2
1.6
2.0
GATE CHARGE Qg (nC)
SOURCE-DRAIN VOLTAGE VSD (V)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25C)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (tC)
ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 101 7 VGS = 4V ID = 1/2ID 5 Pulse Test 4 3 2 100 7 5 4 3 2 10-1 -50 0 50 100 150 2.0
THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL)
VDS = 10V ID = 1mA
GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V)
1.6
1.2
0.8
0.4
0
-50
0
50
100
150
CHANNEL TEMPERATURE Tch (C)
CHANNEL TEMPERATURE Tch (C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25C)
TRANSIENT THERMAL IMPEDANCE Zth (ch-c) (C/W)
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (tC)
BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4
VGS = 0V ID = 1mA
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 102 7 5 3 2 101 7 5 D = 1.0 3 0.5 2
0.2
1.2
1.0
0.8
PDM 0.1 0.05 0.02 0.01 Single Pulse
tw T D= tw T
100 7 5 3 2
0.6
0.4
-50
0
50
100
150
10-1 -4 10 2 3 5710-3 2 3 5710-22 3 5710-12 3 57100 2 3 57101 2 3 57102 PULSE WIDTH tw (s)
Feb.1999
CHANNEL TEMPERATURE Tch (C)

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