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2V181HJ PE6804 SK85C BAV16W06 06010 CMT164C KD40F40 TSM6866
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  Datasheet File OCR Text:
 NPN SILICON PLANAR R.F. MEDIUM POWER TRANSISTOR
ISSUE 2 MARCH 94 FEATURES * 1W POUT at 175 MHz, 28V, 18dB typical * 1W POUT at 400 MHz, 28V, 9.7dB typical * High Ptot * High efficiency
ZTX3866
C B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Temperature Range SYMBOL VCBO VCEO VCER VEBO ICM Ptot Tj:Tstg 55 30 55
E-Line TO92 Compatible VALUE UNIT V V V V mA mW C
3.5 400 350 -55 to +175
ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated).
PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Emitter Cut-Off Current Collector-Emitter Saturation Voltage Collector-Emitter Sustaining Voltage Static Forward Current Transfer Transitional Frequency Output Capacitance R.F. Power Output Efficiency SYMBOL V(BR)CBO V(BR)CEO(sus) V(BR)EBO ICEO VCE(sat) V(BR)CER(sus) hFE fT Cobo POUT
MIN. 55 30 3.5
TYP.
MAX.
UNIT V V V
CONDITIONS. IC=100A, IE=0 IC=5mA, IB=0 IE=100A, IE=0 VCB=28V, IB=0 IC=100mA, IB=20mA IC=5mA, RBE=10 IC=50mA, VCE=5V
20 1.0 55 15 400 700 3.0 700 50 900 70 200
A
V V
MHz pF mW %
IC=25mA, VCE=15V f=100MHz VCB=30V, IE=0, f=1MHz VCC=28V, PIN=100mW f=400MHz
PAGE NO


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