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| PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ISSUE 3 JUNE 94 FEATURES * 4.5 Amps continuous current * Up to 20 Amps peak current * Very low saturation voltage * Excellent gain up to 20 Amps * Very low leakage * Exceptional gain linearity down to 10mA * Spice model available ZTX949 C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Practical Power Dissipation* Power Dissipation at Tamb=25C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Ptotp Ptot Tj:Tstg -50 -30 -6 -20 -4.5 1.58 1.2 E-Line TO92 Compatible VALUE UNIT V V V A A W W C -55 to +200 *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 1 inch square minimum ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltag Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage SYMBOL V(BR)CBO V(BR)CER V(BR)CEO V(BR)EBO ICBO ICER R 1K IEBO VCE(sat) -40 -80 -100 -240 -960 3-312 MIN. -50 -50 -30 -6 TYP. -80 -80 -45 -8 -50 -1 -50 -1 -10 -60 -100 -160 -320 -1100 MAX. UNIT V V V V nA nA nA mV mV mV mV mV CONDITIONS. IC=-100A IC=-1A, RB 1K IC=-10mA* IE=-100A VCB=-40V VCB=-40V, Tamb=100C VCB=-40V VCB=-40V, Tamb=100C VEB=-6V IC=-0.5A, IB=-20mA* IC=-1A, IB=-20mA* IC=-2A, IB=-200mA* IC=-5A, IB=-300mA* IC=-5A, IB=-300mA* A A Base-Emitter Saturation Voltage VBE(sat) ZTX949 ELECTRICAL CHARACTERISTICS (at Tamb = 25C) PARAMETER Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio Transition Frequency Output Capacitance Switching Times SYMBOL VBE(on) hFE 100 100 75 MIN. TYP. -860 200 200 140 35 100 122 120 130 MAX. -1000 300 MHz pF ns ns UNIT mV CONDITIONS. IC=-5A, VCE=-1V* IC=-10mA, VCE=-1V IC=-1A, VCE=-1V* IC=-5A, VCE=-1V* IC=-20A, VCE=-1V* IC=-100mA, VCE=-10V f=50MHz VCB=-10V, f=1MHz IC=-4A, IB1=-400mA IB2=400mA, VCC=-10V fT Cobo ton toff *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% THERMAL CHARACTERISTICS PARAMETER Thermal Resistance: Junction to Ambient Junction to Case SYMBOL Rth(j-amb) Rth(j-case) MAX. 150 50 UNIT C/W C/W Max Power Dissipation - (Watts) 4.0 Thermal Resistance (C/W) 150 t1 D.C. D=t1/tP 3.0 Ca se 100 te tP D=0.6 2.0 m 1.0 Amb ient te mpe ratu -40 -20 0 20 40 pe ra tu re 50 D=0.2 D=0.1 re 60 80 100 120 140 160 180 200 0 0.0001 D=0.05 Single Pulse 0.001 0.01 0.1 1 10 100 T -Temperature (C) Pulse Width (seconds) Derating curve Maximum transient thermal impedance 3-313 ZTX949 TYPICAL CHARACTERISTICS IC/IB=50 IC/IB=10 Tamb=25C -55C +25C +175C 1.6 1.6 IC/IB=10 VCE(sat) - (Volts) 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 0.01 0.1 1 10 20 VCE(sat) - (Volts) 1.4 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 0.01 0.1 1 10 20 IC - Collector Current (Amps) IC - Collector Current (Amps) VCE(sat) v IC VCE(sat) v IC 1.6 hFE - Normalised Gain 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 +100C +25C -55C VCE=1V 300 1.6 hFE - Typical Gain 1.4 -55C +25C +100C +175C IC/IB=10 VBE(sat) - (Volts) 1.2 1.0 0.8 0.6 0.4 0.2 200 100 0.01 0.1 1 10 20 0 0.001 0.01 0.1 1 10 20 IC - Collector Current (Amps) IC - Collector Current (Amps) hFE v IC 100 -55C +25C +100C +175C VBE(sat) v IC Single Pulse Test at Tamb=25C 1.6 1.4 VCE=1V IC - Collector Current (Amps) VBE - (Volts) 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 0.01 0.1 1 10 20 10 D.C. 1s 100ms 10ms 1.0ms 0.1ms 1 0.1 0.1 1 10 100 IC - Collector Current (Amps) VCE - Collector Voltage (Volts) VBE(on) v IC Safe Operating Area 3-314 |
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