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| Target Data 05/01 20MT120UF "FULL-BRIDGE" IGBT MTP Features * UltraFast Non Punch Through (NPT) Technology * Positive VCE(ON)Temperature Coefficient * 10s Short Circuit Capability * HEXFRED TM Antiparallel Diodes with UltraSoft Reverse Recovery * Low Diode VF * Square RBSOA * Aluminum Nitride DBC * Optional SMT Thermystor Inside * Very Low Stray Inductance Design for High Speed Operation UltraFast NPT IGBT VCES = 1200V VCE(on) typ. = 3.05V @ VGE = 15V, IC = 20A TC = 25C Benefits * * * * * * * * * Optimized for Welding, UPS and SMPS Applications Rugged with UltraFast Performance Benchmark Efficiency above 20KHz Outstanding ZVS and Hard Switching Operation Low EMI, requires Less Snubbing Excellent Current Sharing in Parallel Operation Direct Mounting to Heatsink PCB Solderable Terminals Very Low Junction-to-Case Thermal Resistance Absolute Maximum Ratings Parameters V CES I I I I I C Max 1200 @ TC = 25C @ TC = 100C 40 20 120 120 @ TC = 100C 20 120 20 2500 900 400 @ TC = 25C @ TC = 100C Units V A Collector-to-Emitter Breakdown Voltage Continuos Collector Current Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage RMS Isolation Voltage, Any Terminal to Case, t = 1 min Maximum Power Dissipation CM LM F FM VGE V ISOL PD V W 1 20MT120UF Target Data 05/01 Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameters V(BR)CES V(BR)CES/ T J V CE(ON) Collector-to-Emitter Breakdown Voltage Temperature Coeff. of Breakdown Voltage Collector-to-Emitter Saturation Voltage Min Typ Max Units Test Conditions 1200 +1.2 3.05 3.37 4.23 3.89 4.31 4 - 1.2 15.7 420 1482 1.67 1.76 1.73 1.87 100 6 V V GE = 0V, I C = 250A V/C V GE = 0V, I C = 1mA (25-125C) V GE = 15V, I C = 20A V GE = 15V, I C = 25A V GE = 15V, I C = 40A V GE = 15V, I C = 20A T J = 125C V GE = 15V, I C = 25A T J = 125C V V CE = V GE , I C = 250A mV/C V CE = V GE , I C = 1mA (25-125C) S A V V CE V GE V GE IC = IC = IC = IC = V GE = 50V, I C = 20A, PW = 80s = 0V, V CE = 1200V, T J = 125C = 0V, V CE = 1200V, T J = 150C 20A 25A 20A, T J = 125C 25A, T J = 125C = 20V V V GE(th) V GE(th) / T J g fe I CES V FM Gate Threshold Voltage Temperature Coeff. of Threshold Voltage Transconductance Zero Gate Voltage Collector Current Diode Forward Voltage Drop I GES Gate-to-Emitter Leakage Current nA Switching Characteristics @ TJ = 25C (unless otherwise specified) Parameters Qg Qge Qgc E on Eoff Etot E on Eoff Etot C ies C oes Cres RBSOA Total Gate Charge (turn-on) Gate-Emitter Charge (turn-on) Gate-Collector Charge (turn-on) Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Input Capacitance Output Capacitance Reverse Transfer Capacitance Reverse Bias Safe Operating Area Min Typ Max Units Test Conditions 169 24 82 850 425 1275 1350 610 1960 2200 210 85 full square J nC IC = 20A VCC = 600V VGE = 15V VCC = 600V, IC = 20A VGE = 15V, Rg = 5, L = 200H TJ = 25C, Energy losses include tail and diode reverse recovery VCC = 600V, IC = 20A VGE = 15V, Rg = 5, L = 200H TJ = 125C, Energy losses include tail and diode reverse recovery VGE = 0V VCC = 30V f = 1.0 MHz TJ = 150C, IC = 120A VCC = 1000V, Vp = 1200V Rg = 5, VGE = +15V to 0V TJ = 150C VCC = 900V, Vp = 1200V Rg = 5, VGE = +15V to 0V TJ = 125C VCC = 600V, IC = 20A VGE = 15V, Rg = 5, L = 200H J pF SCSOA Short Circuit Safe Operating Area 10 s Erec trr Irr Reverse Recovery Energy of the Diode Diode Reverse Recovery Time Peak Reverse Recovery Current 1600 300 32 J ns A 2 20MT120UF Target Data 05/01 Thermal- Mechanical Specifications Parameters TJ TSTG RthJC RthCS Wt Operating Junction Temperature Range Storage Temperature Range Junction-to-Case Case-to-Sink Weight IGBT Diode Module 0.06 66 g (oz) (Heatsink Compound Thermal Conductivity = 1 W/mK) Min - 40 - 40 Typ Max 150 125 0.7 0.9 Units C C/ W Outline Table Dimensions in millimeters Data and specifications subject to change without notice. This product has been designed for Industrial Level. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 05/01 3 |
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