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| BSS79, BSS81 NPN Silicon Switching Transistors High DC current gain: 0.1mA to 500 mA Low collector-emitter saturation voltage Complementary types: BSS80, BSS82 (PNP) 3 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Peak collector current Base current Peak base current Total power dissipation, TS = 77 C Junction temperature Storage temperature Thermal Resistance Junction - soldering point 1) RthJS 2 1 VPS05161 Type BSS79B BSS79C BSS81B BSS81C Marking CEs CFs CDs CGs 1=B 1=B 1=B 1=B Pin Configuration 2=E 2=E 2=E 2=E 3=C 3=C 3=C 3=C Package SOT23 SOT23 SOT23 SOT23 Symbol VCEO VCBO VEBO IC ICM IB IBM Ptot Tj Tstg BSS79 40 75 6 800 1 100 200 330 150 BSS81 35 Unit V V mA A mA mW C -65 ... 150 220 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Nov-30-2001 BSS79, BSS81 Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 Collector-base breakdown voltage IC = 10 A, IE = 0 Emitter-base breakdown voltage IE = 10 A, IC = 0 Collector cutoff current VCB = 60 V, IE = 0 Collector cutoff current VCB = 60 V, IE = 0 , TA = 150 C Emitter cutoff current VEB = 3 V, IC = 0 DC current gain 1) IC = 100 A, VCE = 10 V IC = 1 mA, VCE = 10 V IC = 10 mA, VCE = 10 V IC = 150 mA, VCE = 10 V IC = 500 mA, VCE = 10 V hFE IEBO ICBO ICBO V(BR)EBO V(BR)CEO typ. max. Unit V 40 35 10 10 10 nA A nA 20 35 25 50 35 75 40 100 25 40 120 300 V 0.3 1.3 1.2 2.0 BSS79 BSS81 V(BR)CBO 75 6 - BSS79/81B BSS79/81C BSS79/81B BSS79/81C BSS79/81B BSS79/81C BSS79/81B BSS79/81C BSS79/81B BSS79/82C Collector-emitter saturation voltage1) IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA Base-emitter saturation voltage 1) IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA 1) Pulse test: t =300s, D = 2% VCEsat VBEsat - 2 Nov-30-2001 BSS79, BSS81 Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol Values min. AC Characteristics Transition frequency IC = 20 mA, VCE = 20 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Delay time VCC = 30 V, IC = 150 mA, IB1 = 15 mA, VBE(off) = 0.5 V Rise time VCC = 30 V, IC = 150 mA, IB1 = 15 mA, VBE(off) = 0.5 V Storage time VCC = 30 V, IC = 150 mA, IB1 =IB2 = 15mA Fall time VCC = 30 V, IC = 150 mA, IB1 =IB2 = 15mA tf 60 tstg 250 tr 25 td 10 ns Ccb 6 pF fT 250 MHz typ. max. Unit Test circuits Delay and rise time 30 V 200 Osc. 9.9 V 0 619 0.5 V Storage and fall time 30 V ~100 s < 5 ns 16.2 V 0 -13.8 V ~ 500 s EHN00045 200 Osc. 1 k -3.0 V EHN00046 Oscillograph: R > 100k C < 12pF tr < 5ns 3 Nov-30-2001 BSS79, BSS81 Total power dissipation Ptot = f(TS) Collector-base capacitance CCB = f (VCB) f = 1MHz 10 2 pF C cb 5 BSS 79/81 EHP00672 360 mW 300 270 P tot 240 210 180 150 120 90 60 30 0 0 15 30 45 60 75 90 105 120 10 1 5 C 150 TS 10 0 10 -1 5 10 0 5 10 1 V V CB 5 10 2 Permissible pulse load Ptotmax / PtotDC = f (tp ) 10 3 Ptot max 5 Ptot DC BSS 79/81 EHP00673 Transition frequency fT = f (IC) VCE = 20V 10 3 MHz T BSS 79/81 EHP00674 tp D= T tp fT 10 2 5 10 1 5 D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 2 10 2 5 2 10 0 10 -6 10 1 10 0 10 -5 10 -4 10 -3 10 -2 s tp 10 0 5 10 1 5 10 2 mA 5 10 3 C 4 Nov-30-2001 BSS79, BSS81 Saturation voltage IC = f (VBEsat , VCEsat) hFE = 10 EHP00756 DC current gain hFE = f (I C) VCE = 10V 10 3 BSS 79/81 EHP00676 2 C mA 10 2 5 V CE V BE h FE 5 150 C 25 C 10 2 10 5 1 -50 C 5 10 0 0 0.2 0.4 0.6 0.8 1.0 V 1.2 V BE sat , V CE sat 10 1 -1 10 10 0 10 1 10 C 2 mA 10 3 Delay time td = f (IC ) Rise time tr = f (IC) 10 3 ns td, tr 5 VCC = 30 V h FE = 10 tr 10 2 t r VBE = 5 V BSS 79/81 EHP00677 Storage time t stg = f (I C) Fall time 10 3 ns t stg , t f 5 BSS 79/81 t f = f (IC) EHP00678 t stg 10 2 hFE = 10 5 VBE = 2 V td td 5 tf hFE = 10 h FE = 20 V BE = 0 V 10 1 10 0 5 10 1 5 10 2 mA 5 10 3 10 1 1 10 5 10 2 mA 5 10 3 C C 5 Nov-30-2001 |
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