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| BSS8402DW COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR SPICE MODELS: BSS8402DW Features NEW PRODUCT * * * * * * * Low On-Resistance: RDS(ON) Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Complementary Pair Also Available in Lead Free Version A D2 G1 S1 SOT-363 Dim A BC Min 0.10 1.15 2.00 0.30 1.80 3/4 0.90 0.25 0.10 0 Max 0.30 1.35 2.20 0.40 2.20 0.10 1.00 0.40 0.25 8 B C D F M S2 G2 D1 Mechanical Data * * * * * * * * Case: SOT-363, Molded Plastic Case material - UL Flammability Rating Classification 94V-0 Moisture sensitivity: Level 1 per J-STD-020A Terminals: Solderable per MIL-STD-202, Method 208 Also Available in Lead Free Plating (Matte Tin Finish). Please see Ordering Information, Note 4, on Page 5 Terminal Connections: See Diagram Marking: KNP (See Page 5) Weight: 0.008 grams (approx.) K G H 0.65 Nominal H J K L M a J D F L TOP VIEW D1 G2 S2 Q1 Q2 All Dimensions in mm S1 G1 D2 Maximum Ratings - Total Device Characteristic Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range @ TA = 25C unless otherwise specified Symbol Pd RqJA Tj, TSTG Value 200 625 -55 to +150 Units mW C/W C Maximum Ratings N-CHANNEL - Q1, 2N7002 Section Characteristic Drain-Source Voltage Drain-Gate Voltage RGS 1.0MW Gate-Source Voltage Drain Current (Note 1) Continuous Pulsed Continuous Continuous @ 100C Pulsed Symbol VDSS VDGR VGSS ID @ TA = 25C unless otherwise specified Value 60 60 20 40 115 73 800 @ TA = 25C unless otherwise specified Value -50 -50 20 -130 Units V V V mA Units V V V mA Maximum Ratings P-CHANNEL - Q2, BSS84 Section Characteristic Drain-Source Voltage Drain-Gate Voltage RGS 20KW Gate-Source Voltage Drain Current (Note 1) Note: Continuous Continuous Symbol VDSS VDGR VGSS ID 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. DS30380 Rev. 4 - 2 1 of 5 www.diodes.com BSS8402DW a Diodes Incorporated Electrical Characteristics N-CHANNEL - Q1, 2N7002 Section @ TA = 25C unless otherwise specified Unit V A nA V W A mS pF pF pF ns ns VDD = 30V, ID = 0.2A, RL = 150W, VGEN = 10V, RGEN = 25W VDS = 25V, VGS = 0V f = 1.0MHz Test Condition VGS = 0V, ID = 10mA VDS = 60V, VGS = 0V VGS = 20V, VDS = 0V VDS = VGS, ID =-250mA VGS = 5.0V, ID = 0.05A VGS = 10V, ID = 0.5A VGS = 10V, VDS = 7.5V VDS =10V, ID = 0.2A NEW PRODUCT Characteristic OFF CHARACTERISTICS (Note 2) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Delay Time Turn-Off Delay Time @ Tj = 25C @ Tj = 125C @ TC = 25C @ TC = 125C Symbol BVDSS IDSS IGSS VGS(th) RDS (ON) ID(ON) gFS Ciss Coss Crss tD(ON) tD(OFF) Min 60 3/4 3/4 1.0 3/4 0.5 80 3/4 3/4 3/4 3/4 3/4 Typ 70 3/4 3/4 3/4 3.2 4.4 1.0 3/4 22 11 2.0 7.0 11 Max 3/4 1.0 500 10 2.5 7.5 13.5 3/4 3/4 50 25 5.0 20 20 Electrical Characteristics P-CHANNEL - Q2, BSS84 Section Characteristic OFF CHARACTERISTICS (Note 2) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Delay Time Turn-Off Delay Time Note: tD(ON) tD(OFF) 3/4 3/4 10 18 3/4 3/4 Ciss Coss Crss 3/4 3/4 3/4 3/4 3/4 3/4 45 25 12 VGS(th) RDS (ON) gFS -0.8 3/4 .05 3/4 3/4 3/4 -2.0 10 3/4 BVDSS IDSS IGSS -50 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 -15 -60 -100 10 Symbol Min Typ Max @ TA = 25C unless otherwise specified Unit V A A nA nA V W S pF pF pF ns ns VDD = -30V, ID = -0.27A, RGEN = 50W, VGS = -10V VDS = -25V, VGS = 0V f = 1.0MHz Test Condition VGS = 0V, ID = -250A VDS = -50V, VGS = 0V, TJ = 25C VDS = -50V, VGS = 0V, TJ = 125C VDS = -25V, VGS = 0V, TJ = 25C VGS = 20V, VDS = 0V VDS = VGS, ID = -1mA VGS = -5V, ID = 0.100A VDS = -25V, ID = 0.1A 2. Short duration test pulse used to minimize self-heating effect. DS30380 Rev. 4 - 2 2 of 5 www.diodes.com BSS8402DW N-CHANNEL - 2N7002 SECTION 1.0 VGS = 10V 9.0V 8.0V 7.0V 6.5V 6.0V 5.5V 5.0V 4.5V 4.0V 3.5V 3.0V 2.5V 2.1V 7 10V Tj = 25C NEW PRODUCT ID, DRAIN-SOURCE CURRENT (A) 6 5 5.5V VGS = 5.0V 0.8 0.6 4 5.0V 0.4 3 VGS = 10V 2 0.2 1 2.1V 0 0 1 2 3 4 5 0 0 0.2 0.4 0.6 0.8 1.0 ID, DRAIN CURRENT (A) Fig. 2 On-Resistance vs Drain Current 6 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 On-Region Characteristics 3.0 5 2.5 4 ID = 50mA ID = 500mA 2.0 3 2 1.5 VGS = 10V, ID = 200mA 1 1.0 -55 0 -30 -5 20 45 70 95 120 145 0 2 4 6 8 10 12 14 16 18 Tj, JUNCTION TEMPERATURE (C) Fig. 3 On-Resistance vs Junction Temperature VGS, GATE TO SOURCE VOLTAGE (V) Fig. 4 On-Resistance vs. Gate-Source Voltage 250 Pd, POWER DISSIPATION (mW) 10 VGS, GATE SOURCE CURRENT (V) 9 8 7 6 5 4 3 2 1 0 0 0.2 0.4 TA = -55C TA = +25C TA = +125C TA = +75C VDS = 10V 200 150 100 50 0 0 25 50 75 100 125 150 175 200 0.6 0.8 1 TA, AMBIENT TEMPERATURE (C) Fig. 6 Max Power Dissipation vs. Ambient Temperature ID, DRAIN CURRENT (A) Fig. 5 Typical Transfer Characteristics DS30380 Rev. 4 - 2 3 of 5 www.diodes.com BSS8402DW P-CHANNEL - BSS84 SECTION 600 TA = 25C -1.0 VGS = 5V NEW PRODUCT ID, DRAIN SOURCE CURRENT (mA) 500 -0.8 400 ID, DRAIN CURRENT (A) 4.5V TA = -55C -0.6 TA = 25C TA = 125C 300 3.5V -0.4 200 3.0V 100 2.5V -0.2 0 0 1 2 3 4 5 VDS, DRAIN SOURCE (V) Fig. 7, Drain Source Current vs. Drain Source Voltage -0.0 0 -1 -2 -3 -4 -5 -6 -7 -8 VGS, GATE-TO-SOURCE VOLTAGE (V) Fig. 8, Drain Current vs. Gate Source Voltage 15 VGS = -10V ID = -0.13A 12 10 9 8 7 6 5 4 3 2 TA = 125C 9 6 3 1 0 0 1 2 TA = 25C 3 4 5 0 -50 -25 0 25 50 75 100 125 150 VGS, GATE TO SOURCE (V) Fig. 9, On Resistance vs. Gate Source Voltage 25.0 TJ, JUNCTION TEMPERATURE (C) Fig. 10, On-Resistance vs. Junction Temperature 20.0 VGS = -3.5V VGS = -3V VGS = -4.5V VGS = -5V VGS = -4V 15.0 10.0 VGS = -6V 5.0 VGS = -8V VGS = -10V 0.0 -0.0 -0.2 -0.4 -0.6 -0.8 1.0 ID, DRAIN CURRENT (A) Fig. 11, On-Resistance vs. Drain Current DS30380 Rev. 4 - 2 4 of 5 www.diodes.com BSS8402DW Ordering Information (Note 3) Packaging SOT-363 Shipping 3000/Tape & Reel NEW PRODUCT Device BSS8402DW-7 Notes: 3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. 4. For Lead Free version (with Lead Free terminal finish) part number, please add "-F" suffix to part number above. Example: BSS8402DW-7-F. Marking Information KNP KNP = Product Type Marking Code YM = Date Code Marking Y = Year ex: R = 2004 M = Month ex: 9 = September YM Date Code Key Year Code Month Code Jan 1 Feb 2 2003 P March 3 2004 R Apr 4 May 5 2005 S Jun 6 Jul 7 2006 T Aug 8 2007 U Sep 9 Oct O 2008 V Nov N 2009 W Dec D DS30380 Rev. 4 - 2 5 of 5 www.diodes.com BSS8402DW |
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