 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| DN2470 DN2470 Initial Release N-Channel Depletion-Mode Vertical DMOS FET Features High input impedance Low input capacitance Fast switching speeds Low on resistance Free from secondary breakdown Low input and output leakages General Description This low threshold depletion-mode (normally-on) transistor utilizes an advanced vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermallyinduced secondary breakdown. Supertex's vertical DMOS FET is ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Application Normally-on switches Solid state relays Battery operated systems Converters Linear amplifiers Constant current sources Telecom Package Option Absolute Maximum Ratings Drain-to-Source Voltage Drain-to-Gate Voltage Gate-to-Source Voltage Operating and Storage Temperature Soldering Temperature* BVDSX BVDGX 20V -55C to +150C 300C * Distance of 1.6mm from case for 10 seconds. ** "Green" Certified Package Ordering Information Order Number / Package TO-252 DN2470K4 DN2470K4-G ** BVDSX / BVDGX 700V 700V RDS(ON) (max) 42 42 IDSS (typ) 500mA 500mA NR011905 1 Rev. 1 011105 DN2470 Thermal Characteristics Package TO-252 ID(continuous)* 170mA ID(pulsed) 500mA Power Dissipation @ TA=25C 2.5W** JC C/W 6.25 JA C/W 50** IDR* 170mA IDRM 500mA * ID(continuous) is limited by maximum rated TJ of 150C ** Mounted on FR4, 25mm x 25mm x 1.57mm Electrical Characteristics Symbol BVDSX VGS(OFF) VGS(OFF) IGSS ID(OFF) IDSS RDS(ON) RDS(ON) GFS CISS COSS CRSS td(ON) tr td(OFF) tf VSD trr (@25C unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage Gate-to-Source OFF Voltage Change in VGS(OFF) with Temperature Gate Body Leakage Drain-to-Source Leakage Current Saturated Drain-to-source Current Static Drain-to-Source ON-State Resistance Change in RDS(ON) with Temperature Forward Transconductance Input Capacitance Common Source Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-Off Delay Time Fall Time Diode Forward Voltage Drop Reverse Recovery Time Min 700 -1.5 Typ Max Units V Conditions VGS=-5V, ID=100A VDS=25V, ID=10A VDS=25V, ID=10A VGS=20V, VDS=0V VGS=-10V, VDS=Max Rating VGS=-10V, VDS=0.8 Max Rating, TA=125C VGS=0V, VDS=25V VGS=0V, ID=100mA VGS=0V, ID=100mA ID=100mA, VDS=10V VGS=-10V, VDS=25V f=1MHz VDD=25V, ID=100mA, RGEN=25 VGS=0V, ISD=200mA VGS=0V, ISD=200mA -3.5 4.5 100 1.0 1.0 500 42 1.1 V mV/C nA A mA mA %/C mmho pF 100 540 60 25 30 45 45 60 1.8 800 ns V ns Notes: 1) All DC parameters 100% tested at 25C unless otherwise stated. (Pulsed test: 300s pulse at 2% duty cycle.) 2) All AC parameters sample tested. Switching Waveforms and Test Circuit 0V Input -10V 10% t(ON) td(ON) VDD Output 0V 90% 90% 10% tr t(OFF) td(OFF) tf 10% Input Pulse Generator RGEN 90% VDD RL OUTPUT D.U.T Doc# DSFP-DN2470 NR011905 2 Rev. 1 011105 |
Price & Availability of DN2470
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |