 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| PD - 9.1680 IRG4ZH50KD Surface Mountable Short INSULATED GATE BIPOLAR TRANSISTOR WITH Circuit Rated UltraFast IGBT ULTRAFAST SOFT RECOVERY DIODE Features q High short circuit rating optimized for motor control, tsc = 10s, VCC = 720V, TJ = 125C, VGE = 15V n-channel C VCES = 1200V VCE(ON)typ = 2.79V q q q q q q q q q q IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft recovery antiparallel diodes for use in bridge configurations Combines low conduction losses with high switching speed Low profile low inductance SMD-10 Package Separated control & Power-connections for easy paralleling Good coplanarity Easy solder inspection and cleaning Highest power density and efficiency available HEXFRED Diodes optimized for performance with IGBTs. Minimized recovery characteristics High input impedance requires low gate drive power Less noise and interference G E(k) E @VGE = 15V, IC = 29A Benefits SMD-10 Absolute Maximum Ratings Parameter VCES IC @ TC = 25C IC @ TC = 100C ICM ILM IF @ TC = 100C IFM tsc VGE PD @ TC = 25C PD @ TC = 100C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Maximum Forward Current Short Circuit Withstand Time Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Max. 1200 54 29 108 108 16 108 10 20 210 83 -55 to +150 Units V A s V W C Thermal Resistance Parameter RJC RJC RCS Wt Junction-to-Case - IGBT Junction-to-Case - Diode SMD-10 Case-to-Heatsink (typical), * Weight Min. -- -- -- -- Typ. -- -- 0.44 6.0(0.21) Max. 0.60 1.20 -- -- Units C/W g (oz) * Assumes device soldered to 3.0 oz. Cu on 3.0mm IMS/Aluminum board, mounted to flat, greased heatsink. Notes: Repetitive rating: VGE = 20V; pulse width limited by maximum junction temperature (figure 20) VCC = 80% (VCES), VGE = 20V, L = 10H, RG = 5.0 (figure 19) Pulse width 80s; duty factor 0.1%. Pulse width 5.0s, single shot. 1 www.irf.com IRG4ZH50KD Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter Collector-to-Emitter Breakdown Voltage DV(BR)CES/DTJ Temperature Coeff. of Breakdown Voltage VCE(on) Collector-to-Emitter Saturation Voltage V(BR)CES Min. 1200 -- -- -- -- 3.0 -- 14 -- -- -- -- -- Typ. -- 0.91 2.79 3.32 2.66 -- -10 21 -- -- 2.5 2.1 -- Max. Units Conditions -- V VGE = 0V, IC = 250A -- V/C VGE = 0V, IC = 1.0mA 3.5 IC = 29A VGE = 15V -- V IC = 54A see figures 2, 5 -- IC = 29A, TJ = 150C 6.0 VCE = VGE, IC = 250A -- mV/C VCE = VGE, IC = 250A -- S VCE = 100V, IC = 29A 250 A VGE = 0V, VCE = 1200V 6500 VGE = 0V, VCE = 1200V, TJ = 150C 3.5 V IC = 16A see figure 13 -- IC = 16A, TJ = 150C 100 nA VGE = 20V VGE(th) DVGE(th)/DTJ gfe ICES VFM IGES Gate Threshold Voltage Temperature Coeff. of Threshold Voltage Forward Transconductance Zero Gate Voltage Collector Current Diode Forward Voltage Drop Gate-to-Emitter Leakage Current Switching Characteristics @ TJ = 25C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets tsc td(on) tr td(off) tf Ets LE Cies Coes Cres trr Irr Qrr di(rec)M/dt Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Short Circuit Withstand Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge Diode Peak Rate of Fall of Recovery During tb Min. -- -- -- -- -- -- -- -- -- -- 10 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. 190 25 70 110 43 150 200 3.20 2.28 5.48 -- 73 72 290 390 10.12 2.0 2800 140 53 90 164 5.8 8.3 260 680 120 76 Max. Units Conditions 280 IC = 29A 38 nC VCC = 400V see figure 8 110 VGE = 15V -- -- TJ = 25C ns 230 IC = 29A, VCC = 800V 290 VGE = 15V, RG = 5.0 -- Energy losses include "tail" -- mJ and diode reverse recovery 6.5 see figures 9,10,18 -- s VCC = 720V, TJ = 125C VGE = 15V, RG = 5.0 -- TJ = 150C, see figures 10,11,18 -- IC = 29A, VCC = 800V ns -- VGE = 15V, RG = 5.0, -- Energy losses include "tail" -- mJ and diode reverse recovery -- nH Measured 5mm from package -- VGE = 0V -- pF VCC = 30V see figure 7 -- = 1.0MHz 135 ns TJ = 25C see figure 245 TJ = 125C 14 IF = 16A 10 A TJ = 25C see figure 15 TJ = 125C 15 VR = 200V 675 nC TJ = 25C see figure 1838 TJ = 125C 16 di/dt = 200A/s -- A/s TJ = 25C see figure -- TJ = 125C 17 2 www.irf.com IRG4ZH50KD 25 F or b oth: 20 LOAD CURRENT (A) D uty c y c le : 50 % T J = 12 5 C T sink = 90 C G a te d riv e a s s pe c ified P ow er D is s ipation = 34 W S q u a re w a v e : 60% of rated voltage 15 10 I 5 Id e a l d io d es 0 0.1 1 10 100 f, Frequency (KHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 1000 1000 100 I C , Collector-to-Emitter Current (A) I C , Collector Current (A) 100 TJ = 150 C TJ = 150 C 10 10 TJ = 25 C V GE = 15V 20s PULSE WIDTH 2.0 3.0 4.0 5.0 TJ = 25 C V CC = 50V 5s PULSE WIDTH 5 6 7 8 9 10 11 12 1 1.0 1 VCE , Collector-to-Emitter Voltage (V) VGE , Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics 3 Fig. 3 - Typical Transfer Characteristics www.irf.com IRG4ZH50KD 60 4.0 50 VCE , Collector-to-Emitter Voltage(V) VGE = 15V 80 us PULSE WIDTH IC = 58 A Maximum DC Collector Current(A) 40 30 3.0 IC = 29 A 20 10 IC = 14.5 A 0 25 50 75 100 125 150 2.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 TC , Case Temperature ( C) TJ , Junction Temperature ( C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature 1 Thermal Response (Z thJC ) D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t 1 / t2 2. Peak T = PDM x Z thJC + TC J 0.001 0.00001 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4ZH50KD 4000 20 VGE , Gate-to-Emitter Voltage (V) VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc VCC = 400V I C = 29A 16 C, Capacitance (pF) 3000 Cies 12 2000 8 1000 4 0 1 Coes Cres 10 100 0 0 40 80 120 160 200 VCE , Collector-to-Emitter Voltage (V) QG , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 7.0 6.6 Total Switching Losses (mJ) Total Switching Losses (mJ) V CC = 800V V GE = 15V TJ = 25 C I C = 29A 100 RG = 5.0 Ohm VGE = 15V VCC = 800V IC = 58 A 6.2 10 IC = 29 A IC =14.5 A 5.8 5.4 0 10 20 30 40 50 1 -60 -40 -20 0 20 40 60 80 100 120 140 160 RG , Gate Resistance ( ) TJ , Junction Temperature C ) ( Fig. 9 - Typical Switching Losses vs. Gate Resistance 5 Fig. 10 - Typical Switching Losses vs. Junction Temperature www.irf.com IRG4ZH50KD 25 Total Switching Losses (mJ) I C , Collector Current (A) RG = Ohm = 5.0 T J = 150 C VCC = 800V 20 VGE = 15V 1000 VGE = 20V T J = 125 o C 100 15 10 10 5 SAFE OPERATING AREA 0 0 10 20 30 40 50 60 1 1 10 100 1000 10000 I C , Collector Current (A) VCE , Collector-to-Emitter Voltage (V) Fig. 11 - Typical Switching Losses vs. Collector Current Fig. 12 - Turn-Off SOA 1000 Instantaneous Forward Current ( A ) 100 TJ = 150C 10 TJ = 125C TJ = 25C 1 0.0 1.0 2.0 3.0 4.0 5.0 6.0 Forward Voltage Drop - V FM (V) Fig. 13 - Typical Forward Voltage Drop vs. Instantaneous Forward Current 6 www.irf.com IRG4ZH50KD 300 40 VR = 20 0V T J = 12 5C T J = 25 C 30 200 VR = 2 00V T J = 125 C T J = 25C I F = 16A I F = 8.0 A I R R M - (A ) I F = 32A trr - (n s) 20 I F = 32A I F = 16A I F = 8.0A 100 10 0 100 di f /dt - (A / s) 1000 0 100 di f /d t - (A / s) 1000 Fig. 14 - Typical Reverse Recovery vs. dif/dt 1200 Fig. 15 - Typical Recovery Current vs. dif/dt 1000 VR = 200 V T J = 125C T J = 25C 900 VR = 20 0V T J = 125C T J = 25C 600 I F = 16A di(rec )M /dt - (A / s ) I F = 32A Q R R - (nC ) 100 I F = 32A I F =16A I F = 8.0 A I F = 8.0A 300 0 100 di f /d t - (A / s) 1000 10 100 1000 di f /d t - (A / s) Fig. 16 - Typical Stored Charge vs. dif/dt 7 Fig. 17 - Typical di(rec)M/dt vs. dif/dt www.irf.com IRG4ZH50KD Same type device as D .U.T. 90% V ge +V ge V ce 80% of Vce 430F D .U .T. Ic 10% V ce Ic 5% Ic td (off) tf 90% Ic Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf E off = t1+5 S V ce Ic Vceic dtdt t1 t1 t2 Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf G A T E V O LT A G E D .U .T . 10% + V g +V g trr Ic Q rr = trr id dt Ic dt tx tx 10% V c c Vce 10% Ic 90% Ic D U T V O LT A G E AND CURRENT Ipk Ic 10% Irr Vcc V pk Irr Vcc D IO D E R E C O V E R Y W AVEFORMS td(on) tr 5% V c e t2 E on = V c e ieIc dt Vce dt t1 t2 D IO D E R E V E R S E RECOVERY ENERG Y t3 t4 E rec = Vc Ic dt t4 V d id dt t3 t1 Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining Eon, td(on), tr 8 Fig. 18d - Test Waveforms for Circuit of Fig. 18a, Defining Erec, trr, Qrr, Irr www.irf.com IRG4ZH50KD V g G A T E S IG N A L D E V IC E U N D E R T E S T C U R R E N T D .U .T . V O LT A G E IN D .U .T . C U R R E N T IN D 1 t0 t1 t2 Figure 18e. Macro Waveforms for Figure 18a's Test Circuit L 1000V 50V 600 0 F 100 V Vc* D.U.T. RL= 0 - 600V 600V 4 X IC @25C Figure 19. Clamped Inductive Load Test Circuit Figure 20. Pulsed Collector Current Test Circuit 9 www.irf.com IRG4ZH50KD Case Outline -- SMD-10 Dimensions are shown in milimeters 17.30 14.20 4.27 n/c E(k) G 0.90 5.55 29.00 C 0.90 E E Recommended footprint 10 WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 3/98 www.irf.com |
Price & Availability of IRG4ZH50KD
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |