View T0370NBSP_321211.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

Features
* * * * * * *
High power added efficiency Excellent ACP and ALT Three quiescent current states CMOS compatible state logic inputs Internally matched input and output Low leakage current Single +3.0 V operation
Benefits
* * * * *
Extended battery operating time Low current consumption Very small 6 x 6 mm package Few external components Fully ESD protected
Description
The T0370 is a 6 mm x 6 mm 3-V CDMA/AMPS cell-band power-amplifier module designed for use in mobile phones. The module incorporates a SiGe HBT two-stage CDMA / AMPS power-amplifier die. The module is 50-Ohm matched on the input and output allowing the device to be used with minimal external circuitry. Its RF performance meets the requirements for products designed to the IS-95A and B and IS-98 standards. The T0370 gives excellent RF performance with low current consumption resulting in longer talk times in portable applications. The module features three quiescent current states to minimize current consumption for each output power level. The module has a small 6 mm x 6 mm footprint to allow use in compact phone design.
3-V CDMA/AMPS Power-Amplifier Module T0370
Block Diagram
Figure 1.
VCC1 GND VCC2
1
RFIN
79
5 6 RF OUT
2
Match
Match
Match
Bias & Control
8
VCTRL1
3
VREF
4
VCTRL2
Ordering Information
Extended Type Number T0370 Package Remarks 6 x 6 mm housing
Rev. A3, 13-Dec-01
Preliminary Information
1 (22)
Preliminary Information
Pin Configuration
Figure 2. Pinning
Vctrl1 GND Vcc1 1 RFin 2 87 34 Vref Vctrl2 6 RFout 5 Vcc2
Pin Description
Pin 1 2 3 4 5 6 7 8 Paddle Symbol Vcc1 RF IN Vref Vctrl2 Vcc2 RF OUT GND Vctrl1 GND Collector supply for input stage RF input. The RF circuit is DC grounded internally, 50 ohm RF impedance. Input for regulated supply for setting bias CMOS compatible logic level used to set bias Collector supply for output stage RF output. The RF circuit is DC blocked internally, 50 ohm RF impedance Ground CMOS compatible logic level used to set bias Device Ground and heat sink, requires good thermal path Function
Product Description Operation
The T0370 is a two-stage SiGe HBT power-amplifier module in a cascade configuration intended for use in CDMA/AMPS cellular-band handsets. The operation modes of the T0370 are determined based on the setting of VCTRL2, and VREF. The truth table below defines the operating mode. In addition, please refer to the test circuit above and the section on determining the input and output matching circuits below.
Operating Mode High power Mid power Low power Off High High Low 0V VCTRL1 High Low Low 0V VCTRL2 VREF > 2.7 VDC > 2.7 VDC > 2.7 VDC 0 VDC
2 (22)
T0370
Rev. A3, 13-Dec-01
T0370
Application
The application circuit for the T0370 is very simple since most of the critical components are included inside the module. There are several important considerations when using the module in a phone design. First of all, it is important that the source impedance of the VCC power supply is very low. This is because the high current demand during the modulation peaks of the CDMA waveform can introduce voltage ripple at the symbol rate that will introduce additional intermodulation distortion or adjacent channel power distortion at the output of the power amplifier. If the power amplifier has a quiescent current of 100 mA and a peak current demand in excess of 1 A, it is possible to see 900 mA change in the current required from VCC as the modulated signal moves from one extreme to the other. If the power supply source impedance is 1 , the resulting voltage ripple would be 0.9 V which would cause the amplifier to fail in ACP requirements. Generally, the power supply source impedance should be kept as low as possible, preferably below 0.1 ohms total. Most battery technologies used in cellular telephones will support a low source impedance, but it may be necessary to supplement this in some designs with an low ESR capacitor. Ceramic or tantalum capacitors of approximately 10 micro-farads work well for this requirement. The application circuit includes 100 nF capacitors at each of the PA control lines and VCC lines to ensure proper RF bypassing. Depending on the phone board layout and circuit bypassing in other areas of the phone, some of these components may not be necessary. There are a number of VCO signals and IF signals used in a given phone design, so it is important to protect the PA module from interfering signals and to limit any interference coming from the PA itself. Care should be taken when removing any of the RF bypassing components. One final area of concern is with excessive bypassing. If too large a value of bypassing capacitor is used on any of the control lines, it could reduce the frequency response of that control line to the point where a specification failure could occur. Please be sure that the logic lines and regulated supply lines driving the power amplifier control lines are adequate to supply peak current requirements of the bypassing capacitors chosen on the control lines.
Absolute Maximum Ratings
Parameter Power supply voltage, no RF applied Power supply voltage, RF applied Bias reference voltages and bias control voltages (Pins 3, 4, and 8 respectively) Power dissipation Case temperature, survival Storage temperature DC blocked RF output DC grounded RF input ( no DC voltages) Symbol VCC1, VCC2 VCC1, VCC2 VREF, VCtrl1, VCtrl2 PDISS TC Tstg RFOUT RFIN Value - 0.5 to + 6.0 - 0.5 to + 5.0 -0.5 to + 5.0 2.5 -40 to +100 -40 to +150 -20 to +20 0 to 0 Unit VDC VDC VDC W C C VDC VDC
Note: The part may not survive all maximums applied simultaneously.
Thermal Resistance
Parameter Junction-ambient Symbol RthJA Value t.b.d. Unit K/W
Preliminary Information
Rev. A3, 13-Dec-01
3 (22)
Preliminary Information
Operating Range
Parameter Supply voltage Recommended operating temperature Symbol Vcc1, Vcc2 Tc Value 3.1 to 4.2 -30 to +85 Unit V C
Electrical Characteristics
VCC1, CC2 = 3.4 VDC, VREF = 2.85 VDC, Vctrl1, ctrl2 = 2.0 VDC, RF = 836 MHz, Tcase = 25C, Min./Max. limits are at +25C case temperature, unless otherwise specified No. 1 1.1 1.2 1.3 1.4 Parameters CDMA mode Frequency Output power Large signal gain, high-gain mode Large signal gain, mid-gain mode Large signal gain, low-gain mode Gain variation vs. temperature Quiescent current, high gain Quiescent current, mid gain Quiescent current, low gain Output power (high) Pout Pout = +28 dBm, VCTRL1,2 = high Pout = +15 dBm, VCTRL1 = high, VCTRL2 = low Pout = 0 dBm, VCTRL1,2 = low -30 to +85C VCTRL1,2 = high VCTRL1 = high, VCTRL2 = low VCTRL1,2 = low ACPR = -49dBc, IS-95/98 standard VCTRL1,2 = high ACPR = -49dBc, IS-95/98 standard, VCTRL1 = high, VCTRL2 = low ACPR = -49dBc, IS-95/98 standard, VCTRL1,2 = low Pout = +28 dBm Pout = +28 dBm, IS-95/98 standard, VCTRL1,2 = high 2 6 2, 6 2, 6 f Pout GH GM 26 824 28 29.0 28.0 849 MHz dBm dB dB A A Test Conditions Pin Symbol Min. Typ. Max. Unit Type*
1.5 1.6 1.7 1.8 1.9 1.10
2, 6 2, 6 1, 5 1, 5 1, 5 6
GL G ICQ_hi ICQ_mid ICQ_low
21 +/-1.4 112 65 25 28
dB dB mA mA mA dBm
A C A A A C
1.11
Output power (mid)
6
12
dBm
C
1.12
Output power (low)
6
-0.5
dBm
C
1.13 1.14
Power added efficiency Adjacent channel power
6 6
PAE ACP
35.0 50...52
% dBc
A A
*) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
4 (22)
T0370
Rev. A3, 13-Dec-01
T0370
Electrical Characteristics
VCC1, CC2 = 3.4 VDC, VREF = 2.85 VDC, Vctrl1, ctrl2 = 2.0 VDC, RF = 836 MHz, Tcase = 25C, Min./Max. limits are at +25C case temperature, unless otherwise specified No. 1.15 Parameters Alternate channel power Noise power in Rx band Test Conditions Pout = +28 dBm, IS-95/98 standard, VCTRL1,2 = high Pout = +28 dBm, RBW = 30 kHz IS-95/98 standard, VCTRL1,2 = high Both ICQ-hi & ICQ-mid Pout = +28 dBm, IS-95/98 standard, VCTRL1,2 = high Pout = +28 dBm, IS-95/98 standard, VCTRL1,2 = high Pin 6 Symbol ALT Min. Typ. -57 Max. Unit dBc Type* A
1.16
6
Pnoise,Rx
-94
dBm
C
1.17 1.18
Input VSWR Second harmonic
2 6
S11 2f
1.6 : 1 -35 dBc
A A
1.19
Third harmonic
6
3f
-45
dBc
A
1.20 1.21 1.22 1.23
Supply voltage Reference voltage Bias current VREF current, ICQ-mid VREF current, ICQ-lo Leakage current Logic current Control voltage Ruggedness VCTRLl1,2 = high Mid-power mode, VCTRL1 = high, VCTRL2 = low Mid-power mode, VCTRL1,2 = low VCTRL1,2 = low, VREF = 0 VDC At VCTRL1,2 High Low No damage, POUT = 28 dBm, IS-95/98 standard, VCTRL1,2 = high No oscillations, POUT = 28 dBm, IS-95/98 standard, VCTRL1,2 = high
1, 5 3 3
VCC Vref IBias
3.1 2.8
3.4 2.85 10 5
4.2 2.9
VDC VDC mA mA
D D A
1.24 1.25 1.26 1.27 1.28
2 10 4, 8 4, 8 6 ICTRL1,2 VCTRL1,2 VCTRL1,2 1.7 0 49 2.0 0.25 4.5 0.5 10 : 1
mA A A VDC VDC A D C
1.29
Stability
6
10 : 1
A
2 2.1 2.2
AMPS mode Output power (saturated) Small signal gain Pin = +3.7dBm Vctrl1,2 = high 6 6 Pout GAMPS 31.5 28 dBm dB A A
*) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
Preliminary Information
Rev. A3, 13-Dec-01
5 (22)
Preliminary Information
Electrical Characteristics
VCC1, CC2 = 3.4 VDC, VREF = 2.85 VDC, Vctrl1, ctrl2 = 2.0 VDC, RF = 836 MHz, Tcase = 25C, Min./Max. limits are at +25C case temperature, unless otherwise specified No. 2.3 2.4 2.5 2.6 2.7 2.8 Parameters Power added efficiency Noise power in Rx band Input VSWR Second harmonic Third harmonic Supply current Test Conditions Pout = +31.5 dBm Pout = +31.5 dBm, RBW = 30 KHz All Operating Pout and VCC1, VCC2 Pout = +31.5 dBm Pout = +31.5 dBm Pout = +31.5 dBm Pin 6 6 2 6 6 1, 5 ICC Symbol PAE PNoise,Rx S11 Min. Typ. 51.4 -94 1.6 : 1 -32.5 -42.5 783 dBc dBc mA Max. Unit % dBm Type* A C A A A A
*) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
Typical Performance, CDMA High Power Mode
Test conditions: VCC1 = 3.4 VDC, VCC2 = 3.4 VDC, VCTRL1 = VCTRL2 = 2.0 V, Vref = 2.85 VDC, Pout = 28 dBm, Tcase = 25C Figure 3.
@ssvpvrpAAUrAACvtuAQrAHqr
#$
#
E A "$ @ 6 Q
&
"
& &
!$ '!# '"%$ ArrpAHC '#(
6 (22)
T0370
Rev. A3, 13-Dec-01
T0370
Figure 4.
68QSAAUrAACvtuAQrAHqr #
#"
& &
#$ p 7 q #& A S Q 8 #( 6 $
&
$"
$$ '!# '"%$ '#(
ArrpAHC
Figure 5.
6yAAUrAACvtuAQrAHqr $#
p 7 q A y 6
$%
$'
& & &
% '!# '"%$ '#(
ArrpAHC
Figure 6.
@ssvpvrpAAWppAACvtuAQrAHqr
#$
#
E A @ "$ 6 Q
9 9 9
"
!$ '!# '"%$ '#(
ArrpAHC
Preliminary Information
Rev. A3, 13-Dec-01
7 (22)
Preliminary Information
Figure 7.
68QSAAWppAACvtuAQrAHqr #
9
#"
9 9
#$ p 7 #& q A S Q #( 8 6 $
$"
$$ '!# '"%$ '#(
ArrpAHC
Figure 8.
68QSAAWppAACvtuAQrAHqr #
9
#"
9 9
#$ p 7 #& q A S Q #( 8 6 $
$"
$$ '!# '"%$ '#(
ArrpAHC
Figure 9.
GhtrATvthyABhvAAUrAACvtuAQrAHqr "!
" 7 q A v h B !'
& & &
!% '!# '"%$ '#(
ArrpAHC
8 (22)
T0370
Rev. A3, 13-Dec-01
T0370
Figure 10.
DppARvrprA8rAAUrAACvtuAQrAHqr
!$
!
6 A p p D
$
& &
$
&
" "# WppAW #!
Figure 11.
GhtrATvthyABhvAAWppAACvtuAQrAHqr
"!
" 7 q A v h B !'
9 9 9
!% '!# '"%$ ArrpAHC '#(
Preliminary Information
Rev. A3, 13-Dec-01
9 (22)
Preliminary Information
Typical Performance, CDMA Mid Power Mode
Test conditions: VCC1 = VCC2 = 3.4 VDC, VCTRL1 = 1.7 VDC, VCTRL2 = 0.5 VDC, Vref = 2.85 VDC, Pout = 12 dBm, Tcase = 25C Figure 12.
68QSAAUrAAHvqAQrAHqr #&
p 7 q A S #( Q 8 6
& & &
$ '!# '"%$ '#(
ArrpAHC
Figure 13.
6yAAUrAAHvqAQrAHqr %%
p 7 q A %' y 6
& & &
& '!# '"%$ '#(
ArrpAHC
Figure 14.
GhtrATvthyABhvAAUrAAHvqAQrAHqr "
7 q A !' v h B
& & &
!% '!# '"%$ '#(
ArrpAHC
10 (22)
T0370
Rev. A3, 13-Dec-01
T0370
Figure 15.
68QSAAWppAAHvqAQrAHqr #&
p 7 q A #( S Q 8 6
9 9 9
$ '!# '"%$ '#(
ArrpAHC
Figure 16.
6yAAWppAAHvqAQrAHqr
%%
p 7 q %' A y 6
9 9 9
& '!# '"%$ '#(
ArrpAHC
Figure 17.
GhtrATvthyABhvAAWppAAHvqAQrAHqr
"
7 q A !' v h B
9 9 9
!% '!# '"%$ ArrpAHC '#(
Preliminary Information
Rev. A3, 13-Dec-01
11 (22)
Preliminary Information
Figure 18.
DppARvrprA8rAAUrAAHvqAQrAHqr
&$
&
6 A %$ p p D
& &
%
&
$$ " "# WppAW #!
Typical Performance, CDMA Low Power Mode
Test conditions: VCC1 = VCC2 = 3.4 VDC, VCTRL1 =0.5 VDC, VCTRL2 = 0.5 V, Vref = 2.85 VDC, Pout = -0.5 dBm, Tcase = 25C Figure 19.
68QSAAUrAAGAQrAHqr
#&
&
#'
& &
#( p 7 q A S $ Q 8 6 $
$!
$" '!# '"%$ ArrpAHC '#(
Figure 20.
6yAAUrAAGAQrAHqr %#
%$ p 7 q A y 6 %%
& & &
%& '!# '"%$ '#(
ArrpAHC
12 (22)
T0370
Rev. A3, 13-Dec-01
T0370
Figure 21.
68QSAAWppAAGAQrAHqr #&
9
#'
9 9
#( p 7 q A $ S Q 8 6 $
$!
$" '!# '"%$ '#(
ArrpAHC
Figure 22.
6yAAWppAAGAQrAHqr %#
%$ p 7 q A y 6 %%
9 9 9
%& '!# '"%$ '#(
ArrpAHC
Figure 23.
GhtrATvthyABhvAAUrAAGAQrAHqr
!!
& & &
! 7 q A v h B !
( '!# '"%$ '#(
ArrpAHC
Preliminary Information
Rev. A3, 13-Dec-01
13 (22)
Preliminary Information
Figure 24.
DppARvrprAAUrAAGAQrAHqr "
6!$ A p p D
& & &
! " "# #!
ArrpAHC
Figure 25.
GhtrATvthyABhvAAWppAAGAQrAHqr !!
9 9 9
7 q A v h B
!
!
( '!# '"%$ ArrpAHC '#(
Typical Performance, AMPS Mode
Test conditions: VCC1 = VCC2 = 3.4 VDC, VCTRL1 = 1.7 VDC, VCTRL2 = 1.7 V, Vref = 2.85 VDC, Pin = 5 dBm, Tcase = 25C Figure 26.
6HQTA@ssvpvrpAAUr $%E
$#E E A @ 6 Q $!E
& & &
$E '!# '"%$ '#(
ArrpAHC
14 (22)
T0370
Rev. A3, 13-Dec-01
T0370
Figure 27.
6HQTAPAQrAAUr
"#
7 q "! A Q
& & &
" '!# '"%$ '#(
ArrpAHC
Figure 28.
6HQTA@ssvpvrpAAWpp
$%E
9 9 9
$#E E A @ 6 Q $!E
$E '!# '"%$ ArrpAHC '#(
Figure 29.
6HQTAPAQrAAWpp
"#
7 q "! A Q
9 9 9
" '!# '"%$ '#(
ArrpAHC
Preliminary Information
Rev. A3, 13-Dec-01
15 (22)
Preliminary Information
PA Quiescent Current as a Function of CMOS Logic Signals Vctrl1 and Vctrl2
Digital Bias State High power mode / AMPS mode Medium power mode Low power mode Vctrl1 High High Low Vctrl2 High Low Low Icq 112 mA 65 mA 25 mA
Equivalent Circuits on Pins
Figure 30. RF input
RFin
Schematic of Demo Board
Figure 31.
Vcc1 Vctrl1
C6 C1 1 2 87 34 6 5 C4 RFout C2
RFin
Vcc2
C7
C3
C5
Bill of Materials of Demo Board
Component PA Module RF Connector Capacitor Capacitor Note: Reference IC1 J2, J3 C1, C2, C3, C4, C5 C6, C7 100 nF 10 F 0402 12101) Vendor Atmel-WM Part Number / Remark T0370 Value Size / Package 8 pin 6 mm square
1. may vary do to printed circuit board layout and material
16 (22)
T0370
Rev. A3, 13-Dec-01
Vref Vctrl2
T0370
Layout of Demo Board
Figure 32. Dimensions in inches
Preliminary Information
Rev. A3, 13-Dec-01
17 (22)
Preliminary Information
Recommended PCB Layout Footprint for 8-Pin Module Plastic Package
Figure 33.
J Pin 1 U K
Dimensions D E J mm 6.35 6.35 1.17 1.03 0.95 1.17 1.60 3.06 3.20 1.60 in 0.250 0.250 0.046 0.040 0.037 0.046 0.063 0.120 0.126 0.063
D S N
CL
K L M N S T U
M L T E
Note:
Only ground signal traces are allowed directly under the package.
18 (22)
T0370
Rev. A3, 13-Dec-01
T0370
Package Information
Figure 34. Dimensions in mm
3,1
723 9,(:
02/' 68%675$7(
6,'( 9,(:

%27720 9,(:
Designation A A1 A2 D E J K L
Description OVERALL HEIGHT SUBSTRATE THICKNESS MOLD THICKNESS PACKAGE LENGTH PACKAGE WIDTH TERMINAL SOLDER MASK OPENING LENGTH (FOR ALL TERMINALS) TERMINAL SOLDER MASK OPENING WIDTH FOR TERMINAL 1, 3, 5, 7 TERMINAL SOLDER MASK OPENING WIDTH FOR TERMINAL 2, 4, 6, 8
Dimension 1.42 0.32 1.10 6.0 6.0 0.975 0.835 0.91 +/-0.09 mm +/-0.05 mm +/-0.05 mm +/-0.1 mm +/-0.1 mm +/-0.035 mm +/-0.035 mm +/-0.035 mm
Note
Preliminary Information
Rev. A3, 13-Dec-01
19 (22)
Preliminary Information
Designation M P T S R Q E e1 Description DISTANCE BETWEEN METAL PAD AND SOLDER MASK DISTANCE BETWEEN METAL PAD AND PACKAGE EDGE GND SOLDER MASK OPENING LENGTH GND SOLDER MASK OPENING WIDTH DISTANCE BETWEEN MASK OPENING AND PACKAGE EDGE DISTANCE BETWEEN MASK OPENING AND PACKAGE EDGE TERMINAL PITCH FOR TERMINAL 3-4-5 AND 7-8-1 TERMINAL PITCH FOR TERMINAL 1-2-3 AND 5-6-7 Dimension 0.075 0.05 3.2 3.06 1.39 1.40 2.513 2.583 +/-0.02 mm +/-0.02 mm +/-0.1 mm +/-0.1 mm +/-0.2 mm +/-0.2 mm mm mm Note
20 (22)
T0370
Rev. A3, 13-Dec-01
T0370
Ozone Depleting Substances Policy Statement
It is the policy of Atmel Germany GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Atmel Germany GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Atmel Germany GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
Preliminary Information
Rev. A3, 13-Dec-01
21 (22)
Atmel Sales Offices
France
3, Avenue du Centre 78054 St.-Quentin-en-Yvelines Cedex Tel: +33 1 30 60 70 00 Fax: +33 1 30 60 71 11
Sweden
Kavallerivaegen 24, Rissne 17402 Sundbyberg Tel: +46 8 587 48 800 Fax: +46 8 587 48 850
Hong Kong
Room #1219, Chinachem Golden Plaza 77 Mody Road, Tsimhatsui East East Kowloon, Hong Kong Tel: +852 23 789 789 Fax: +852 23 755 733
Germany
Erfurter Strasse 31 85386 Eching Tel: +49 89 319 70 0 Fax: +49 89 319 46 21 Kruppstrasse 6 45128 Essen Tel: +49 201 247 30 0 Fax: +49 201 247 30 47 Theresienstrasse 2 74072 Heilbronn Tel: +49 7131 67 36 36 Fax: +49 7131 67 31 63
United Kingdom
Easthampstead Road Bracknell Berkshire RG12 1LX Tel: +44 1344 707 300 Fax: +44 1344 427 371
Korea
25-4, Yoido-Dong, Suite 605, Singsong Bldg. Youngdeungpo-Ku 150-010 Seoul Tel: +822 785 1136 Fax: +822 785 1137
USA Western
2325 Orchard Parkway San Jose, California 95131 Tel: +1 408 441 0311 Fax: +1 408 436 4200
Rep. of Singapore
Keppel Building #03-00 25 Tampines Street 92, Singapore 528877 Tel: +65 260 8223 Fax: +65 787 9819
USA Eastern
1465 Route 31, Fifth floor Annandale New Jersey 08801 Tel: +1 908 848 5208 Fax: +1 908 848 5232
Italy
Via Grosio, 10/8 20151 Milano Tel: +39 02 38 03 71 Fax: +39 02 38 03 72 34
Taiwan, R.O.C.
8F-2, 266 Sec.1 Wen Hwa 2 Rd. Lin Kou Hsiang, 244 Taipei Hsien Tel: +886 2 2609 5581 Fax: +886 2 2600 2735
Spain
Principe de Vergara, 112 28002 Madrid Tel: +34 91 564 51 81 Fax: +34 91 562 75 14
Japan
Tonetsushinkawa Bldg. 1-24-8 Shinkawa Chuo Ku Tokyo 104-0033 Tel: +81 3 3523 3551 Fax: +81 3 3523 7581
Web Site
http://www.atmel-wm.com
(c) Atmel Germany GmbH 2001. Atmel Germany GmbH makes no warranty for the use of its products, other than those expressly contained in the Company's standard warranty which is detailed in Atmel Germany GmbH's Terms and Conditions. The Company assumes no responsibility for any errors which may appear in this document, reserves the right to change devices or specifications detailed herein at any time without notice, and does not make any commitment to update the information contained herein. No licenses to patents or other intellectual property of Atmel Germany GmbH are granted by the Company in connection with the sale of Atmel Germany GmbH products, expressly or by implication. Atmel Germany GmbH's products are not authorized for use as critical components in life support devices or systems. Data sheets can also be retrieved from the Internet: http://www.atmel-wm.com
Rev. A3, 13-Dec-01

▲Up To Search▲

Price & Availability of T0370NBSP

	To Download T0370NBSP Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .