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WS512K8-XCX
HI-RELIABILITY PRODUCT
512Kx8 SRAM MODULE, SMD 5962-92078
FIG. 1
PIN CONFIGURATION TOP VIEW
A18 A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 GND
FEATURES
s Access Times 20, 25, 35, 45ns s Standard Microcircuit Drawing, 5962-92078 s MIL-STD-883 Compliant Devices Available s Rad Tolerant Devices Available s JEDEC Standard 32 pin, Hermetic Ceramic DIP (Package 300) s Commercial, Industrial andMilitary Temperature Range (-55C to +125C) s Organized as 512K x 8 s 5 Volt Power Supply s Low Power CMOS s TTL Compatible Inputs and Outputs s Battery Back-Up Operation
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16
32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17
VCC A15 A17 WE A13 A8 A9 A11 OE A10 CS I/O7 I/O6 I/O5 I/O4 I/O3
PIN DESCRIPTION
A0-18 I/O0-7 CS OE WE VCC GND Address Inputs Data Input/Output Chip Select Output Enable Write Enable +5.0V Power Ground
BLOCK DIAGRAM
A0-16 I/O0-7
WE OE
128K x 8
128K x 8
128K x 8
128K x 8
A17 A18
CS Decoder
May 1999 Rev. 2
1
White Electronic Designs Corporation * Phoenix, AZ * (602) 437-1520
WS512K8-XCX
ABSOLUTE MAXIMUM RATINGS
Parameter Operating Temperature Storage Temperature Signal Voltage Relative to GND Junction Temperature Supply Voltage Symbol TA TSTG VG TJ VCC -0.5 Min -55 -65 -0.5 Max +125 +150 Vcc+0.5 150 7.0 Unit C C V C V CS H L L L OE X L X H WE X H L H
TRUTH TABLE
Mode Standby Read Write Out Disable Data I/O High Z Data Out Data In High Z Power Standby Active Active Active
RECOMMENDED OPERATING CONDITIONS
Parameter Supply Voltage Input High Voltage Input Low Voltage Operating Temp. (Mil.) Symbol VCC VIH VIL TA Min 4.5 2.2 -0.5 -55 Max 5.5 VCC + 0.3 +0.8 +125 Unit V V V C Parameter Input capacitance Output capicitance
CAPACITANCE (TA = +25C)
Symbol CIN COUT Condition VIN = 0V, f = 1.0MHz VOUT = 0V, f = 1.0MHz Max 45 45 Unit pF pF
This parameter is guaranteed by design but not tested.
DC CHARACTERISTICS (VCC = 5.0V, GND = 0V, TA = -55C to +125C)
Parameter Symbol Conditions -20 Min Max 10 10 210 80 0.4 2.4 -25 Min Max 10 10 210 60 0.4 -35 -45 Min Max Min Max 10 10 10 10 210 210 60 55 0.4 0.4 2.4 2.4 Units A A mA mA V V
Input Leakage Current ILI VCC = 5.5, VIN = GND to VCC Output Leakage Current ILO CS = VIH, OE = VIH, VOUT = GND to VCC Operating Supply Current ICC CS = VIL, OE = VIH, f = 5MHz, Vcc = 5.5 Standby Current ISB CS = VIH, OE = VIH, f = 5MHz Output Low Voltage VOL IOL = 8mA, Vcc = 4.5 Output High Voltage VOH IOH = -4.0mA, Vcc = 4.5 NOTE: DC test conditions: VIH = VCC -0.3V, VIL = 0.3V
2.4
DATA RETENTION CHARACTERISTICS (TA = -55C to +125C)
Parameter Data Retention Supply Voltage Data Retention Current Symbol VDR ICCDR1 Conditions Min CS VCC -0.2V VCC = 3V 2.0 8.0 -20 Typ Max 5.5 12.8 Min 2.0 8.0 -25 Typ Max 5.5 12.8 Min 2.0 -35 Typ Max Min 5.5 8.0 12.8 2.0 -45 Typ Max 5.5 8.0 12.8 V mA Units
FIG. 2
AC TEST CIRCUIT
Current Source I OL
AC TEST CONDITIONS
Parameter Input Pulse Levels Input Rise and Fall Input and Output Reference Level
D.U.T. VZ
Typ VIL = 0, VIH = 3.0 5 1.5 1.5
Unit V ns V V
1.5V
Output Timing Reference Level
C eff = 50 pf
(Bipolar Supply)
I OH Current Source
NOTES: VZ is programmable from -2V to +7V. IOL & IOH programmable from 0 to 16mA. Tester Impedance Z0 = 75 . VZ is typically the midpoint of VOH and VOL. IOL & IOH are adjusted to simulate a typical resistive load circuit. ATE tester includes jig capacitance.
White Electronic Designs Corporation * Phoenix, AZ * (602) 437-1520
2
WS512K8-XCX
AC CHARACTERISTICS (VCC = 5.0V, GND = 0V, TA = -55C to +125C)
Parameter Read Cycle Read Cycle Time Address Access Time Output Hold from Address Change Chip Select Access Time Output Enable to Output Valid Chip Select to Output in Low Z Output Enable to Output in Low Z Chip Disable to Output in High Z Output Disable to Output in High Z tRC tAA tOH tACS tOE tCLZ 1 tOLZ 1 tCHZ 1 tOHZ 1 3 0 15 12 3 20 10 3 0 17 15 Symbol Min 20 20 3 25 10 3 0 20 20 -20 Max Min 25 25 3 35 25 3 0 30 25 -25 Max Min 35 35 3 45 35 -35 Max Min 45 45 -45 Max ns ns ns ns ns ns ns ns ns Units
1. This parameter is guaranteed by design but not tested.
AC CHARACTERISTICS (VCC = 5.0V, GND =0V, TA = -55C to +125C)
Parameter Write Cycle Write Cycle Time Chip Select to End of Write Address Valid to End of Write Data Valid to End of Write Write Pulse Width Address Setup Time Address Hold Time Output Active from End of Write Write Enable to Output in High Z Data Hold Time tWC tCW tAW tDW tWP tAS tAH tOW 1 tWHZ 1 tDH 1 Symbol Min 20 16 16 15 16 2 2 4 10 -20 Max Min 25 20 20 15 20 2 2 5 0 1 15 -25 Max Min 35 25 25 20 25 2 2 5 0 1 20 -35 Max Min 45 30 30 25 30 2 2 5 0 1 25 -45 Max ns ns ns ns ns ns ns ns ns ns Units
1. This parameter is guaranteed by design but not tested.
3
White Electronic Designs Corporation * Phoenix, AZ * (602) 437-1520
WS512K8-XCX
FIG. 3
TIMING WAVEFORM - READ CYCLE
ADDRESS
tRC tAA
CS
tRC
ADDRESS
tACS tCLZ
OE
tCHZ
tAA tOH
DATA I/O
PREVIOUS DATA VALID DATA VALID
tOE tOLZ
DATA I/O
HIGH IMPEDANCE
tOHZ
DATA VALID
READ CYCLE 1 (CS = OE = VIL, WE = VIH)
READ CYCLE 2 (WE = VIH)
FIG. 4
WRITE CYCLE - WE CONTROLLED
tWC
ADDRESS
tAW tCW
CS
tAH
tAS
WE
tWP tOW tWHZ tDW tDH
DATA I/O
DATA VALID
WRITE CYCLE 1, WE CONTROLLED
FIG. 5
WRITE CYCLE - CS CONTROLLED
ADDRESS
tWC
WS32K32-XHX
tAS tAW tCW tAH
CS
tWP
WE
tDW
DATA I/O
DATA VALID
tDH
WRITE CYCLE 2, CS CONTROLLED
White Electronic Designs Corporation * Phoenix, AZ * (602) 437-1520
4
WS512K8-XCX
PACKAGE 300:
32 PIN, CERAMIC DIP, SINGLE CAVITY SIDE BRAZED
42.4 (1.670) 0.4 (0.016) 15.04 (0.592) 0.3 (0.012) 4.34 (0.171) 0.79 (0.031) PIN 1 IDENTIFIER 3.2 (0.125) MIN 0.84 (0.033) 0.4 (0.014) 2.5 (0.100) TYP 1.27 (0.050) 0.1 (0.005) 0.46 (0.018) 0.05 (0.002) 0.25 (0.010) 0.05 (0.002) 15.25 (0.600) 0.25 (0.010)
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
5
White Electronic Designs Corporation * Phoenix, AZ * (602) 437-1520
WS512K8-XCX
ORDERING INFORMATION W S 512K 8 - XXX C X X
LEAD FINISH: Blank = Gold plated leads A = Solder dip leads DEVICE GRADE: Q = MIL-STD-883 Compliant M = Military Screened I = Industrial C = Commercial PACKAGE: C = Ceramic 0.600" DIP (Package 300) ACCESS TIME (ns) ORGANIZATION, 512K x 8 SRAM WHITE MICROELECTRONICS -55C to +125C -40C to +85C 0C to +70C
DEVICE TYPE
512K x 8 SRAM 512K x 8 SRAM 512K x 8 SRAM 512K x 8 SRAM
SPEED
45ns 35ns 25ns 20ns
PACKAGE
32 pin DIP 32 pin DIP 32 pin DIP 32 pin DIP
SMD NO.
5962-92078 06HTX 5962-92078 07HTX 5962-92078 08HTX 5962-92078 09HTX
White Electronic Designs Corporation * Phoenix, AZ * (602) 437-1520
6

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