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| PNP Silicon RF Transistor q q q q BF 550 For common emitter amplifier stages up to 300 MHz For mixer applications in AM/FM radios and VHF TV tuners Low feedback capacitance due to shield diffusion Controlled low output conductance Type BF 550 Marking LA Ordering Code (tape and reel) Q62702-F944 Pin Configuration 1 2 3 B E C Package1) SOT-23 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation, TA 25 C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Rth JA Symbol VCE0 VCB0 VEB0 IC IB Ptot Tj Tstg Values 40 40 4 25 5 280 150 - 65 ... + 150 Unit V mA mW C 450 K/W 1) 2) For detailed information see chapter Package Outlines. Package mounted on alumina 15 mm x 16.7 mm x 0.7 mm. Semiconductor Group 1 07.94 BF 550 Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-base breakdown voltage IC = 10 A, IE = 0 Emitter-base breakdown voltage IE = 10 A, IC = 0 Collector cutoff current VCB = 30 V, IE = 0 DC current gain IC = 1 mA, VCE = 10 V Base-emitter voltage IC = 1 mA, VCE = 10 V AC Characteristics Transition frequency IC = 1 mA, VCE = 10 V, f = 100 MHz Collector-base capacitance VCB = 10 V, VBE = 0 V, f = 1 MHz Collector-emitter capacitance VCE = 10 V, VBE = 0 V, f = 1 MHz Noise figure VCE = 10 V IC = 1 mA, f = 100 kHz, RS = 300 IC = 2 mA, f = 100 MHz, RS = 60 Y parameters, common emitter IC = 1 mA, VCE = 10 V f = 0.45 ... 10 MHz fT Ccb Cce F - - 2 3.4 - - - - - 350 0.33 0.67 - - - dB MHz pF V(BR) CE0 V(BR) CB0 V(BR) EB0 ICB0 hFE VBE 40 40 4 - 50 - - - - - - 0.72 - - - 100 250 - nA - V V Values typ. max. Unit f = 500 kHz f = 10 MHz g11e C11e I y21e I C22e g22e g22e - - - - - - 550 17 35 1.3 5 5 - - - - 8 10 S pF mS pF S S Semiconductor Group 2 BF 550 Total power dissipation Ptot = f (TA) DC current gain hFE = f (IC) VCE = 10 V Collector current IC = f (VBE) VCE = 10 V Collector-emitter saturation voltage VCEsat = f (IC) hFE = 10 Semiconductor Group 3 BF 550 Collector cutoff current ICB0 = f (TA) VCB = 30 V Transition frequency fT = f (IC) f = 100 MHz Collector-base capacitance Ccb = f (VCB) f = 1 MHz Output conductance g22e = f (IC) VCE = 10 V, f = 500 kHz Semiconductor Group 4 BF 550 Forward transfer admittance I y21e I = f (IC) f = 10.7 MHz Forward transfer admittance y21e VCE = 10 V Semiconductor Group 5 |
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