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DISCRETE SEMICONDUCTORS
DATA SHEET
BFT92 PNP 5 GHz wideband transistor
Product specification File under Discrete Semiconductors, SC14 November 1992
Philips Semiconductors
Product specification
PNP 5 GHz wideband transistor
DESCRIPTION PNP transistor in a plastic SOT23 envelope. It is primarily intended for use in RF wideband amplifiers, such as in aerial amplifiers, radar systems, oscilloscopes, spectrum analyzers, etc. The transistor features low intermodulation distortion and high power gain; due to its very high transition frequency, it also has excellent wideband properties and low noise up to high frequencies. NPN complements are BFR92 and BFR92A. PINNING PIN 1 2 3 base emitter collector
1 Top view
BFT92
DESCRIPTION Code: W1p
fpage
3
2
MSB003
Fig.1 SOT23.
QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot fT Cre GUM F dim PARAMETER collector-base voltage collector-emitter voltage DC collector current total power dissipation transition frequency feedback capacitance maximum unilateral power gain noise figure intermodulation distortion up to Ts = 95 C; note 1 IC = -14 mA; VCE = -10 V; f = 500 MHz IC = -2 mA; VCE = -10 V; f = 1 MHz IC = -14 mA; VCE = -10 V; f = 500 MHz; Tamb = 25 C IC = -5 mA; VCE = -10 V; f = 500 MHz; Tamb = 25 C IC = -14 mA; VCE = -10 V; RL = 75 ; Vo = 150 mV; Tamb = 25 C; f(p+q-r) = 493.25 MHz open emitter open base CONDITIONS TYP. - - - - 5 0.7 18 2.5 -60 MAX. -20 -15 -25 300 - - - - - UNIT V V mA mW GHz pF dB dB dB
Note 1. Ts is the temperature at the soldering point of the collector tab.
November 1992
2
Philips Semiconductors
Product specification
PNP 5 GHz wideband transistor
LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM Ptot Tstg Tj PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage DC collector current peak collector current total power dissipation storage temperature junction temperature f > 1 MHz up to Ts = 95 C; note 1 CONDITIONS open emitter open base open collector - - - - - - -65 - MIN. MAX. -20 -15 -2 -25 -35 300 150 175
BFT92
UNIT V V V mA mA mW C C
THERMAL RESISTANCE SYMBOL Rth j-s Note 1. Ts is the temperature at the soldering point of the collector tab. PARAMETER thermal resistance from junction to soldering point CONDITIONS up to Ts = 95 C; note 1 THERMAL RESISTANCE 260 K/W
November 1992
3
Philips Semiconductors
Product specification
PNP 5 GHz wideband transistor
CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL ICBO hFE fT Cc Ce Cre GUM F Vo Notes 1. GUM is the maximum unilateral power gain, assuming S12 is zero and S 21 G UM = 10 log ------------------------------------------------------------- dB. 2 2 1 - S 11 1 - S 22 2. dim = -60 dB (DIN 45004B); IC = -14 mA; VCE = -10 V; RL = 75 ; Vp = Vo at dim = -60 dB; fp = 495.25 MHz; Vq = Vo -6 dB; fq = 503.25 MHz; Vr = Vo -6 dB; fr = 505.25 MHz; measured at f(p+q-r) = 493.25 MHz.
2
BFT92
PARAMETER collector cut-off current DC current gain transition frequency collector capacitance emitter capacitance feedback capacitance maximum unilateral power gain (note 1) noise figure output voltage
CONDITIONS IE = 0; VCB = -10 V; IC = -14 mA; VCE = -10 V IC = -14 mA; VCE = -10 V; f = 500 MHz IE = ie = 0; VCB = -10 V; f = 1 MHz IC = ic = 0; VEB = -0.5 V; f = 1 MHz IC = -2 mA; VCE = -10 V; f = 1 MHz IC = -14 mA; VCE = -10 V; f = 500 MHz; Tamb = 25 C IC = -5 mA; VCE = -10 V; f = 500 MHz; Tamb = 25 C note 2
MIN. TYP. MAX. - 20 - - - - - - - - 50 5 0.75 0.8 0.7 18 2.5 150 -50 - - - - - - - -
UNIT nA GHz pF pF pF dB dB mV
November 1992
4
Philips Semiconductors
Product specification
PNP 5 GHz wideband transistor
BFT92
MEA347
handbook, halfpage
24 V
handbook, halfpage
100
390
L3
3.9 k 300
820
h FE 75
L2 680 pF 75
680 pF L1
680 pF 75 DUT
50
25 16
MEA919
0 0 10 20 -I C (mA) 30
L2 = L3 = 5 H Ferroxcube choke, catalogue number 3122 108 20150. L1 = 4 turns 0.35 mm copper wire; winding pitch 1 mm; internal diameter 4 mm.
VCE = -10 V; Tj = 25 C.
Fig.2 Intermodulation distortion test circuit.
Fig.3
DC current gain as a function of collector current.
MEA920
handbook, halfpage
1
MEA344
Cc (pF)
handbook, halfpage
6
0.8
fT (GHz) 4
0.6
0.4 2 0.2
0 0 10 -V CB (V)
20
0 0 10 20 -I C (mA) 30
IE = ie = 0; f = 1 MHz; Tj = 25 C.
VCE = -10 V; f = 500 MHz; Tj = 25 C.
Fig.4
Collector capacitance as a function of collector-base voltage.
Fig.5
Transition frequency as a function of collector current.
November 1992
5
Philips Semiconductors
Product specification
PNP 5 GHz wideband transistor
BFT92
MEA921
handbook, halfpage
5
handbook, halfpage
6
MEA465
F (dB) 4
F (dB)
5
4 3 3 2 2 1
1
0 0 5 10 15 20 25 I C (mA)
0 10 -1
1
f (GHz)
10
VCE = -10 V; Zs = opt.; f = 500 MHz; Tamb = 25 C.
Ic = -2 mA; VCE = -10 V; Zs = opt.; Tamb = 25 C.
Fig.6
Minimum noise figure as a function of collector current.
Fig.7
Minimum noise figure as a function of frequency.
November 1992
6
Philips Semiconductors
Product specification
PNP 5 GHz wideband transistor
PACKAGE OUTLINE Plastic surface mounted package; 3 leads
BFT92
SOT23
D
B
E
A
X
HE
vMA
3
Q A A1
1
e1 e bp
2
wMB detail X Lp
c
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 max. 0.1 bp 0.48 0.38 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 e 1.9 e1 0.95 HE 2.5 2.1 Lp 0.45 0.15 Q 0.55 0.45 v 0.2 w 0.1
OUTLINE VERSION SOT23
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-02-28
November 1992
7
Philips Semiconductors
Product specification
PNP 5 GHz wideband transistor
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BFT92
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
November 1992
8

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