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| UHF POWER TRANSISTOR DRF1402F NPN SiGe RF TRANSISTOR The DRF1402F is a low cost, NPN medium power SiGe HBT(Hetero-Junction Bipolar Transistor) encapsulated in a plastic SOT-89 SMD package. The DRF1402F can be used as a driver device or an output device, depending on the specific application 4 FEATURES o 4.8 Volt operation o P1dB 28 dBm @f=465MHz o Power gain 10 dB @f=465MHz PIN CONFIGURATION APPLICATIONS o Hand-held radio equipment in common emitter class-AB operation in 450 MHz communication band. PIN NO 1 2 3 4 SYMBOL B C E C DESCRIPTION base collector emitter collector MAXIMUM RATINGS SYMBOL VCBO VCEO VEBO Ic PT TSTG TJ PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Total Power Dissipation Storage Temperature Operating Junction Temperature Ts = 60 ; note 1 CONDITION Open Emitter Open Base Open Collector VALUE 20 8 4 350 1 -65 ~ 150 150 Unit V V V mA W www.tachyonics.co.kr - 1/6 - Sep-03-2002 2nd Edition UHF POWER TRANSISTOR DRF1402F THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER thermal resistance from junction to soldering point CONDITION PT=1W; Ts=60 ;note1 VALUE 55 Unit K/W * Note 1. Ts is temperature at the soldering point of the collector pin. QUICK REFERENCE DATA RF performance at Ts 60 Mode of Operation CW, class-AB in common emitter test circuit (see Fig 8.) VCE [V] 4.8 PL [mW] 630 GP [dB] 10 [%] f [MHz] 465 C www.tachyonics.co.kr - 2/6 - Sep-03-2002 2nd Edition UHF POWER TRANSISTOR DRF1402F DC CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage SYMBOL BVCBO BVCEO BVEBO Is hFE Cc CONDITION open emitter open base open collector MIN. 20 8 3 0.1 60 MAX. UNIT V V V mA Collector leakage current DC current gain Collector capacitance 4.5 pF 160 Hfe 140 120 100 80 60 40 20 6 5 4 3 2 0 0.00 0 0.10 0.20 0.30 0.40 Ic(A) 0.50 2 4 6 8 10 Fig 1. DC Current gain v.s Collector current Fig 2. Collector-base capacitance v.s Collectorbase voltage(DC) www.tachyonics.co.kr - 3/6 - Sep-03-2002 2nd Edition UHF POWER TRANSISTOR DRF1402F APPLICATION INFORMATION RF performance at Ts 60 Mode of Operation CW, class-AB in common emitter configuration. VCE [V] 4.8 PL [mW] 630 GP [dB] 10 C f [MHz] 465 [%] DRF1402F Source/Load Impedance as a frequency VCE = 4.8V, ICQ = 5mA, Pout = 28dBm ZS [] ZL [] Freq. [MHz] 440 450 460 470 Rs 17.34 17.21 17.12 17.09 Xs 6.91 7.89 8.90 9.95 RL 22.21 19.31 17.20 15.66 XL -0.59 2.58 7.07 19.00 DRF1402F Transister Impedance ZL Zs Fig 5. Source Impedance (series components) as a freq, typical values. Fig 6. Load Impedance (series components) as a freq, typical values. www.tachyonics.co.kr - 4/6 - Sep-03-2002 2nd Edition UHF POWER TRANSISTOR DRF1402F Part List C1, C7,C10,C11 C3,C4 C2 C5 C6 C9,C12 C8,C13 L1(Chip L : 1608) L2,L3,L4 (Air Coil) L5,L6 (Air Coil) Air Coil Diameter 470pF 6pF 8pF 7pF 12pF 1nF 100nF 8.2nH 3turn 8turn 2 mm Fig 7. DRF1402F Test Circuit Board Layout @ f = 465MHz Test board : FR4 glass epoxy board, dielectric constant = 4.5, thickness = 0.8 mm Test condition : CW test, VCC = 4.8 V, ICQ = 5 mA, frequency = 465 MHz. Fig 8. Test Circuit Schematic Diagram @f = 465MHz www.tachyonics.co.kr - 5/6 - Sep-03-2002 2nd Edition UHF POWER TRANSISTOR DRF1402F PACKAGE DIMENSION Fig 9. SOT-89 Package dimension www.tachyonics.co.kr - 6/6 - Sep-03-2002 2nd Edition |
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