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| v00.0900 MICROWAVE CORPORATION HMC320MS8G GaAs MMIC LOW NOISE AMPLIFIER , 5.0 - 6.0 GHz Features Selectable Functionality: LNA, Driver, or LO Buffer Amp Adjustable Input IP3 Up to +10 dBm +3V Operation Ultra Small 8 Lead MSOP: 14.8 mm2 x 1mm High 8 AMPLIFIERS - SMT Typical Applications The HMC320MS8G is ideal for: * UNII * HiperLAN Functional Diagram General Description The HMC320MS8G is a low cost C-band fixed gain Low Noise Amplifier (LNA). The HMC320MS8G operates using a single positive supply that can be set between +3V and +5V. With +3V bias, the LNA provides a noise figure of 2.5dB, 12dB gain and better than 10dB return loss across the UNII band. The HMC320MS8G also features adaptive baising that allows the user to select the optimal P1dB performance for their system using an external set resistor on the "RES" pin. P1dB performance can be set between a range of +1 dBm to +13dBm. The low cost LNA uses an 8-leaded MSOP ground base surface mount plastic package, which occupies less than 14.8mm2. Electrical Specifications, TA = +25 C, Vdd = +3V Parameter Low Power* (VSET = 0V, Idd = 7 mA) Min. Frequency Range Gain Gain Variation over Temperature Gain Flatness Noise Figure Input Return Loss Output Return Loss Output Power for 1 dB Compression (P1dB) Input Third Order Intercept Point (IIP3) Supply Current (Idd) 4 7 -4 -3 8 Typ. 5-6 10 0.025 0.5 2.7 10 13 -1 1 7 3.8 4 10 6 4 16 0.035 8 Max. Medium Power* (VSET = 3V, Idd = 25 mA) Min. Typ. 5-6 12 0.025 1.0 2.5 10 18 9 8 25 3.8 4 10 9 6 16 0.035 9 Max. High Power* (VSET = 3V, Idd = 40 mA) Min. Typ. 5-6 13 0.025 1.5 2.6 10 20 12 10 40 3.8 16 0.035 Max. GHz dB dB/C dB dB dB dB dBm dBm mA Units * RBIAS resistor value sets current. See adaptive biasing application note. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 8 - 92 MICROWAVE CORPORATION v00.0900 HMC320MS8G GaAs MMIC LOW NOISE AMPLIFIER , 5.0 - 6.0 GHz Broadband Gain & Return Loss Medium Power Bias 15 10 5 Gain @ Three Bias Conditions 16 14 12 8 AMPLIFIERS - SMT 8 - 93 RESPONSE (dB) -5 -10 -15 -20 -25 -30 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5 8 FREQUENCY (GHz) S11 S21 S22 GAIN (dB) 0 10 8 6 4 2 0 4 4.5 5 5.5 6 6.5 7 FREQUENCY (GHz) Low Power Bias Medium Power Bias High Power Bias Gain vs. Temperature Medium Power Bias 16 14 12 Input Return Loss @ Three Bias Conditions 0 -5 -10 -15 -20 -25 -30 Low Power Bias Medium Power Bias High Power Bias GAIN (dB) 10 8 6 4 2 0 4 4.5 5 5.5 6 6.5 7 FREQUENCY (GHz) +25 C +85 C -40 C INPUT RETURN LOSS (dB) 4 4.5 5 5.5 6 6.5 7 FREQUENCY (GHz) Noise Figure vs. Temperature Medium Power Bias 5 4.5 Output Return Loss @ Three Bias Conditions 0 Low Power Bias Medium Power Bias High Power Bias OUTPUT RETURN LOSS (dB) 5.5 6 6.5 4 -5 -10 -15 -20 -25 -30 NOISE FIGURE (dB) 3.5 3 2.5 2 1.5 1 0.5 0 4.5 5 +25 C +85 C -40 C 4 4.5 5 5.5 6 6.5 7 FREQUENCY (GHz) FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com MICROWAVE CORPORATION v00.0900 HMC320MS8G GaAs MMIC LOW NOISE AMPLIFIER , 5.0 - 6.0 GHz GaAs MMIC SUB-HARMONICALLY PUMPED MIXER 17 - 25 GHz 8 AMPLIFIERS - SMT Noise Figure @ Three Bias Conditions 5 4.5 4 Input IP3 @ Three Bias Conditions 15 13 11 NOISE FIGURE (dB) 3 2.5 2 1.5 1 0.5 0 4.5 5 5.5 FREQUENCY (GHz) Low Power Bias Medium Power Bias High Power Bias INPUT IP3 (dBm) 3.5 9 7 5 3 1 -1 -3 Low Power Bias Medium Power Bias High Power Bias 6 6.5 -5 4.5 5 5.5 FREQUENCY (GHz) 6 6.5 Output 1dB Compression @ Three Bias Conditions 15 13 11 9 Reverse Isolation @ Three Bias Conditions 0 -10 -20 -30 -40 -50 -60 Low Power Bias Medium Power Bias High Power Bias 7 5 3 1 -1 -3 -5 4.5 5 5.5 FREQUENCY (GHz) 6 6.5 Low Power Bias Medium Power Bias High Power Bias REVERSE ISOLATION (dB) P1dB (dBm) 4 4.5 5 5.5 6 6.5 7 FREQUENCY (GHz) 8 - 94 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com MICROWAVE CORPORATION v00.0900 HMC320MS8G GaAs MMIC LOW NOISE AMPLIFIER , 5.0 - 6.0 GHz Adaptive Biasing Optimizing P1dB Performance The bias level may be changed to adjust the P1dB and return loss performance. The table below contains the HMC320MS8G RF performance as a function of various VSET and RBIAS settings. It will be necessary for the VSET voltage source to provide 100uA of current to the amplifier. The Idd and Vdd quiescent performance will not change as a function of changing the VSET voltage. 8 AMPLIFIERS - SMT 8 - 95 RF Performance at 5.8 GHz (Vdd = +3V) VSET (VDC) 0 3 3 3 RBIAS Resistor Between Pin 3 and GND (Ohms) 174 23 7 GND (No Resistor) Idd (mA) Output P1dB (dBm) 1.0 9.0 13.0 14.0 Output Return Loss (dB) 16.0 12.0 15.0 15.0 7 25 40 60 Applying the adaptive biasing A dynamically controlled bias can be implemented with this design. A typical application wil include sensing an RF signal level and then adjusting the VSET. The bias adjustment can be accomplished by either analog or digitals means, after the RF signal has been detected and translated to a DC voltage using external power detection circuitry. Schematic For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com MICROWAVE CORPORATION v00.0900 HMC320MS8G GaAs MMIC LOW NOISE AMPLIFIER , 5.0 - 6.0 GHz 8 AMPLIFIERS - SMT Absolute Maximum Ratings Drain Bias Voltage (Vdd) Control Voltage Range (VSET) RF Input Power (RFin)(Vdd = +3.0 Vdc) Channel Temperature Continuous Pdiss (T = 85 C) (derate 2.98 mW/C above 85 C) Thermal Resistance (channel to ground paddle) Storage Temperature Operating Temperature +7.0 Vdc 0 to Vdd +5 dBm 150 C 0.194 W Truth Table VSET 0V 3V 3V Operating Current Idd 7 mA 25 mA 40 mA Operating State Low Power Medium Power High Power Resistor Rbias 174 Ohm 23 Ohm 7 Ohm 336 C/W -65 to +150 C -40 to +85 C Set external bias resistor (RBIAS) to achieve desired operating current, 0 < RBIAS < 200 Ohm. Outline Drawing NOTES: 1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED PLASTIC SILICA AND SILICON IMPREGNATED. 2. LEADFRAME MATERIAL: COPPER ALLOY 3. LEADFRAME PLATING: Sn/Pb SOLDER 4. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. 6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE. 7. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 8 - 96 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com MICROWAVE CORPORATION v00.0900 HMC320MS8G GaAs MMIC LOW NOISE AMPLIFIER , 5.0 - 6.0 GHz Evaluation PCB 8 AMPLIFIERS - SMT List of Material Item J1, J2 J3, J4 R1 U1 PCB* Description PC Mount SMA Connector DC Pins 200 Ohm Potentiometer HMC320MS8G Amplifier Evaluation PCB 1.6" x 1.5" *Circuit Board Material: Rogers 4350 The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation circuit board shown is available from Hittite upon request. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 8 - 97 |
Price & Availability of HMC320MS8G
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