 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| PD - _____ PRELIMINARY IRLP2505 VDSS = 55V RDS(on) = 0.008 ID = 90A HEXFET(R) Power MOSFET Logic-Level Gate Drive Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating Temperature Fast Switching Fully Avalanche Rated Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole. Absolute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw. Max. 90 64 360 150 1.0 20 500 54 15 2.9 -55 to + 175 300 (1.6mm from case) 10 lbf*in (1.1N*m) Units A W W/C V mJ A mJ V/ns C Thermal Resistance Parameter RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Min. ---- ---- ---- Typ. ---- 0.24 ---- Max. 1.0 ---- 40 Units C/W 8/4/95 IRLP2505 Electrical Characteristics @ T = 25C (unless otherwise specified) J V(BR)DSS V(BR)DSS/TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Min. 55 --- --- --- --- 1.0 59 --- --- --- --- --- --- --- --- --- --- --- Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, I D = 1mA 0.008 VGS = 10V, ID = 54A 0.010 VGS = 5.0V, ID = 54A 0.013 VGS = 4.0V, ID = 45A 2.0 V VDS = VGS, ID = 250A --- S VDS = 25V, ID = 54A 25 VDS = 55V, VGS = 0V A 250 VDS = 44V, VGS = 0V, TJ = 150C 100 VGS = 20V nA -100 VGS = -20V 130 ID = 54A 25 nC VDS = 44V 67 VGS = 5.0V, See Fig. 6 and 13 --- VDD = 28V --- ID = 54A ns --- RG = 1.3, VGS = 5.0V --- RD = 0.50, See Fig. 10 Between lead, --- 5.0 --- 6mm (0.25in.) nH from package --- 13 --- and center of die contact --- 5000 --- VGS = 0V --- 1100 --- pF VDS = 25V --- 390 --- = 1.0MHz, See Fig. 5 Typ. --- 0.035 --- --- --- --- --- --- --- --- --- --- --- --- 12 160 43 84 Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr Notes: Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Min. Typ. Max. Units --- --- --- --- --- --- --- --- 140 650 90 A 360 1.3 210 970 V ns nC Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25C, IS = 54A, VGS = 0V TJ = 25C, IF = 54A di/dt = 100A/s Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) VDD = 25V, starting T J = 25C, L = 240H RG = 25, IAS = 54A. (See Figure 12) ISD 54A, di/dt 130A/s, V DD V(BR)DSS, TJ 175C Pulse width 300s; duty cycle 2%. Caculated continuous current based on maximum allowable junction temperature;for recommended current-handling of the package refer to Design Tip # 93-4 IRLP2505 1000 VGS 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V TOP 1000 ID , Drain-to-Source Current (A) 100 ID , Drain-to-Source Current (A) VGS 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V TOP 100 2.5V 10 10 2.5V 20s PULSE WIDTH T J = 25C 1 10 1 0.1 A 100 1 0.1 20s PULSE WIDTH T J = 175C 1 10 A 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics, TJ = 25oC Fig 2. Typical Output Characteristics, TJ = 175oC 1000 3.0 R DS(on) , Drain-to-Source On Resistance (Normalized) I D = 90A I D , Drain-to-Source Current (A) TJ = 25C 100 2.5 TJ = 175C 2.0 1.5 10 1.0 0.5 1 2.5 3.5 4.5 V DS = 25V 20s PULSE WIDTH 5.5 6.5 7.5 A 0.0 -60 -40 -20 0 20 40 60 VGS = 10V 80 100 120 140 160 180 A VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature (C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature IRLP2505 10000 8000 VGS , Gate-to-Source Voltage (V) V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd 15 I D = 54A VDS = 44V VDS = 28V 12 C, Capacitance (pF) Ciss 6000 9 4000 Coss 6 2000 Crss A 1 10 100 3 0 0 0 40 80 FOR TEST CIRCUIT SEE FIGURE 13 120 160 A 200 VDS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 1000 ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) 10s ID , Drain Current (A) 100 100s 100 TJ = 175C TJ = 25C 1ms 10 10ms 10 0.4 0.8 1.2 1.6 2.0 VGS = 0V 2.4 A 1 1 TC = 25C TJ = 175C Single Pulse 10 A 100 2.8 VSD , Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area IRLP2505 VDS 90 RD LIMITED BY PACKAGE 80 70 60 50 40 30 20 10 0 25 50 75 100 125 150 VGS RG D.U.T. VDD ID, Drain Current (Amps) 5.0V Pulse Width 1 s Duty Factor 0.1 % Fig 10a. Switching Time Test Circuit A 175 TC , Case Temperature (C) Fig 9. Maximum Drain Current Vs. Case Temperature 10 Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) 0.0001 0.001 0.01 N otes : 1 . D u ty fa c tor D = t PD M t 1 t 2 1 /t 2 0.01 0.00001 2. P ea k TJ = P D M x Z th J C + T C A 10 0.1 1 t 1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case IRLP2505 1200 EAS , Single Pulse Avalanche Energy (mJ) TOP 1000 ID 22A 38A BOTTOM 54A 5.0 V 800 600 Fig 12a. Unclamped Inductive Test Circuit 400 200 0 VDD = 25V 25 50 75 100 125 150 A 175 Starting TJ , Junction Temperature (C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current Fig 12b. Unclamped Inductive Waveforms 5.0 V Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit IRLP2505 Peak Diode Recovery dv/dt Test Circuit D.U.T Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer RG * * * * dv/dt controlled by R G Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test VDD * * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS IRLP2505 Package Outline TO-247AC Outline Dimensions are shown in millimeters (inches) 3.65 (.143) 3.55 (.140) 0.25 (.010) M D B M -A5.50 (.217) 20.30 (.800) 19.70 (.775) 1 2 3 -C14.80 (.583) 14.20 (.559) 4.30 (.170) 3.70 (.145) LEAD ASSIGNMENTS 1 - GATE 2 - DRAIN 3 - SOURCE 4 - DRAIN -D5.30 (.209) 4.70 (.185) 2.50 (.089) 1.50 (.059) 4 15.90 (.626) 15.30 (.602) -B- 2X 5.50 (.217) 4.50 (.177) NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH. 3 CONFORMS TO JEDEC OUTLINE TO-247-AC. 2.40 (.094) 2.00 (.079) 2X 5.45 (.215) 2X 1.40 (.056) 3X 1.00 (.039) 0.25 (.010) M 3.40 (.133) 3.00 (.118) C AS 0.80 (.031) 3X 0.40 (.016) 2.60 (.102) 2.20 (.087) Part Marking Information TO-247AC EXAMPLE : THIS IS AN IRFPE30 WITH ASSEMBLY LOT CODE 3A1Q A INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE PART NUMBER IRFPE30 3A1Q 9302 DATE CODE (YYWW) YY = YEAR WW WEEK WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: (44) 0883 713215 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 3L1, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: 6172 37066 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: (39) 1145 10111 IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo 171 Tel: (03)3983 0641 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, 0316 Tel: 65 221 8371 Data and specifications subject to change without notice. |
Price & Availability of IRLP2505
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |