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| HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family VDSS IXFH14N80 IXFH15N80 ID25 RDS(on) 0.70 W 0.60 W 800 V 14 A 800 V 15 A trr 250 ns Preliminary data Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 MW Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C TC = 25C IS IDM, di/dt 100 A/ms, VDD VDSS, TJ 150C, RG = 2 W TC = 25C Maximum Ratings 800 800 20 30 14N80 15N80 14N80 15N80 14N80 15N80 14 15 56 60 14 15 30 5 V V V V A A A A A A mJ V/ns TO-247 AD (TAB) G = Gate S = Source D = Drain TAB = Drain Features 300 -55 ... +150 150 -55 ... +150 W C C C C International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated * Low package inductance - easy to drive and to protect * Fast intrinsic Rectifier * * * * PD TJ TJM Tstg TL Md Weight 1.6 mm (0.062 in.) from case for 10 s Mounting torque 300 1.13/10 Nm/lb.in. 6 g Applications Symbol Test Conditions (TJ = 25C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 3 mA VDSS temperature coefficient VDS = VGS, ID = 4 mA VGS(th) temperature coefficient VGS = 20 VDC, VDS = 0 VDS = 0.8 VDSS VGS = 0 V VGS = 10 V, ID = 0.5 ID25 TJ = 25C TJ = 125C Characteristic Values Min. Typ. Max. 800 0.096 2.0 -0.214 100 250 1 0.70 0.60 4.5 V %/K V %/K nA mA mA W W Advantages * Easy to mount with 1 screw * * * * * * * * DC-DC converters Synchronous rectification Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor control Temperature and lighting controls Low voltage relays 14N80 15N80 Pulse test, t 300 ms, duty cycle d 2 % (isolated mounting screw hole) * Space savings * High power density IXYS reserves the right to change limits, test conditions, and dimensions. 96523B (3/98) (c) 2000 IXYS All rights reserved 1-4 IXFH 14N80 IXFH 15N80 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) Min. Typ. Max. 8 3965 VGS = 0 V, VDS = 25 V, f = 1 MHz 315 73 20 VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 RG = 2 W (External) 33 63 32 128 VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 30 55 14 4870 395 120 50 50 100 50 155 45 80 0.42 0.25 S pF pF pF ns ns ns ns nC nC nC K/W K/W Dim. Millimeter Min. Max. A B C D E F G H 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.49 5.4 6.2 1.65 2.13 4.5 1.0 1.4 10.8 11.0 4.7 0.4 5.3 0.8 Inches Min. Max. 0.780 0.800 0.819 0.845 0.610 0.640 0.140 0.144 0.170 0.216 0.212 0.244 0.065 0.084 0.177 0.040 0.055 0.426 0.433 0.185 0.209 0.016 0.031 0.087 0.102 TO-247 AD Outline gfs Ciss Coss C rss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK VDS = 10 V; ID = 0.5 ID25, pulse test Source-Drain Diode Symbol IS ISM VSD t rr QRM IRM Test Conditions VGS = 0 V Repetitive; Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 14N80 15N80 14N80 15N80 14 15 56 60 1.5 250 400 1 8.5 A A A A V ns ns mC A J K L M N 1.5 2.49 IF = IS, VGS = 0 V, Pulse test, t 300 ms, duty cycle d 2 % IF = IS -di/dt = 100 A/ms, VR = 100 V TJ = 25C TJ = 125C (c) 2000 IXYS All rights reserved IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-4 IXFH 14N80 IXFH 15N80 Figure 1. Output Characteristics at 25OC 20 TJ = 25OC Figure 2. Output Characteristics at 125OC 20 16 ID - Amperes ID - Amperes VGS = 9V 8V 7V 6V TJ = 125OC 16 5V VGS = 9V 8V 7V 6V 5V 12 8 4 0 12 8 4 0 4V 4V 0 2 4 6 8 10 0 4 8 12 16 20 VDS - Volts VDS - Volts Figure 3. RDS(on) normalized to 0.5 ID25 value vs. ID 2.6 2.4 VGS = 10V Figure 4. RDS(on) normalized to 0.5 ID25 value vs. TJ 2.6 RDS(ON) - Normalized RDS(ON) - Normalized 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0 5 TJ = 125OC 2.4 2.2 2.0 1.8 1.6 1.4 1.2 VGS = 10V ID = 15A TJ = 25OC ID = 7.5A 10 15 20 25 1.0 25 50 75 100 125 150 ID - Amperes TJ - Degrees C Figure 5. Drain Current vs. Case Temperature 20 16 Figure 6. Admittance Curves 16 14 ID - Amperes ID - Amperes IXFH15N80 12 10 8 6 4 2 TJ = 125oC TJ = 25oC 12 8 4 0 -50 IXFH14N80 -25 0 25 50 75 100 125 150 0 2 3 4 5 6 7 TC - Degrees C VGS - Volts (c) 2000 IXYS All rights reserved 3-4 IXFH 14N80 IXFH 15N80 Figure 7. Gate Charge 12 10 VDS = 400V ID = 15A IG = 1mA Figure 8. Capacitance Curves 5000 Ciss 2500 VGS - Volts 8 6 4 2 0 Capacitance - pF f = 1MHz 1000 500 250 100 Crss Coss 0 50 100 150 200 250 50 0 5 10 15 20 25 30 35 40 Gate Charge - nC VDS - Volts Figure 9. Source Current vs. Source to Drain Voltage 50 40 Figure10. Forward Bias Safe Operating Area 1 00 ID - Amperes 30 TJ = 125OC ID - Amperes 10 0.1ms 1ms 20 TJ = 25OC 1 TC = 25OC 10 0 0.2 10ms 100ms DC 0.4 0.6 0.8 1.0 1.2 1.4 0. 1 10 VSD - Volts VDS - Volts 1 00 1 000 Figure 11. Transient Thermal Resistance 1 D=0.5 R(th)JC - K/W 0.1 D=0.2 D=0.1 D=0.05 D = Duty Cycle 0.01 D=0.02 D=0.01 Single pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds (c) 2000 IXYS All rights reserved 4-4 |
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