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| HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg IXFH 15N80Q IXFT 15N80Q VDSS ID25 RDS(on) = = = 800 V 15 A 0.60 W trr 250 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 MW Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C TC = 25C TC = 25C IS IDM, di/dt 100 A/ms, VDD VDSS, TJ 150C, RG = 2 W TC = 25C Maximum Ratings 800 800 20 30 15 60 15 30 1.0 5 300 -55 ... +150 150 -55 ... +150 V V V V A A A mJ J V/ns TO-247 AD (IXFH) (TAB) TO-268 (D3) (IXFT) Case Style G W C C C C Features * * * * G = Gate S = Source S D = Drain TAB = Drain (TAB) 1.6 mm (0.062 in.) from case for 10 s Mounting torque TO-247 TO-268 300 1.13/10 Nm/lb.in. 6 4 g g Symbol Test Conditions (TJ = 25C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 3 mA VDS = VGS, ID = 4 mA VGS = 20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 25C TJ = 125C Characteristic Values Min. Typ. Max. 800 2.0 4.5 100 25 1 0.60 V V nA mA mA W IXYS advanced low Qg process International standard packages Low RDS (on) Unclamped Inductive Switching (UIS) rated * Fast switching * Molding epoxies meet UL 94 V-0 flammability classification Advantages * Easy to mount * Space savings * High power density VGS = 10 V, ID = 0.5 ID25 Pulse test, t 300 ms, duty cycle d 2 % IXYS reserves the right to change limits, test conditions, and dimensions. 98514B (7/00) (c) 2000 IXYS All rights reserved 1-4 IXFH 15N80Q IXFT 15N80Q Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) Min. Typ. Max. 8 16 4300 VGS = 0 V, VDS = 25 V, f = 1 MHz 360 60 18 VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 RG = 1.5 W (External) 27 53 16 90 VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 20 30 0.42 (TO-247) 0.25 S pF pF pF ns ns ns ns nC nC nC K/W K/W Dim. Millimeter Min. Max. A B C D E F G H 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.49 5.4 6.2 1.65 2.13 4.5 1.0 1.4 10.8 11.0 4.7 0.4 5.3 0.8 Inches Min. Max. 0.780 0.800 0.819 0.845 0.610 0.640 0.140 0.144 0.170 0.216 0.212 0.244 0.065 0.084 0.177 0.040 0.055 0.426 0.433 0.185 0.209 0.016 0.031 0.087 0.102 TO-247 AD (IXFH) Outline gfs Ciss Coss C rss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK VDS = 10 V; ID = 0.5 ID25, pulse test Source-Drain Diode Symbol IS ISM VSD t rr QRM IRM Test Conditions VGS = 0 V Repetitive; Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 15 60 1.5 250 A A V ns mC A J K L M N 1.5 2.49 IF = IS, VGS = 0 V, Pulse test, t 300 ms, duty cycle d 2 % IF = IS-di/dt = 100 A/ms, VR = 100 V 0.85 8 TO-268AA (D3 PAK) Dim. A A1 A2 b b2 C D E E1 e H L L1 L2 L3 L4 Millimeter Min. Max. 4.9 5.1 2.7 2.9 .02 .25 1.15 1.45 1.9 2.1 .4 .65 13.80 14.00 15.85 16.05 13.3 13.6 5.45 BSC 18.70 19.10 2.40 2.70 1.20 1.40 1.00 1.15 0.25 BSC 3.80 4.10 Inches Min. Max. .193 .201 .106 .114 .001 .010 .045 .057 .75 .83 .016 .026 .543 .551 .624 .632 .524 .535 .215 BSC .736 .752 .094 .106 .047 .055 .039 .045 .010 BSC .150 .161 Min. Recommended Footprint (c) 2000 IXYS All rights reserved IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-4 IXFH 15N80Q IXFT 15N80Q 20 TJ = 25OC 20 VGS = 9V 8V 7V 6V TJ = 125OC 16 16 5V ID - Amperes ID - Amperes VGS = 9V 8V 7V 6V 5V 12 8 4 0 12 8 4 0 4V 4V 0 2 4 6 8 10 0 4 8 12 16 20 VDS - Volts VDS - Volts Figure 1. Output Characteristics at 25OC 2.6 2.4 VGS = 10V Figure 2. Output Characteristics at 125OC 2.6 RDS(ON) - Normalized RDS(ON) - Normalized 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0 5 TJ = 125OC 2.4 2.2 2.0 1.8 1.6 1.4 1.2 VGS = 10V ID = 15A TJ = 25OC ID = 7.5A 10 15 20 25 1.0 25 50 75 100 125 150 ID - Amperes TJ - Degrees C Figure 3. RDS(on) normalized to value at ID = 12A 20 16 Figure 4. RDS(on) normalized to value at ID = 12A 16 14 ID - Amperes ID - Amperes IXFH15N80 12 10 8 6 4 2 TJ = 125oC TJ = 25oC 12 8 4 0 -50 IXFH14N80 -25 0 25 50 75 100 125 150 0 2 3 4 5 6 7 TC - Degrees C VGS - Volts Figure 5. Drain Current vs. Case Temperature Figure 6. Admittance Curves (c) 2000 IXYS All rights reserved 3-4 IXFH 15N80Q IXFT 15N80Q 12 10 VDS = 400 V ID = 7.5 A IG = 10 mA 10000 Capacitance - pF VGS - Volts 8 6 4 2 0 1000 Ciss f = 1MHz Coss 100 Crss 10 0 20 40 60 80 100 120 0 5 10 15 20 25 30 35 Gate Charge - nC VDS - Volts Figure 7. Gate Charge 50 40 60 Figure 8. Capacitance Curves 1 00 ID - Amperes 30 TJ = 125OC ID - Amperes 10 0.1 ms 1 ms 10 ms 100 ms DC 20 TJ = 25OC 1 TC = 25 C O 10 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0. 1 10 1 00 1 000 VSD - Volts VDS - Volts 1.00 Figure 9. Source Current vs. Source to Drain Voltage Figure10. Forward Bias Safe Operating Area D=0.5 R(th)JC - K/W 0.10 D=0.2 D=0.1 D=0.05 D=0.02 0.01 D=0.01 Single Pulse 0.00 10-5 10-4 10-3 10-2 10-1 100 101 Pulse Width - Seconds Figure 11. Transient Thermal Resistance (c) 2000 IXYS All rights reserved 4-4 |
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