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| Advance Technical Information HIGH Voltage IGBT IXSA 15N120B IXSP 15N120B "S" Series - Improved SCSOA Capability VCES IC25 VCE(sat) =1200 V = 30 A = 3.4 V Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) tSC PC TJ TJM Tstg Md Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 1 M Continuous Transient TC = 25C TC = 90C TC = 25C, 1 ms VGE= 15 V, TJ = 125C, RG = 10 Clamped inductive load Maximum Ratings 1200 1200 20 30 30 15 60 ICM = 40 @ 0.8 VCES 10 150 -55 ... +150 150 -55 ... +150 V V V V A A A A s W C C C TO-220AB (IXSP) GC E C (TAB) TO-263 AA (IXSA) G E C (TAB) TJ = 125C, VGE = 720 V; VGE = 15 V, RG = 10 Non repetitive TC = 25C Mounting torque (TO-247) 1.13/10 Nm/lb.in. 300 C C g g Features Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum tab temperature for soldering Weight (TO-263) TO-220 TO-263 *International 260 4 2 *Low switching losses, low V *MOS Gate turn-on - drive simplicity Applications standard packages JEDEC TO-220AB and TO-263AA (sat) Symbol Test Conditions (TJ = 25C, unless otherwise specified) BVCES VGE(th) ICES IC = 250 A, VGE = 0 V IC = 250 A, VCE = VGE VCE = VCES VGE = 0 V IGES VCE(sat) VCE = 0 V, VGE = 20 V IC = ICE90, VGE = 15 Min. 1200 3 TJ = 25C TJ = 125C Characteristic Values Typ. Max. V 6 50 2.5 100 3.0 2.8 3.4 V A mA nA V V * AC motor speed control * DC servo and robot drives * DC choppers * Uninterruptible power supplies (UPS) * Switch-mode and resonant-mode power supplies Advantages TJ = 125C * Easy to mount with one screw * Reduces assembly time and cost * High power density 98922 (5/02) (c) 2002 IXYS All rights reserved IXSA 15N120B IXSP 15N120B Symbol Test Conditions (TJ = 25C, unless otherwise specified) gfs Cies Coes Cres Qg Qge Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK TO-220 0.5 Inductive load, TJ = 125C IC = IC90, VGE = 15 V VCE = 960 V, RG = Roff = 10 Note3 Inductive load, TJ = 25C IC = IC90, VGE = 15 V VCE = 960 V, RG = Roff = 10 Note3 IC = IC90, VGE = 15 V, VCE = 0.5 VCES VCE = 25 V, VGE = 0 V, f = 1 MHz IC = IC90; VCE = 10 V, Note2 1400 98 37 57 14 25 30 25 148 160 1.75 30 25 1.1 265 298 3.1 0.83 280 320 3.0 pF pF pF nC nC nC ns ns ns ns mJ ns ns mJ ns ns mJ K/W K/W TO-263 AA Outline Notes: 1. Device must be heatsunk for high temperature leakage current measurements to avoid thermal runaway. Pulse test, t 300 s, duty cycle 2 % Switching times may increase for VCE (Clamp) > 0.8 VCES, higher TJ or increased RG. Pins: 1 - Gate 3 - Emitter 2 - Collector 4 - Collector Bottom Side Characteristic Values Min. Typ. Max. 7 9.5 S TO-220 AB Dimensions 2. 3. 1. 2. 3. 4. Gate Collector Emitter Collector Bottom Side Min. Recommended Footprint (Dimensions in inches and mm) Dim. A A1 b b2 c c2 D D1 E E1 e L L1 L2 L3 L4 R Millimeter Min. Max. 4.06 2.03 0.51 1.14 0.46 1.14 8.64 7.11 9.65 6.86 2.54 14.61 2.29 1.02 1.27 0 0.46 4.83 2.79 0.99 1.40 0.74 1.40 9.65 8.13 10.29 8.13 BSC 15.88 2.79 1.40 1.78 0.38 0.74 Inches Min. Max. .160 .080 .020 .045 .018 .045 .340 .280 .380 .270 .100 .575 .090 .040 .050 0 .018 .190 .110 .039 .055 .029 .055 .380 .320 .405 .320 BSC .625 .110 .055 .070 .015 .029 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1 |
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