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STGW50NB60M
N-CHANNEL 50A - 600V - TO-247 PowerMESHTM IGBT
TYPE STGW50NB60M
s s s s
VCES 600 V
VCE(sat)(25C) < 1.9 V
IC 50 A
HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) LOW ON-VOLTAGE DROP (VCESAT) LOW GATE CHARGE HIGH CURRENT CAPABILITY
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3
TO-247 DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESHTM IGBTs, with outstanding performances. The suffix "M" identifies a family optimized to achieve very low saturation on voltage for frequency applications <10 KHz.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS s MOTOR CONTROL s WELDING EQUIPMENTS
ABSOLUTE MAXIMUM RATINGS
Symbol VCES VECR VGE IC IC ICM ( ) PTOT Tstg Tj Parameter Collector-Emitter Voltage (VGS = 0) Reverse Battery Protection Gate-Emitter Voltage Collector Current (continuous) at TC = 25C Collector Current (continuous) at TC = 100C Collector Current (pulsed) Total Dissipation at TC = 25C Derating Factor Storage Temperature Max. Operating Junction Temperature Value 600 20 20 100 50 400 250 2 -65 to 150 150 Unit V V V A A A W W/C C C
(q ) Pulse width limited by safe operating area
May 2003
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THERMAL DATA
Rthj-case Rthj-amb Rthc-h Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-heatsink Typ 0.5 30 0.1 C/W C/W C/W
ELECTRICAL CHARACTERISTICS (TCASE = 25 C UNLESS OTHERWISE SPECIFIED) OFF
Symbol VBR(CES) ICES IGES Parameter Collector-Emitter Breakdown Voltage Collector cut-off (VGE = 0) Gate-Emitter Leakage Current (VCE = 0) Test Conditions IC = 250 A, VGE = 0 VCE = Max Rating, TC = 25 C VCE = Max Rating, TC = 125 C VGE = 20 V , VCE = 0 Min. 600 10 100 100 Typ. Max. Unit V A A nA
ON (1)
Symbol VGE(th) VCE(sat) Parameter Gate Threshold Voltage Collector-Emitter Saturation Voltage Test Conditions VCE = VGE, IC = 250 A VGE = 15V, VGE = 15V, VGE = 15V, VGE = 15V, IC = 30 A @25C IC = 30 A @100C IC = 50 A @25C IC = 50 A @100C Min. 3 Typ. 4 1.3 1.2 1.5 1.35 Max. 5 Unit V V V V V
1.9
DYNAMIC
Symbol gfs Cies Coes Cres Qg Qge Qgc ICL Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Latching Current Test Conditions VCE = 15 V , IC = 18 A VCE = 25 V, f = 1 MHz, VGE = 0 VCE = 480 V, IC = 50 A, VGE = 15 V Vclamp = 480 V , Tj = 125C RG = 10 300 Min. Typ. 22 4500 400 70 231 28 97 Max. Unit S pF pF pF nC nC nC A
SWITCHING ON
Symbol td(on) tr (di/dt)on Eon Parameter Turn-on Delay Time Rise Time Turn-on Current Slope Turn-on Switching Losses Test Conditions VCC = 480 V, IC = 50 A RG = 10 , VGE = 15 V VCC= 480 V, IC = 50 A RG=10 , VGE = 15 V Tj = 125C Min. Typ. 45 30 1600 800 Max. Unit ns ns A/s J
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ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING OFF
Symbol tc tr(Voff) td(off) tf Eoff(**) Ets tc tr(Voff) td(off) tf Eoff(**) Ets Parameter Cross-over Time Off Voltage Rise Time Delay Time Fall Time Turn-off Switching Loss Total Switching Loss Cross-over Time Off Voltage Rise Time Delay Time Fall Time Turn-off Switching Loss Total Switching Loss Vcc = 480 V, IC = 50 A RGE = 10 , VGE = 15 V Tj = 125 C Test Conditions Vcc = 480 V, IC = 50 A RGE = 10 , VGE = 15 V Min. Typ. 450 130 410 300 4 4.1 730 265 565 440 6.6 7.1 Max. Unit ns ns ns ns mJ mJ ns ns ns ns mJ mJ
Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. 2. Pulse width limited by max. junction temperature. (**)Losses include Also the Tail (Jedec Standardization)
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Thermal Impedance Switching Off Safe Operating Area
Output Characteristics
Transfer Characteristics
Normalized Gate Threshold Voltage vs Temp.
Transconductance
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Collector-Emitter On Voltage vs Temperature Gate-Charge vs Gate-Emitter Voltage
Capacitance Variations
Normalized Break-down Voltage vs Temp.
Total Switching losses vs Gate Resistance
Total Switching losses vs Temperature
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Total Switching losses vs Ic Collector-Emitter on Voltage vs Current
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Fig. 1: Gate Charge test Circuit Fig. 2: Test Circuit For Inductive Load Switching
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TO-247 MECHANICAL DATA
mm. MIN. 4.85 2.20 0.40 1 3 2 2 3 10.90 15.45 19.85 3.70 18.50 14.20 34.60 5.50 2 5 60 3.55 3.65 0.14 3 0.07 5 60 0.143 14.80 0.56 1.36 0.21 0.11 15.75 20.15 4.30 0.60 0.78 0.14 0.72 0.58 2.40 3.40 0.07 0.11 0.43 0.62 0.79 0.17 TYP MAX. 5.15 2.60 0.80 1.40 MIN. 0.19 0.08 0.015 0.04 0.11 0.07 0.09 0.13 inch TYP. MAX. 0.20 0.10 0.03 0.05
DIM. A D E F F1 F2 F3 F4 G H L L1 L2 L3 L4 L5 M V V2 Dia
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Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. (c) The ST logo is a registered trademark of STMicroelectronics (c) 2003 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. (c) http://www.st.com
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