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Advance Product Information
November 9, 2004
High Power DC - 18GHz SPDT FET Switch
* * * * * * * *
TGS2306-EPU
Key Features and Performance
DC - 18 GHz Frequency Range 29 dBm Input P1dB @ VC = -5V > 30 dB Isolation <1 nsec switching speed Control Voltage Application from Either Side of MMIC -3V or -5V Control Voltage 0.5m pHEMT 3MI Technology Chip Dimensions: 0.83 x 1.11 x 0.10 mm (0.033 x 0.044 x 0.004 inches)
Preliminary Measured Performance
VC1 = 0V; VC2 = -5V
0 -2 -4 -6 -8 S21 S11 S22 S13 10 0 -5 -10 -15 -20 -25 -30 -35 -10 0 2 4 6 8 10 12 14 Frequency (GHz) 16 18 20 -40
Desription
The TriQuint TGS2306-EPU is a GaAs single-pole, double-throw (SPDT) FET monolithic switch designed to operate over the DC to 18GHz frequency range. This switch not only maintains a high isolation loss and a low insertion loss across a wide bandwidth, but also has very low power consumption and high power handling of 29dBm or greater input P1dB at VC = 5V. These advantages, along with the small size of the chip, make the TGS2306-EPU ideal for use in high-speed radar and communication applications.
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. 1
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Isolation, Return Loss (dB)
5
Insertion Loss (dB)
Advance Product Information
November 9, 2004
TABLE I MAXIMUM RATINGS Symbol VC IC PIN PD TCH TM TSTG 1/ 2/ 3/ 4/ Control Voltage Control Current Input Continuous Wave Power Power Dissipation Operating Channel Temperature Mounting Temperature (30 Seconds) Storage Temperature Parameter Value -7 V 2.25 mA TBD TBD 150 C 320 0C -65 to 150 0C
0
TGS2306-EPU
Notes 1/ 2/ 1/ 2/ 1/ 2/ 1/ 2/ 3/ 4/
These ratings represent the maximum operable values for this device Combinations of supply voltage, supply current, input power, and output power shall not exceed PD at a package base temperature of 70C When operated at this bias condition with a baseplate temperature of 70C, the MTTF is reduced to 1.0E+6 hours Junction operating temperature will directly affect the device median time to failure (MTTF). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels.
TABLE II TRUTH TABLE Selected RF Output RF Out 1 RF Out 2 VC1 0V -5 V VC2 -5 V 0V
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. 2
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
November 9, 2004
Fixtured Measurement
0.0 -0.5
TGS2306-EPU
Insertion Loss (dB)
-1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 -4.5 -5.0 0 0 -5 S11 S22 2 4 6 8 10 12 14 16 18 20
Frequency (GHz)
Return Loss (dB)
-10 -15 -20 -25 -30 0 2 4 6 8 10 12 14 16 18 20
Frequency (GHz)
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. 3
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
November 9, 2004
Fixtured Measurement
0 -5 -10
TGS2306-EPU
Isolation (dB)
-15 -20 -25 -30 -35 -40 0 0.0 -0.5 -35degC +25degC +85degC 2 4 6 8 10 12 14 16 18 20
Frequency (GHz)
Insertion Loss (dB)
-1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 -4.5 -5.0 0 2 4 6 8 10 12 14
16
18
20
Frequency (GHz)
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. 4
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
November 9, 2004
Switching Speed Measurements Off to On Time=0 50% Control Signal to 90% RF = 480 psec
100 psec/div
On to Off 50% Control Signal to 10% RF = 320 psec
50 psec/div
Measurement performed using a pulse generator with 100 psec rise/fall times driving 50 ohm transmission lines that were terminated in 50 ohms and attached to the VC1 and VC2 control inputs. Pulse generator provided complementary outputs.
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. 5
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
November 9, 2004
Mechanical Drawing
1.11 [0.044] .99 [0.039]
TGS2306-EPU
2
3
4
.55 [0.022]
1
.11 [0.004] .00 [0.000] .00 [0.000]
7
6
5
.11 [0.004]
.24 [0.009]
.68 [0.027]
Units: millimeters [inches] Thickness: 0.10 [0.004] (reference only) Chip edge to bond pad dimensions are shown to center of bond pads. Chip size tolerance: 0.05 [0.002] RF ground through backside Bond Pad #1 Bond Pad #2 Bond Pad #3 Bond Pad #4 Bond Pad #5 Bond Pad #6 Bond Pad #7 RF Input VC1 VC2 RF Output 1 RF Output 2 VC2 VC1 0.10 x 0.20 0.10 x 0.10 0.10 x 0.10 0.20 x 0.10 0.20 x 0.10 0.10 x 0.10 0.10 x 0.10 [0.004 x 0.008] [0.004 x 0.004] [0.004 x 0.004] [0.008 x 0.004] [0.008 x 0.004] [0.004 x 0.004] [0.004 x 0.004]
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. 6
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
.83 [0.033]
Advance Product Information
November 9, 2004
TGS2306-EPU Chip Assembly & Bonding Diagram
For optimum insertion loss and return loss, a single 0.001" bondwire of length 35 mils should be used. This will be approximately 0.42nH. Differences in bondwire length will have an impact on switch performance. VC1 & VC2 can be applied from either side of the MMIC. DC blocks are required for the RF input and output.
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test.
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. 7
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
November 9, 2004
TGS2306-EPU Assembly Process Notes
Reflow process assembly notes: * * * * * Use AuSn (80/20) solder with limited exposure to temperatures at or above 300C. (30 seconds maximum) An alloy station or conveyor furnace with reducing atmosphere should be used. No fluxes should be utilized. Coefficient of thermal expansion matching is critical for long-term reliability. Devices must be stored in a dry nitrogen atmosphere.
Component placement and adhesive attachment assembly notes: * * * * * * * Vacuum pencils and/or vacuum collets are the preferred method of pick up. Air bridges must be avoided during placement. The force impact is critical during auto placement. Organic attachment can be used in low-power applications. Curing should be done in a convection oven; proper exhaust is a safety concern. Microwave or radiant curing should not be used because of differential heating. Coefficient of thermal expansion matching is critical.
Interconnect process assembly notes: * * * * Thermosonic ball bonding is the preferred interconnect technique. Force, time, and ultrasonics are critical parameters. Aluminum wire should not be used. Maximum stage temperature is 200C.
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test.
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. 8
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com

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