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| Transistor 2SD1244 Silicon NPN epitaxial planer type For low-frequency power amplification Unit: mm 6.90.1 2.50.1 1.0 1.0 2.40.2 2.00.2 3.50.1 s Features q q 1.5 0.4 1.5 R0.9 R0.9 0.85 0.550.1 0.450.05 1.250.05 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature * (Ta=25C) Ratings 40 20 7 8 5 1 150 -55 ~ +150 1cm2 Unit V 3 2 1 Symbol VCBO VCEO VEBO ICP IC PC* Tj Tstg 2.5 2.5 V V A A W C C 1:Base 2:Collector 3:Emitter EIAJ:SC-71 M Type Mold Package Printed circuit board: Copper foil area of thickness of 1.7mm for the collector portion or more, and the board s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance (Ta=25C) Symbol ICBO IEBO VCEO VEBO hFE1 hFE2 VCE(sat) fT Cob *1 Conditions VCB = 10V, IE = 0 VEB = 7V, IC = 0 IC = 1mA, IB = 0 IE = 10A, IC = 0 VCE = 2V, IC = 0.5A*2 VCE = 2V, IC = 2A*2 IC = 3A, IB = 0.1A*2 VCB = 6V, IE = -50mA, f = 200MHz VCB = 20V, IE = 0, f = 1MHz min typ max 0.1 0.1 4.10.2 q Low collector to emitter saturation voltage VCE(sat). Satisfactory operation performances at high efficiency with the low-voltage power supply. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 1.00.1 R 0. 4.50.1 7 Unit A A V V 20 7 230 150 1 150 50 *2 600 V MHz pF Pulse measurement *1h FE1 Rank classification Q 230 ~ 380 R 340 ~ 600 Rank hFE1 1 Transistor PC -- Ta 1.2 2.4 Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. Ta=25C 2.0 IB=7mA 6mA 1.6 5mA 1.2 4mA 3mA 0.8 2mA 0.4 5 2SD1244 IC -- VCE 6 VCE=2V Ta=75C 25C -25C IC -- VBE Collector power dissipation PC (W) 1.0 Collector current IC (A) 0.8 Collector current IC (A) 4 0.6 3 0.4 2 0.2 1mA 1 0 0 20 40 60 80 100 120 140 160 0 0 0.4 0.8 1.2 1.6 2.0 2.4 0 0 0.4 0.8 1.2 1.6 2.0 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) 10 3 1 0.3 0.1 0.03 0.01 0.003 0.001 0.01 0.03 Ta=75C 25C -25C VBE(sat) -- IC Base to emitter saturation voltage VBE(sat) (V) IC/IB=30 100 30 10 3 1 0.3 0.1 0.03 0.01 0.01 0.03 Ta=-25C 75C IC/IB=30 600 hFE -- IC VCE=2V Forward current transfer ratio hFE 500 400 Ta=75C 300 25C -25C 200 25C 100 0.1 0.3 1 3 10 0.1 0.3 1 3 10 0 0.01 0.03 0.1 0.3 1 3 10 Collector current IC (A) Collector current IC (A) Collector current IC (A) fT -- IE 400 350 300 250 200 150 100 50 0 - 0.01 - 0.03 - 0.1 - 0.3 100 Cob -- VCB Collector output capacitance Cob (pF) VCB=6V Ta=25C IE=0 f=1MHz Ta=25C Area of safe operation (ASO) 100 30 Single pulse Ta=25C Transition frequency fT (MHz) Collector current IC (A) 80 10 3 1 0.3 0.1 0.03 ICP IC t=1s 60 t=10ms 40 20 0 -1 -3 -10 1 3 10 30 100 0.01 0.1 0.3 1 3 10 30 100 Emitter current IE (A) Collector to base voltage VCB (V) Collector to emitter voltage VCE (V) 2 |
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