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| CMT2N7000 SMALL SIGNAL MOSFET GENERAL DESCRIPTION This N-Channel enhancement mode field effect transistor is produced using high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. It can be used in most applications requiring up to 200mA DC and can deliver pulsed currents up to 500mA. This product is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. FEATURES ! ! ! ! High Density Cell Design for Low RDS(ON) Voltage Controlled Small Signal Switch Rugged and Reliable High Saturation Current Capability PIN CONFIGURATION TO-92 SYMBOL D Top View SOURCE DRAIN GATE G 1 2 3 S N-Channel MOSFET ORDERING INFORMATION Part Number CMT2N7000 Package TO-92 ABSOLUTE MAXIMUM RATINGS Rating Drain Source Voltage Drain-Gate Voltage (RGS = 1.0M) Drain to Current Continuous Pulsed Gate-to-Source Voltage Continue Non-repetitive Total Power Dissipation Derate above 25 Operating and Storage Temperature Range Thermal Resistance Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8" from case for 10 seconds TJ, TSTG JA TL Symbol VDSS VDGR ID IDM VGS VGSM PD Value 60 60 200 500 20 40 350 2.8 -55 to 150 357 300 V V mW mW/ /W Unit V V mA 2002/10/07 Preliminary Rev. 1.0 Champion Microelectronic Corporation Page 1 CMT2N7000 SMALL SIGNAL MOSFET ELECTRICAL CHARACTERISTICS Unless otherwise specified, TJ = 25. CMT2N7000 Characteristic Drain-Source Breakdown Voltage (VGS = 0 V, ID = 10 A) Drain-Source Leakage Current (VDS = 48 V, VGS = 0 V) (VDS = 48 V, VGS = 0 V, TJ = 125) Gate-Source Leakage Current-Forward (Vgsf = 15 V, VDS = 0 V) Gate Threshold Voltage * (VDS = VGS, ID = 1.0 mA) Static Drain-Source On-Resistance * (VGS = 10 V, ID = 0.5A) Drain-Source On-Voltage * (VGS = 10 V, ID = 0.5A) On-State Drain Current * (VGS = 5 V, VDS = 10 V) Forward Transconductance (VDS = 10 V, ID = 200mA) * Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-Off Delay Time (VDS = 25 V, VGS = 0 V, f = 1.0 MHz) (VDD = 15 V, ID = 500 mA, Vgen = 10 V, RG = 25, RL = 30) * Symbol V(BR)DSS IDSS 1.0 1.0 IGSSF VGS(th) RDS(on) 5.0 VDS(on) 2.5 Id(on) gFS Ciss Coss Crss td(on) td(off) 60 100 60 25 5.0 10 10 mA mmhos pF pF pF ns ns V 0.8 -10 3.0 A mA nA V Min 60 Typ Max Units V * Pulse Test: Pulse Width 300s, Duty Cycle 2% 2002/10/07 Preliminary Rev. 1.0 Champion Microelectronic Corporation Page 2 CMT2N7000 SMALL SIGNAL MOSFET TYPICAL ELECTRICAL CHARACTERISTICS 2002/10/07 Preliminary Rev. 1.0 Champion Microelectronic Corporation Page 3 CMT2N7000 SMALL SIGNAL MOSFET PACKAGE DIMENSION TO-92 A A1 b D D1 E L e A 1 A1 E L b D e 2002/10/07 Preliminary Rev. 1.0 Champion Microelectronic Corporation 1 D1 Page 4 CMT2N7000 SMALL SIGNAL MOSFET IMPORTANT NOTICE Champion Microelectronic Corporation (CMC) reserves the right to make changes to its products or to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. A few applications using integrated circuit products may involve potential risks of death, personal injury, or severe property or environmental damage. CMC integrated circuit products are not designed, intended, authorized, or warranted to be suitable for Use of CMC products in such applications is In order to minimize risks associated with the customer's applications, the use in life-support applications, devices or systems or other critical applications. understood to be fully at the risk of the customer. customer should provide adequate design and operating safeguards. HsinChu Headquarter 5F, No. 11, Park Avenue II, Science-Based Industrial Park, HsinChu City, Taiwan T E L : +886-3-567 9979 F A X : +886-3-567 9909 Sales & Marketing 11F, No. 306-3, SEC. 1, Ta Tung Road, Hsichih, Taipei Hsien 221, Taiwan T E L : +886-2-8692 1591 F A X : +886-2-8692 1596 2002/10/07 Preliminary Rev. 1.0 Champion Microelectronic Corporation Page 5 |
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