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IGP03N120H2, IGW03N120H2
HighSpeed 2-Technology
* Designed for: - SMPS - Lamp Ballast - ZVS-Converter - optimised for soft-switching / resonant topologies 2 generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavior - parallel switching capability - tight parameter distribution - Eoff optimized for IC =3A
nd
IGB03N120H2
C
G
E
*
P-TO-220-3-1 (TO-220AB)
P-TO-263-3-2 (D-PAK) (TO-263AB)
P-TO-247-3-1 (TO-247AC)
* Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type IGW03N120H2 IGP03N120H2 IGB03N120H2 Maximum Ratings Parameter Collector-emitter voltage Triangular collector current TC = 25C, f = 140kHz TC = 100C, f = 140kHz Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE 1200V, Tj 150C Gate-emitter voltage Power dissipation TC = 25C Operating junction and storage temperature Soldering temperature, 1.6mm (0.063 in.) from case for 10s Tj , Tstg -40...+150 260 225 (for SMD) C VGE Ptot 20 62.5 V W ICpuls Symbol VCE IC 9.6 3.9 9.9 9.9 Value 1200 Unit V A VCE 1200V 1200V 1200V IC 3A 3A 3A Eoff 0.15mJ 0.15mJ 0.15mJ Tj 150C 150C 150C Package P-TO-247 P-TO-220-3-1 P-TO-263 (D PAK)
2
Ordering Code Q67040-S4596 Q67040-S4599 Q67040-S4598
Power Semiconductors
1
Rev. 2, Mar-04
IGP03N120H2, IGW03N120H2
Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction - case Thermal resistance, junction - ambient SMD version, device on PCB1) RthJA RthJA P-TO-220-3-1 P-TO-247-3-1 P-TO-263 (D2PAK) RthJC Symbol Conditions
IGB03N120H2
Max. Value 2.0 62 40
Unit K/W
Electrical Characteristic, at Tj = 25 C, unless otherwise specified Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage V ( B R ) C E S V G E = 0V, I C = 30 0A VCE(sat) V G E = 15V, I C = 3A T j = 25 C T j = 15 0 C V G E = 10V, I C = 3A , T j = 25 C Gate-emitter threshold voltage Zero gate voltage collector current VGE(th) ICES I C = 90A ,V C E =V G E V C E = 1200V, V G E = 0V T j = 25 C T j = 15 0 C Gate-emitter leakage current Transconductance Dynamic Characteristic Input capacitance Output capacitance Reverse transfer capacitance Gate charge Internal emitter inductance measured 5mm (0.197 in.) from case Ciss Coss Crss QGate LE V C E = 25V, V G E = 0V, f= 1 M Hz V C C = 9 60V, I C = 3A V G E = 1 5V P -T O - 2 20- 3- 1 P-TO-247-3-1 7 13 nH 205 24 7 22 nC pF IGES gfs V C E = 0V ,V G E = 2 0V V C E = 20V, I C = 3A 2 20 80 100 nA S 2.1 2.2 2.5 2.4 3 2.8 3.9 A 1200 V Symbol Conditions Value min. Typ. max. Unit
1)
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70m thick) copper area for collector connection. PCB is vertical without blown air. 2 Rev. 2, Mar-04
Power Semiconductors
IGP03N120H2, IGW03N120H2
Switching Characteristic, Inductive Load, at Tj=25 C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy td(on) tr td(off) tf Eon Eoff Ets T j = 25 C, V C C = 8 00V, I C = 3A , V G E = 1 5V/ 0 V, R G = 8 2 , L 2 ) = 180nH, C 2 ) = 4 0 pF Energy losses include "tail" and diode 3) reverse recovery. Symbol Conditions
IGB03N120H2
Value min. typ. 9.2 5.2 281 29 0.14 0.15 0.29 max. -
Unit
ns
mJ
Switching Characteristic, Inductive Load, at Tj=150 C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy td(on) tr td(off) tf Eon Eoff Ets T j = 15 0 C V C C = 8 00V, I C = 3A , V G E = 1 5V/ 0 V, R G = 8 2 , L 2 ) = 180nH, C 2 ) = 4 0 pF Energy losses include "tail" and diode 3) reverse recovery. 9.4 6.7 340 63 0.22 0.26 0.48 mJ ns Symbol Conditions Value min. typ. max. Unit
Switching Energy ZVT, Inductive Load Parameter IGBT Characteristic Turn-off energy Eoff V C C = 8 00V, I C = 3A , V G E = 1 5V/ 0 V, R G = 8 2 , C r 2 ) = 4 nF T j = 25 C T j = 15 0 C 0.05 0.09 mJ Symbol Conditions Value min. typ. max. Unit
2) 3)
Leakage inductance L and stray capacity C due to dynamic test circuit in figure E Commutation diode from device IKP03N120H2 3 Rev. 2, Mar-04
Power Semiconductors
IGP03N120H2, IGW03N120H2
IGB03N120H2
12A
Ic
10A
t p =1s
10A
5s
IC, COLLECTOR CURRENT
IC, COLLECTOR CURRENT
8A TC=80C 6A TC=110C 4A
10s 1A 50s 100s 0,1A 500s DC
2A
Ic
100Hz 1kHz 10kHz 100kHz
0A 10Hz
,01A
1V
10V
100V
1000V
f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency (Tj 150C, D = 0.5, VCE = 800V, VGE = +15V/0V, RG = 82)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25C, Tj 150C)
12A
60W
10A
50W
IC, COLLECTOR CURRENT
50C 75C 100C 125C
POWER DISSIPATION
40W
8A
30W
6A
20W
4A
Ptot,
10W
2A
0W 25C
0A 25C
50C
75C
100C
125C
150C
TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj 150C)
TC, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (VGE 15V, Tj 150C)
Power Semiconductors
4
Rev. 2, Mar-04
IGP03N120H2, IGW03N120H2
10A 10A 9A 8A 8A VGE=15V 6A 12V 10V 8V 6V
IGB03N120H2
IC, COLLECTOR CURRENT
IC, COLLECTOR CURRENT
7A 6A 5A 4A 3A 2A 1A
VGE=15V 12V 10V 8V 6V
4A
2A
0A 0V
1V
2V
3V
4V
5V
0A 0V
1V
2V
3V
4V
5V
VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristics (Tj = 25C)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 6. Typical output characteristics (Tj = 150C)
VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE
12A
3V
10A
IC=6A IC=3A
IC, COLLECTOR CURRENT
8A
Tj=+150C Tj=+25C
2V
6A
IC=1.5A
4A
1V
2A
0A 3V
5V
7V
9V
0V -50C
0C
50C
100C
150C
VGE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristics (VCE = 20V)
Tj, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 15V)
Power Semiconductors
5
Rev. 2, Mar-04
IGP03N120H2, IGW03N120H2
1000ns
IGB03N120H2
1000ns td(off)
td(off)
t, SWITCHING TIMES
tf
t, SWITCHING TIMES
100ns
100ns tf
10ns
td(on)
10ns
td(on)
tr 1ns 0A 2A 4A
tr 1ns 0 50 100 150
IC, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, Tj = 150C, VCE = 800V, VGE = +15V/0V, RG = 82, dynamic test circuit in Fig.E)
RG, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, Tj = 150C, VCE = 800V, VGE = +15V/0V, IC = 3A, dynamic test circuit in Fig.E)
1000ns td(off)
5V
VGE(th), GATE-EMITTER THRESHOLD VOLTAGE
4V
t, SWITCHING TIMES
100ns tf
3V
max. typ.
10ns
td(on)
2V min. 1V
tr
1ns 25C
50C
75C
100C
125C
150C
0V -50C
0C
50C
100C
150C
Tj, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE = 800V, VGE = +15V/0V, IC = 3A, RG = 82, dynamic test circuit in Fig.E)
Tj, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 0.09mA)
Power Semiconductors
6
Rev. 2, Mar-04
IGP03N120H2, IGW03N120H2
IGB03N120H2
1.0mJ
1
1
) Eon and Ets include losses due to diode recovery.
Ets
1
0.7mJ
) Eon and Ets include losses due to diode recovery.
Ets
1
E, SWITCHING ENERGY LOSSES
E, SWITCHING ENERGY LOSSES
0.6mJ
0.5mJ
0.5mJ
Eoff
0.4mJ
Eon
1
0.3mJ
Eoff Eon
1
0.2mJ
0.0mJ 0A 2A 4A
0
50
100
150
200
250
IC, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, Tj = 150C, VCE = 800V, VGE = +15V/0V, RG = 82, dynamic test circuit in Fig.E )
RG, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, Tj = 150C, VCE = 800V, VGE = +15V/0V, IC = 3A, dynamic test circuit in Fig.E )
1
) Eon and Ets include losses due to diode recovery.
Eoff, TURN OFF SWITCHING ENERGY LOSS
0.5mJ
Ets
1
0.16mJ
IC=3A, TJ=150C
E, SWITCHING ENERGY LOSSES
0.4mJ
0.12mJ
0.3mJ Eoff 0.2mJ Eon
1
0.08mJ IC=1A, TJ=150C 0.04mJ IC=1A, TJ=25C 0.00mJ 0V/us
IC=3A, TJ=25C
0.1mJ
25C
80C
125C
150C
1000V/us
2000V/us
3000V/us
Tj, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE = 800V, VGE = +15V/0V, IC = 3A, RG = 82, dynamic test circuit in Fig.E )
dv/dt, VOLTAGE SLOPE Figure 16. Typical turn off switching energy loss for soft switching (dynamic test circuit in Fig. E)
Power Semiconductors
7
Rev. 2, Mar-04
IGP03N120H2, IGW03N120H2
IGB03N120H2
20V
D=0.5
10 K/W
0
VGE, GATE-EMITTER VOLTAGE
VGE, GATE-EMITTER VOLTAGE
0.2 0.1
-1
15V
UCE=240V
0.05 0.02 0.01
10 K/W
R,(K/W) 1.082517 0.328671 0.588811
R1
0.000795 0.000179 0.004631
R2
, (s)
10V
UCE=960V
5V
10 K/W single pulse 1s 10s
C 1 = 1 /R 1 C 2 = 2 /R 2
-2
100s
1ms
10ms
100ms
0V 0nC
10nC
20nC
30nC
QGE, GATE CHARGE Figure 17. Typical gate charge (IC = 3A)
1nF
QGE, GATE CHARGE Figure 17. Typical gate charge (IC = 3A)
1000V 3A
VCE, COLLECTOR-EMITTER VOLTAGE
Ciss
800V
C, CAPACITANCE
100pF
600V
2A
400V 1A 200V
Coss
10pF
Crss 10V 20V 30V
0V
0A 0.0 0.2 0.4 0.6 0.8 1.0 1.2
0V
VCE, COLLECTOR-EMITTER VOLTAGE Figure 18. Typical capacitance as a function of collector-emitter voltage (VGE = 0V, f = 1MHz)
tp, PULSE WIDTH Figure 20. Typical turn off behavior, hard switching (VGE=15/0V, RG=82, Tj = 150C, Dynamic test circuit in Figure E)
Power Semiconductors
8
Rev. 2, Mar-04
ICE COLLECTOR CURRENT
IGP03N120H2, IGW03N120H2
IGB03N120H2
800V
3A
VGE, GATE-EMITTER VOLTAGE
600V
2A
400V
1A
200V 0A 0V 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8
tp, PULSE WIDTH Figure 21. Typical turn off behavior, soft switching (VGE=15/0V, RG=82, Tj = 150C, Dynamic test circuit in Figure E)
ICE COLLECTOR CURRENT 9
Power Semiconductors
Rev. 2, Mar-04
IGP03N120H2, IGW03N120H2
TO-220AB
symbol
IGB03N120H2
dimensions
[mm] min max 10.30 15.95 0.86 3.89 3.00 6.80 14.00 4.75 0.65 1.32 min
[inch] max 0.4055 0.6280 0.0339 0.1531 0.1181 0.2677 0.5512 0.1870 0.0256 0.0520
A B C D E F G H K L M N P T
9.70 14.88 0.65 3.55 2.60 6.00 13.00 4.35 0.38 0.95
0.3819 0.5858 0.0256 0.1398 0.1024 0.2362 0.5118 0.1713 0.0150 0.0374
2.54 typ. 4.30 1.17 2.30 4.50 1.40 2.72
0.1 typ. 0.1693 0.0461 0.0906 0.1772 0.0551 0.1071
TO-263AB (D2Pak)
symbol
dimensions
[mm] min max 10.20 1.30 1.60 1.07 0.85 4.50 1.37 9.45 2.50 0.20 5.20 3.00 0.60 10.80 1.15 6.23 4.60 9.40 16.15 min 9.80 0.70 1.00 1.03 0.65 4.30 1.17 9.05 2.30 0.00 4.20 2.40 0.40
[inch] max 0.4016 0.0512 0.0630 0.0421 0.0335 0.1772 0.0539 0.3720 0.0984 0.0079 0.2047 0.1181 0.0236 0.3858 0.0276 0.0394 0.0406 0.0256 0.1693 0.0461 0.3563 0.0906 0.0000 0.1654 0.0945 0.0157
A B C D E F G H K L M N P Q R S T U V W X Y Z
2.54 typ. 5.08 typ.
0.1 typ. 0.2 typ.
15 typ.
0.5906 typ.
8 max
8 max
0.4252 0.0453 0.2453 0.1811 0.3701 0.6358
Power Semiconductors
10
Rev. 2, Mar-04
IGP03N120H2, IGW03N120H2
TO-247AC
symbol
IGB03N120H2
dimensions
[mm] min
symbol
min A B C D 1.73 4.78 2.29 1.78 1.09 E F G H K L M N
P
A B C D E F G H K L M N
P
4.78 2.29 1.78 1.09
A B C D
2.67 0.76 max 20.80 15.65 5.21 19.81 3.560 3.61 6.12
dimensi ons
2.67 0.76 max 20.80 15.65 5.21 19.81 3.560 3.61 6.12
dimensi ons
F G H K L M N
P
Q
Q
Q
symbol
[mm] min
symbol
[mm] min
symbol
Power Semiconductors
11
Rev. 2, Mar-04
IGP03N120H2, IGW03N120H2
i,v diF /dt
IGB03N120H2
tr r =tS +tF Qr r =QS +QF tr r
IF
tS QS
tF 10% Ir r m t VR
Ir r m
QF
dir r /dt 90% Ir r m
Figure C. Definition of diodes switching characteristics
1
Tj (t) p(t)
r1
r2
2
n
rn
r1
r2
rn
Figure A. Definition of switching times
TC
Figure D. Thermal equivalent circuit
1/2 L oo DUT (Diode) VDC RG DUT (IGBT) L C Cr
1/2 L
Figure E. Dynamic test circuit Leakage inductance L = 180nH, Stray capacitor C = 40pF, Relief capacitor Cr = 4nF (only for ZVT switching)
Figure B. Definition of switching losses
Power Semiconductors
12
Rev. 2, Mar-04
IGP03N120H2, IGW03N120H2
Published by Infineon Technologies AG i Gr., Bereich Kommunikation St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 1999 All Rights Reserved. Attention please!
IGB03N120H2
The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Power Semiconductors
13
Rev. 2, Mar-04

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